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113 results about "Photo ablation" patented technology

System for MRI-guided interventional mammary procedures

The combination of contrast enhanced magnetic resonance imaging (MRI) and MR-guided subcutaneous core biopsy can be used as a robust approach for the diagnosis and treatment of breast cancer. MRI provides the means to accurately position and monitor interventional procedures such as biopsy, removal of tissue or other transcanular procedures. MRI may also be used in this invention to position and monitor the progress of breast conserving therapies (BCT), such as laser photo-ablation, cryoablation and localized hyperthermia. The general practice of this invention is to provide a remotely controlled apparatus for MR-guided interventional procedures in the breast. The apparatus allows the practice of a method that provides flexibility in conditioning the breast, i.e. orientation and degree of compression, and in setting the trajectory of the intervention. To that end, a robust conditioning/positioning device, fitted with the appropriate degrees of freedom, enhances the efficacy and efficiency of breast interventions by providing the flexibility in planning and executing an appropriate procedure strategy that better suits interventional procedures, either those in current use or yet to be developed. The novelty and potential commercial success of the device originates from its high maneuverability to set and perform the procedure strategy and its adaptability to accommodate an array of interventional probes. Remote control of this device can allow planning the operation and performing the relevant tasks in a short period, for example, within the contrast window provided by a single injection of a contrast agent, and this feature can be operator-independent.
Owner:RGT UNIV OF MINNESOTA

Method for manufacturing electrochromic devices

This invention contemplates the use of laser patterning/scribing in electrochromic device manufacture, anywhere during the manufacturing process as deemed appropriate and necessary for electrochromic device manufacturability, yield and functionality, while integrating the laser scribing so as to ensure the active layers of the device are protected to ensure long term reliability. It is envisaged that the laser is used to pattern the component layers of electrochromic devices by directly removing (ablating) the material of the component layers. The invention includes a manufacturing method for an electrochromic device comprising one or more focused laser patterning steps. To minimize redeposition of laser ablated material and particulate formation on device surfaces a number of approaches may be used: (1) ablated material generated by the focused laser patterning may be removed by vacuum suction and/or application of an inert gas jet in the vicinity of the laser ablation of device material; (2) spatial separation of the edges of layers and patterning of lower layers prior to deposition of upper layers; and (3) the laser patterning step may be performed by a laser beam focused directly on the deposited layers from above, by a laser beam directed through the transparent substrate, or by a combination of both.
Owner:APPLIED MATERIALS INC

Method for manufacturing electrochromic devices

This invention contemplates the use of laser patterning / scribing in electrochromic device manufacture, anywhere during the manufacturing process as deemed appropriate and necessary for electrochromic device manufacturability, yield and functionality, while integrating the laser scribing so as to ensure the active layers of the device are protected to ensure long term reliability. It is envisaged that the laser is used to pattern the component layers of electrochromic devices by directly removing (ablating) the material of the component layers. The invention includes a manufacturing method for an electrochromic device comprising one or more focused laser patterning steps. To minimize redeposition of laser ablated material and particulate formation on device surfaces a number of approaches may be used: (1) ablated material generated by the focused laser patterning may be removed by vacuum suction and / or application of an inert gas jet in the vicinity of the laser ablation of device material; (2) spatial separation of the edges of layers and patterning of lower layers prior to deposition of upper layers; and (3) the laser patterning step may be performed by a laser beam focused directly on the deposited layers from above, by a laser beam directed through the transparent substrate, or by a combination of both.
Owner:APPLIED MATERIALS INC

Method of direct Coulomb explosion in laser ablation of semiconductor structures

A new technique and Method of Direct Coulomb Explosion in Laser Ablation of Semiconductor Structures in semiconductor materials is disclosed. The Method of Direct Coulomb Explosion in Laser Ablation of Semiconductor Structures provides activation of the “Coulomb explosion” mechanism in a manner which does not invoke or require the conventional avalanche photoionization mechanism, but rather utilizes direct interband absorption to generate the Coulomb explosion threshold charge densities. This approach minimizes the laser intensity necessary for material removal and provides optimal machining quality. The technique generally comprises use of a femtosecond pulsed laser to rapidly evacuate electrons from a near surface region of a semiconductor or dielectric structure, and wherein the wavelength of the laser beam is chosen such that interband optical absorption dominates the carrier production throughout the laser pulse. The further application of a strong electric field to the semiconductor or dielectric structure provides enhancement of the absorption coefficient through a field induced redshift of the optical absorption. The use of this electric field controlled optical absorption is available in all semiconductor materials and allows precise control of the ablation rate. When used in conjunction with nanoscale semiconductor or dielectric structures, the application of a strong electric field provides for laser ablation on sub-micron lateral scales.
Owner:OPTICAL ANALYTICS

Molybdenum dioxide nano photothermal conversion material and preparation method and application thereof

The invention discloses a molybdenum dioxide nano photothermal conversion material and a preparation method and application thereof. A high activity solvothermal precursor is obtained by laser ablation of high pure molybdenum in a mixed solution by combination of a liquid phase laser ablation technique and a solvothermal method; and molybdenum dioxide nano nanoparticles are synthesized by reaction under mild conditions by the solvothermal method. The prepared molybdenum dioxide nano nanoparticles have surface plasmon resonance properties, can produce strong light absorption in a near infrared band, can be used for effective conversion of absorbed light into heat so as to kill cancer cells under near infrared laser irradiation, have excellent photothermal stability and biological compatibility, and can be used for the preparation of a photothermal treatment reagent, the photothermal treatment reagent comprising the molybdenum dioxide nano photothermal conversion material is injected into a tumor site, tumor is irradiated by near infrared laser, the growth of the tumor can be effectively inhibited, and the molybdenum dioxide nano photothermal conversion material has wide application prospect in the field of tumor photothermal therapy.
Owner:NANJING UNIV OF SCI & TECH

Solid sample direct introduction device of microwave plasma torch spectrometer

The invention provides a solid sample direct introduction device of a microwave plasma torch spectrometer. The solid sample direct introduction device mainly includes pulsed laser system, an imaging positioning system, a sample processing system, a position regulating system and an air path switching system. Through the adoption of the solid sample direct introduction device disclosed by the invention, the direct sampling analysis of solid samples comprising biological samples, metallic materials and the like can be realized, besides, the device is suitable for sampling regular sample surfaces and irregular sample surfaces, direct laser ablation sampling can atomize all the elements, and the device can be used for full elementary analysis of the microwave plasma torch spectrometer. The device can be applied to many existing fields of metallurgy, medical inspection, life science, agriculture, food safety detection, forestry, environmental monitoring, biological identification, medicolegal expertise and the like. The device disclosed by the invention is reasonable in design, and can be used for direct sample introduction for the solid samples, the pretreatment steps of the samples are decreased, requirements for the material state of the samples are lower, and the device satisfies user demands.
Owner:ZHEJIANG UNIV

Method for preparing multi-scale nano-composite structure through laser cleaning assisted laser ablation

The invention provides a method for preparing a multi-scale nano-composite structure through laser cleaning assisted laser ablation. The method comprises the steps of establishing a light path, wherein a femtosecond laser outputs light, the light passes through reflecting mirrors to go into a scanning galvanometer, is focused through a circular lens of the scanning galvanometer and then is irradiated on an objective stage, and the femtosecond laser and the scanning galvanometer are connected with a computer; setting laser ablation parameters of a silicon material and fixing a monocrystalline silicon wafer sample to the mobile objective stage; controlling the scanning galvanometer through the computer to move a laser spot crossed grid, and carrying out laser ablation on the surface of the monocrystalline silicon wafer sample to obtain the surface covered with a layer of flocculent oxide deposited grid nanostructure; replacing the circular lens of the scanning galvanometer with a cylindrical lens to obtain an elliptical light spot; and setting laser cleaning parameters of silicon oxide deposition, controlling the scanning galvanometer to move the laser spot grid, and carrying out laser cleaning on the surface of the latticed nanostructure to obtain the multi-scale nano-composite structure. The method provided by the invention is simple in operation, environment-friendly, economical and efficient.
Owner:XI AN JIAOTONG UNIV

Method for calculating temperature field of laser ablation carbon fiber target material

The invention discloses a method for calculating a temperature field of a laser ablation carbon fiber target material, and relates to the field of laser damage effect research, and the method comprises the following steps: 1, carrying out the equal-thickness layering according to the shape of the carbon fiber target material, and dividing grid units; 2, setting the laser action time t to be equalto 0, setting a time interval delta t, and applying an initial condition and a boundary condition to the unit according to the thermophysical parameters of the carbon fiber target material; 3, settingt= t + delta t, solving three-dimensional heat conduction transient equations of anisotropic materials of all units, and calculating a target material temperature field after time t; 4, if a grid unit with the temperature exceeding the vaporization threshold temperature of the carbon fiber target exists, vaporizing the unit according to a meta-order stripping method, loading the corresponding boundary condition to the next layer of unit, and then executing the step 5; 5, traversing the grid units: judging whether a next layer of unit exists, if yes, adjusting the thermophysical parameters ofthe target material, updating the boundary condition and the initial condition, and then executing the step 3; otherwise, determining a fact that the time and the temperature field are the characteristic parameters of the laser damaged carbon fiber target material.
Owner:UNIV OF ELECTRONICS SCI & TECH OF CHINA

Preparation method of high-purity nano-structure ZnGa2O4 for deep ultraviolet extremely week light detection

ActiveCN107758726ANon-equilibriumHigh-purity nanostructureGallium/indium/thallium compoundsNanotechnologyLiquid mediumLow voltage
The invention discloses a preparation method of high-purity nano-structure ZnGa2O4 for deep ultraviolet extremely week light detection. The ZnGa2O4 has the band-gap width of 4.4 to 4.7 eV, has excellent thermal and chemical stability and high electronic migration rate, can bear high-current impact and can be applied to a deep ultraviolet photoelectric detector, a light-emitting diode and low-voltage light emission. A high-activity solvent hot precursor is obtained by a liquid phase laser ablation and solvent thermal method combined mode and by performing laser ablation on high-purity zinc target and gallium oxide target in a liquid medium, and the high-purity nano-structure ZnGa2O4 is synthesized by a solvothermal method. compared with the existing preparation method of the ZnGa2O4 nanometer material, the method provided by the invention has the advantages of high-purity product, single-phase structure, high crystallinity, uniform size, controllable shape, simplicity in preparation, mild experimental environment, short reaction time and the like; the prepared ZnGa2O4 nanometer material can be used for being assembled into the deep ultraviolet photoelectric detector and can realizehigh-sensitivity, quick-response and high-pressure-resistant detection on extremely weak light.
Owner:NANJING UNIV OF SCI & TECH

Ultrafast continuous three-dimensional imaging system and method for ultrashort pulse laser ablated object

ActiveCN112894149AEnhanced Continuous ObservabilityUsing optical meansElectromagnetic wave reradiationBeam splittingPicosecond
The invention relates to an ultrafast continuous three-dimensional imaging system and method for an ultrashort pulse laser ablated object, and belongs to the field of ultrafast imaging. According to the invention, the acquisition and restoration of three-dimensional contour information of an object surface with ultrahigh time resolution can be realized. The system specifically comprises an ultrashort pulse laser light source, a super-continuum spectrum generator, a pulse separation delayer, a multi-frequency pulse interference fringe generator, a polarizer, a time delay platform, a sample, an image acquisition device, a computer, a beam splitting-beam combining mirror, a reflecting mirror, and an image three-dimensional contour extraction method. According to the invention, ultrafast continuous three-dimensional observation in the process of ablating an object material by ultrashort pulse laser can be realized, the time resolution reaches femtosecond-picosecond magnitude, the surface three-dimensional shape of an object in the processing process can be presented, the continuous observability in the experiment process is enhanced, and an important auxiliary effect is provided for the mechanism research of ablating the processed object by the ultrashort pulse laser.
Owner:BEIJING INSTITUTE OF TECHNOLOGYGY

Method for preparing bulk molybdenum disulfide surface Raman-enhanced substrate through femtosecond lasers

The invention relates to a method for preparing a bulk molybdenum disulfide surface Raman-enhanced substrate through femtosecond lasers, and belongs to the field of application of functional surfaces.According to the method, bulk molybdenum disulfide which is cheap and easy to obtain is used as a sample, so that it is ensured that the lasers can perpendicularly enter the surface of the horizontally-placed sample; a laser device is set to a single-pulse trigger mode; a laser ablation area can be adjusted by adjusting the focal length of a plano-convex lens; and the shape of the laser ablationarea can be achieved by adjusting the angle between the sample and the incident lasers. According to the method, a micro-nano composite structure is ablated on the surface of the bulk molybdenum disulfide by means of the non-equilibrium characteristic of femtosecond laser processing, the material property of the molybdenum disulfide is modified, and thus, the molybdenum disulfide can be used as anefficient surface Raman-enhanced substrate. The method has the advantages that the preparation process is simple and rapid, the sample is cheap and easy to obtain, and the performance is stable and efficient; and an economical, simple, controllable and efficient preparation method is provided for preparing the surface Raman-enhanced substrate, and industrialization is facilitated.
Owner:BEIJING INSTITUTE OF TECHNOLOGYGY

Manufacturing process of printed circuit board with steps and printed circuit board

The invention discloses a manufacturing process of a printed circuit board with a step, which comprises the following steps: external light imaging: manufacturing a circuit pattern on a copper-clad plate in a dry film pasting mode, designing a dry film removal effect at the step position, and exposing copper on the side wall and the bottom of the step; electroplating copper and tin: sequentially electroplating a copper layer and a tin layer on the circuit pattern area on the copper-clad plate; step bottom laser tin burning: exposing the electrocoppering layer at the bottom of the step by meansof laser ablation of the tin layer; etching: after the dry film on the copper-clad plate is removed, etching off the exposed copper layer on the copper-clad plate to obtain the copper-clad plate of which the circuit pattern is covered by the tin layer; and tin removing: removing the tin layer on the copper-clad plate to obtain the printed circuit board with the outer layer circuit. According to the technological method, the technological process is shortened, and the manufacturing speed is increased. The invention further discloses a printed circuit board manufactured by adopting the manufacturing process. The printed circuit board is provided with a step mechanism.
Owner:珠海杰赛科技有限公司 +1
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