Method for preparing nanometer structures from top to bottom on surfaces of (110) type silicon chips

A nanostructure and silicon wafer surface technology, which is applied in nanostructure manufacturing, nanotechnology, nanotechnology, etc., can solve the problems of single nanowire structure, high preparation cost, and expensive SOI silicon wafer material, etc., and achieve lattice structure Integrity, good crystal direction alignment and low cost effect
CN102398893AInactive Publication Date: 2012-04-04SHANGHAI INST OF MICROSYSTEM & INFORMATION TECH CHINESE ACAD OF SCI
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Patent Information

Authority / Receiving Office
CN Β· China
Current Assignee / Owner
SHANGHAI INST OF MICROSYSTEM & INFORMATION TECH CHINESE ACAD OF SCI
Publication Date
2012-04-04
Estimated Expiration
Not applicable Β· inactive patent

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Abstract

The invention relates to a method for preparing nanometer structures from top to bottom on the surfaces of (110) type silicon chips, which belongs to the technical field of nanometer and is characterized in that the anisotropy wet process corrosion characteristics of silicon materials are used for preparing monocrystalline silicon nanometer wall structures or nanometer corner structures with the characteristic dimension being nanometer level on the surfaces of the (110) silicon chips, or a self limitation oxidation process is combined for further preparing the monocrystalline silicon nanometer line structure with the cross section in a reverse triangular shape. The method has the advantages that the process is simple, only the conventional photoetching and the anisotropy wet process corrosion masking manufacture, corrosion and etching processes are adopted, the large-scale manufacture can be realized, and the method belongs to a convenient micro nanometer integrating process technology. The nanometer structure manufactured in the invention can be used for studying the structure properties of the low-dimension monocrystalline silicon materials, including the study of the mechanical property, the thermal property, the electric property and the like, can also be used as sensor function structure components and has the application prospects.
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Description

technical field

[0001] The invention relates to a method for preparing single crystal silicon nanostructures from top to bottom, more precisely to a method for preparing nanostructures from top to bottom on the surface of a (110) type silicon chip, and belongs to the field of nanotechnology. Background technique

[0002] With the development of nanoscience and technology, the nanostructure of materials has been paid more and more attention by researchers because they often show different characteristics from their macroscopic states. Research, so as to better understand various effects at the nanoscale, achieve a deeper understanding of the relationship between the microstructure of materials and their properties, and thus design and manufacture application devices with better performance.

[0003] At present, there are two types of methods for preparing nanowires, the first is the bottom-up method (bottom-up) (Xia Y., Yang P., Sun Y., W, Y., Mayers B., Gates B. , Yin Y., K...

Claims

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