75 results about "Photo ablation" patented technology

The application discloses IC chip laser ablation printing equipment and relates to the field of chip letter removing processing. The equipment comprises a top base, the bottom of the top base is installed at the top of a receiving box, and a vibrating disc feeding module is sequentially installed at the top of the top base from left to right. The equipment further comprises a material taking manipulator, a laser ablation module, a cleaning module, an ink jet module, a drying module and a double-track moving and carrying module. The laser ablation module is used for laser ablation operation on the chip, thereby assisting in laser ablation cleaning of the letters on the surface of the chip. The cleaning module is used for assisting in cleaning of the particulate matter generated by ablation on the surface of the chip. The laser ablation replaces manual polishing or chemical corrosion to remove the letters, the uniformity of the letter removal is ensured through the precisely controllable light spot energy distribution of the laser, the laser letter removal is non-contact, the chip is not mechanically damaged, the laser letter removal has become a mainstream selection due to high precision and stability, the self-defined ablation depth can be realized, and no additional damage is caused to the IC chip.

The invention provides a multi-energy-field auxiliary laser drilling method and device for a silicon carbide micropore with the large depth-diameter ratio, and relates to the technical field of hard and brittle material precision machining.The multi-energy-field auxiliary laser drilling method for the silicon carbide micropore with the large depth-diameter ratio comprises the following steps that a silicon carbide workpiece is ablated layer by layer through an ultrafast laser beam to form the micropore; and in the layer-by-layer ablation process, the workpiece or the ultrafast laser beam generates relative high-frequency micro-amplitude ultrasonic vibration in the axial direction of the micropore, and the low-temperature high-speed air flow is coaxially guided to an ablation point of the ultrafast laser beam so as to remove ablation products and cool the ablation point and the adjacent area of the ablation point. Through organic combination and synergistic effect of ultrafast laser ablation, ultrasonic vibration in the axial direction of a drill hole and coaxial low-temperature high-speed airflow, the problems that in the prior art, due to unsmooth chip removal of ablation products and the remarkable heat effect, the machining depth is limited, the hole wall quality is poor, and the machining efficiency is low are solved.

Described herein is a robotic laser ablation system that comprises a robot and processing circuitry. The robot has an end effector with laser componentry and a camera mounted thereto. Processing circuitry is configured, in response to stored instructions, to perform operations including: receiving the input image of a workpiece from the camera; segmenting the input image to produce an image segment that depicts at least a portion of the workpiece; applying a surface-fitting algorithm to generate a polynomial surface that is fit to the surface in the image segment; computing a set of surface normal vectors across the polynomial surface to generate a set of waypoints offset from the polynomial surface by an offset length; programmatically generating a motion path linking a plurality of the waypoints; and performing laser ablation of the surface of the portion of the workpiece based on the motion path.

The application discloses a device and a process for laser ablation induced controllable damage assisted grinding of hard and brittle materials, which adopts laser irradiation on the material surface, focuses the laser focal point on the material surface to be processed, removes and induces specific depth damage to the material by ablation. By controlling the laser power, scanning speed and ablation track, the degree and type of laser ablation induced thermal damage of the material are effectively controlled. The grinding path of the grinding wheel and the ablation path of the laser are controlled on the same axis, and the distance between the laser ablation and the grinding wheel grinding is set, and the workpiece ablation surface is ground under the preferred grinding parameters. The application systematically puts forward a quantitative control strategy for the degree of laser ablation damage of the material surface, removes the laser induced damage layer by accurate control of the material surface damage and precision grinding, and realizes high-efficiency and high-quality processing of the hard and brittle materials.

Methods and systems for processing battery electrodes are disclosed. A system for processing battery electrodes includes a first measurement device for measuring one or more parameters of a target region of a battery electrode; a pulsed laser system for removing a portion of the target region of a sample of material comprising battery electrodes based one or more measured parameters as measured by the first measurement device; a control system for controlling the removing that is in communication with the first measurement device and the laser system; and a debris collection device for removing debris from the target region.

The invention discloses an electroplating solution for electroplating beryllium by using an organic solvent and a preparation method of a beryllium metal ribbon, and belongs to the technical field of metal manufacturing, the electroplating solution comprises the following raw materials: the organic solvent, a beryllium source, a reducing agent and a complexing agent; wherein the concentration of the beryllium source is 0.5 to 3 mol / L; the concentration of the reducing agent is 50-100g / L; the concentration of the complexing agent is 40-90 g / L. The invention also provides a preparation method of the beryllium metal thin strip, which comprises the following steps: by taking an aluminum plate as a cathode and a beryllium plate as an anode, electroplating a beryllium coating on the aluminum plate by using the electroplating solution; and removing the aluminum plate and the beryllium coating on one surface of the aluminum plate by laser ablation to obtain the beryllium metal thin strip. According to the method, the technical problem that the low-thickness beryllium metal thin strip cannot be obtained through a rolling technology is solved, beryllium resource waste and organic waste emission are remarkably reduced, and obvious environmental friendliness is achieved.

The present invention discloses a numerical simulation method for laser-induced phase explosion based on the finite element method, which relates to the technical field of high-power laser and material interaction. Laser parameters are preset to establish a numerical simulation model for nanosecond laser ablation of metals. Laser energy is used as a heat source term to generate a two-dimensional numerical grid for the calculation domain of metal ablation. Phase change heat transfer theory is used to consider the metal's phase change, phase interface movement, and particle evaporation backscattering effects to simulate the physical process and obtain the saturated vapor pressure, hot liquid pressure, and material surface temperature. Based on these saturated vapor pressure, hot liquid pressure, and material surface temperature, the numerical simulation model is discretized and solved using the finite element method. Particle tracking is used to simulate the gas-liquid phase splashing process at the moment of explosion. The present invention can accurately predict the dynamic evolution characteristics of phase explosions during laser ablation, providing important theoretical support and technical assurance for fields such as laser processing, laser propulsion, and laser micro-nano processing.

The application relates to the technical field of isotope detection, in particular to an isotope abundance and ratio detection device and method based on molecular emission spectrum. The device comprises a computer and a long-pulse laser unit, an optical path transmission unit, an LED illumination focusing unit, a three-dimensional displacement table and a spectrometer connected with the computer. The existing viewpoint considers that long-pulse laser is not conducive to micro-area excitation and high-resolution spectrum acquisition due to its wide pulse width, and is less applied in isotope subtle spectral line difference identification. The application breaks through the molecular emission cascade mechanism, enhances the signal intensity, realizes the possibility of micro-area high-resolution isotope molecular detection, generates plasma by in-situ laser ablation, induces molecular emission spectrum, realizes rapid, accurate and real-time in-situ detection of the isotope abundance and ratio in the sample. The device has few optical elements, simple structure and convenient optical path adjustment, and is conducive to miniaturization and on-site application promotion.

We provide a laser ablation system equipped with a robot and processing circuitry. [Solution] The robot has an end effector having a laser component and a camera. The circuit receives an input image of a workpiece from the camera in response to a memory command, segments the image to generate image segments that depict the workpiece, applies a surface fitting algorithm to generate a polynomial surface that fits the inner surface of the segments, calculates a set of surface normal vectors crossing the surface to generate a set of waypoints offset from the polynomial surface, programs a motion path connecting the multiple waypoints, and performs operations including laser ablation of the workpiece surface based on the motion path.

The invention discloses a PCB (printed circuit board) circuit laser ablation method. The PCB circuit laser ablation method comprises the following steps: drilling holes in a copper-clad plate; carrying out full-board electroplating on the drilled copper-clad plate, and forming an electroplating copper layer on the surface of the copper foil and the hole wall; forming a tin protection layer on the surface of the electroplating copper layer; ablating the tin protection layer by adopting laser to remove the tin protection layer in a non-circuit pattern area in the PCB design, and at least partially exposing the electroplating copper layer below the tin protection layer; etching the exposed copper layer to expose the dielectric layer; and removing the residual tin protection layer to form a PCB circuit pattern. The indispensable photosensitive dry film in the traditional negative film and positive film process and matched film pasting, exposure and development procedures are abandoned. Therefore, not only is the material cost generated by using the dry film directly eliminated, but also hidden quality dangers such as open circuit and short circuit of a circuit caused by damage of the dry film in the processing process are avoided, so that the product yield is remarkably improved.

The invention provides an anti-reflection light trapping film deposited through a laser ablation method and application of the anti-reflection light trapping film. The preparation method of the anti-reflection light trapping film comprises the following steps: ablating the surface of an inorganic material target by laser to form a plasma plume, depositing generated particles on a surrounding solar cell and an LED, and forming a layer of anti-reflection light trapping film on the surface of the solar cell and the LED. The anti-reflection film not only can be used on the front and back surfaces of a battery and an LED, but also can be used on the front and back surfaces of a device. The target material can be carbon and silicon nonmetal, and can also be aluminum, nickel, titanium, vanadium, molybdenum, cobalt, iron, zinc, magnesium, chromium, indium, tin, bismuth, copper, niobium, zirconium and alloys containing the elements. The method can be used for deposition in air and can also be used for deposition in a vacuum chamber. The preparation method is low in cost, the anti-reflection light trapping film is prepared on a solar cell and an LED substrate in a deposition mode, and the method has the advantage of being capable of achieving large-scale production. The prepared anti-reflection light trapping film can be used in the photoelectric fields of solar cells, LEDs and the like, and has great economic value.

The application discloses a variable parameter laser ablation effect fast prediction method based on a finite element model and a neural network model, and solves the problems of limited application scenarios, limited application material ranges and insufficient real-time performance in the prior art. The application obtains simulation data (i.e. a second data set) through a laser ablation effect finite element model, trains and tests a neural network model through the simulation data, obtains an optimal neural network model, and then obtains corresponding data of a material to be measured according to actual working conditions, sets a calculation time step and a laser irradiation time, combines the optimal neural network model, and realizes real-time prediction of the laser ablation effect, so that the calculation precision is high, the time consumption is short, and the method is suitable for fast prediction of the laser ablation effect in a strong dynamic scene.

This invention discloses a method for separating semiconductor wafers, comprising a scribing step: using a scribing tool to scribble lines on the surface of the semiconductor wafer to form separation channels; and a laser ablation step: controlling a laser beam to irradiate the separation channels and move along the separation channels until the semiconductor wafer is separated along the separation channels. This method can reduce the deformation generated during semiconductor separation, reduce the risk of semiconductor chipping and cracking, and improve product yield.

The invention provides a method for preparing a transparent antimony-based chalcogenide film and a photoelectric detector through selective deposition. The transparent photoelectric detector structure provided by the invention comprises a transparent glass substrate, a patterned substrate, a light absorption layer, a wide-band-gap oxide covering layer and a transparent conductive electrode. The transparent light absorption layer is an antimony-based chalcogenide film and is selectively deposited on the patterned substrate. The antimony-based chalcogenide film has different growth orientations and adhesion coefficients on different substrates, and regional selective deposition of the antimony-based chalcogenide film on the patterned substrate can be realized by regulating and controlling the temperature of the substrate. The method provided by the invention breaks through the limitation of the existing transparent photoelectric detector material, and avoids the pattern edge interface damage caused by the traditional patterning methods, such as a stripping method, an etching method and a laser ablation process. The prepared transparent photoelectric detector has the advantages of being simple in preparation, accurate in transparency regulation and control, wide in spectral response in the range of 405-980 nm and the like.

The invention relates to the technical field of chip substrate processing, in particular to chip substrate multi-station laser edge sealing equipment based on a collaborative feeding structure, which comprises a U-shaped conveying table and annular rails positioned on the inner walls of the two sides of the U-shaped conveying table, and a feeding station used for self-checking a chip substrate placing surface and adsorbing and fixing is arranged between the annular rails; the U-shaped conveying table is provided with a horizontal pushing station cooperating with the feeding station to carry out anti-deviation feeding on the stacked chip substrates and an edge sealing station for carrying out turn-over correction and excessive glue removal on the chip substrates. According to the invention, through cooperation of the loading station and the feeding station, anti-deviation loading of the chip substrate is realized, and the placement state is determined according to the distribution difference of excessive glue on the front and back surfaces; and then automatic negative pressure adsorption and clamping fixation are carried out on the correctly placed substrate through the feeding station, so that laser ablation edge sealing is precisely completed, automatic overturning correction is carried out on the wrongly placed substrate and the linkage edge sealing station, and automatic treatment of deviation-preventing feeding, placement state defining, automatic error correction and precise ablation edge sealing is achieved.

A method to refurbish electrostatic chucks includes identifying one or more layers on a minimal contact area (MCA) pad affixed to an electrostatic chuck, configuring a laser ablation system to remove the identified layers, ablating the identified layers with a controlled laser beam from the laser ablation system, identifying one or more deposited metals on the electrostatic chuck, and ablating the identified deposited metals with the laser beam. In another aspect, the MCA pad may include a diamond like carbon layer and a Ti-TiN layer. The laser ablation process removes the layers and deposited metals on an electrostatic chuck in a manner that is performed faster, with a lower cost, and without the use of a multistep chemical process compared to conventional chemical stripping methods.

The application relates to the technical field of diamond processing, in particular to a laser processing method for improving the surface roughness of a diamond, which comprises the following steps: after fixing and arranging a diamond sheet to be processed on a processing table assembly, adjusting a collimating and focusing mirror to be aligned with the surface of the diamond sheet, and preheating the surface of the diamond sheet by using a laser generator; after monitoring that the surface of the diamond sheet reaches a preset temperature, starting an ultrashort pulse laser generator to emit ultrashort pulse laser, and making the ultrashort pulse laser keep a large-interval alternate laser ablation along a preset path by a scanning galvanometer, so that the surface roughness of the diamond sheet reaches a preset value after the vertical alternate ablation along the path. The application can improve the efficient removal of the protruding particles on the surface of the diamond by setting a large-interval scanning path and adopting a four-step scanning method; the method is flexible and fast in operation, the required control system is simple and reliable, and the ablation efficiency of the product is improved.

A laser ablation system including a multi-angle support structure in the form of a carrier which positions multiple nut plates in an axial position along the same incident angle of the laser beam path. Aligning the axis of the nut plate along the radius of the delivered laser beam path minimizes the need for part manipulation during the laser ablation process to achieve similar cleaning results.

The application provides a fused quartz microlens array preparation device and method based on CO2 laser ablation rapid removal and fused quartz microlens array preparation method, and belongs to the field of photochemical processing. In order to solve the problems of high cost, poor thermal stability and difficult to control the machining precision when machining the microlens array of the fused quartz hard and brittle material, and difficult to obtain the low-cost and high-quality microlens array. The coupling model of thermodynamics and fluid mechanics is established, the rough machining structure is simulated to determine the rough machining parameters, the best scanning track is obtained through path planning, the high-power density CO2 laser is used for ablation removal of the fused quartz, and the rapid forming of the microstructure is realized; the low-power density CO2 laser is used for irradiating the microstructure, and the precise fusion polishing is realized. Through the use of a set of CO2 laser for machining the microlens array, the machining cost is reduced, the problem of repeated installation and positioning of the workpiece is avoided, the machining efficiency is further improved, and the high-quality microlens array is prepared with high efficiency and low cost.

A method includes performing a laser ablation process that removes a portion of a wafer to form a trench in a scribe region between adjacent die regions of the wafer, the trench extending from a first side of the wafer toward an opposite second side of the wafer, the trench extending through a metallization structure and an active circuit portion of the wafer, and a bottom of the trench spaced apart from the second side of the wafer. The method also includes performing a wafer expansion process that separates individual semiconductor dies from the wafer after the laser ablation process.

The invention discloses a purple phosphorus / patterned graphene composite multifunctional sensor and a preparation method and application thereof, and relates to the technical field of sensors. The preparation method comprises the following steps: immersing a copper foil sample loaded with graphene into corrosive liquid for etching, and transferring an obtained graphene film to the surface of a substrate after the copper foil is completely removed; processing the graphene film on the substrate by using a laser ablation method, and forming a micron-sized patterned graphene array on the surface of the graphene film; treating the blocky purple phosphorus by adopting a laser liquid phase stripping method to obtain a purple phosphorus nanosheet dispersion liquid; the surface of the patterned graphene array is coated with the obtained purple phosphorus nanosheet dispersion liquid, so that the purple phosphorus nanosheets are compounded with the patterned graphene, and a purple phosphorus / patterned graphene composite sensitive structure is formed; the electrodes are arranged at the two ends of the obtained composite sensitive structure, the purple phosphorus / patterned graphene composite multifunctional sensor is prepared, and high-performance detection of various signals is achieved while the preparation process is kept simple and reliable.

This invention provides a temperature control device for laser ablation-driven micro-impulse measurement experiments, based on a torsion pendulum micro-impulse measurement system. The torsion pendulum micro-impulse measurement system includes a laser, a focusing lens, a displacement stage, a torsion pendulum, a displacement sensor, and a data processing system arranged sequentially. The temperature control device is located in front of the torsion pendulum and fixedly connected to the displacement stage. The temperature control device includes a low-temperature heat sink, an electric heating element, and a temperature control chip, wherein the low-temperature heat sink is shaped to not obstruct the optical path. This solution achieves temperature control of the driven sample in laser ablation-driven impulse measurement experiments without affecting the impulse measurement process of the original torsion pendulum system.

The invention relates to the technical field of isotope detection, in particular to a molecular emission spectrum-based isotope abundance and ratio detection device and a molecular emission spectrum-based isotope abundance and ratio detection method. The device comprises a computer, and a long pulse laser unit, a light path transmission unit, an LED illumination focusing unit, a three-dimensional displacement table and a spectrograph which are connected with the computer. Existing viewpoints consider that long-pulse laser is not beneficial to microcell excitation and high-resolution spectrum acquisition due to wide pulse width, so that the long-pulse laser is less applied to isotope fine spectral line difference identification. According to the invention, the signal intensity is enhanced in a breakthrough manner through a molecular emission cascade mechanism, the possibility of micro-area high-resolution isotope molecule detection is realized, and rapid, accurate and real-time in-situ detection of isotope abundance and ratio in a sample is realized by generating plasma and inducing a molecular emission spectrum through in-situ laser ablation. The device has the advantages of few optical elements, simple structure, convenient optical path adjustment, and facilitation of miniaturization and on-site application and popularization.

The invention discloses a robot laser ablation system and method for curved-surface parts, and belongs to the technical field of laser machining. The robot laser ablation system comprises a six-degree-of-freedom mechanical arm, a laser machining head, a connecting plate, a console, a tool adjusting platform and a laser generator; according to the method, mechanical arm laser ablation device building, transformation matrix obtaining and curved surface part laser ablation are conducted, efficient laser ablation machining can be conducted on curved surface parts, and compared with traditional cutting or grinding, the machining effect of rapidly removing large allowance is achieved; as the laser processing does not need to directly contact with the parts, the parts are simple to mount and position; for machining with the high precision requirement, the method can serve as a rough machining scheme, a CAM program can be automatically converted into a mechanical arm machining file by means of numerical control program conversion software, and the mechanical arm machining instruction compiling difficulty is reduced.

This invention discloses a process for nickel-gold plating to avoid gold seepage, comprising the following steps: S1, back drilling: multilayer circuit boards are configured with through holes according to production requirements. Back drill holes are drilled on one side of the multilayer board using a back drilling method. In the design, there is an overlapping area between the base layer between the pads and the ground copper layer and the back drill hole. Resin is then inserted into the back drill hole; S2, film coating: dry film is coated on the circuit board. After film removal, the remaining dry film avoids the overlapping area; S3, copper-tin plating: copper layer is first plated on the entire circuit board, and then tin layer is plated on the copper layer to protect the copper layer. The area covered by the remaining dry film is not plated with copper or tin; S4, laser ablation: the tin layer on the overlapping area is ablated using a laser. Then, the remaining dry film from step S2 is removed. The copper layer not protected by the tin layer is etched away using an etching solution, thereby exposing the base layer between the pads and the ground copper layer; S5, nickel-gold plating: after removing the tin layer used for protection, nickel-gold is plated on the copper layer of the pads.

The invention provides a preparation method of an alumina plate ceramic membrane, and belongs to the technical field of ceramic membranes. The method comprises the following steps: preparing printing slurry; forming an aluminum oxide separation layer by adopting a photocuring 3D printing technology; degreasing and pre-sintering; ablating the aluminum oxide separation layer by adopting a laser ablation technology; repeating to obtain an aluminum oxide plate ceramic membrane semi-finished product; and sintering to obtain the aluminum oxide flat plate ceramic membrane. According to the method, only the aluminum oxide separation layer with the small thickness is machined, and the machining difficulty is relatively low. Meanwhile, the photocuring 3D printing technology and the laser ablation technology are combined and circulated for multiple times, the relation between the thickness and the performance during photocuring 3D printing of the aluminum oxide separation layer is balanced, and the aluminum oxide separation layer can be thinned to the needed thickness through the laser ablation technology; and meanwhile, the pore channel structure of the aluminum oxide separation layer is trimmed by laser, so that the using effect of the final aluminum oxide ceramic membrane is ensured.

The invention discloses a high-binding-force low-stress ceramic substrate and a manufacturing method thereof. The ceramic substrate comprises a ceramic layer and a metal circuit layer. The metal circuit layer is formed and fixed on the surface of the ceramic layer, a raised metal PAD is formed on the surface of the metal circuit layer through electroplating thickening, a honeycomb-shaped blind groove corresponding to the metal PAD is formed on the ceramic layer through laser etching, the bottom surface of the metal circuit layer is provided with an embedded part, and the embedded part is embedded into the ceramic layer. And the embedding part is embedded into the honeycomb-shaped blind groove and completely fills the honeycomb-shaped blind groove. The honeycomb-shaped blind grooves corresponding to the metal PAD are etched in the ceramic layer through laser ablation, and the depths of the honeycomb-shaped blind grooves are controlled to be 5-30 microns in a matched mode, so that after electroplating forming, the residual stress of an interface between the ceramic layer and the metal circuit layer is effectively reduced, meanwhile, the binding force between the metal circuit layer and the ceramic layer is effectively improved, and the service life of the metal circuit layer and the ceramic layer is prolonged. And the binding force is not reduced in a subsequent severe use environment, and the overall stability and reliability of the product are high.

Aspects of the disclosure include a membrane electrode assembly (MEA) with a trimmed proton-consuming electrode. An example vehicle comprises an electric motor, a battery, and an electrochemical cell with a proton-exchange membrane. The electrochemical cell includes a proton-generating electrode, a proton-consuming electrode, a membrane positioned between the proton-generating and proton-consuming electrodes (the proton-generating electrode, the proton-consuming electrode, and the membrane together forming a membrane electrode assembly), and a gas diffusion layer in direct contact with the proton-consuming electrode. The proton-consuming electrode is trimmed with respect to a first edge of the membrane and with respect to a second edge of the membrane. The first edge is orthogonal to the second edge.The proton-consuming electrode is cut to a focal depth that bypasses the membrane using laser ablation.

The present invention provides a method of manufacturing an electrostatic object clamp for a semiconductor processing apparatus, the method comprising the steps of: providing an electrode having a dielectric substrate; depositing a coating on the top surface of the dielectric substrate by alternately depositing: one or more conductive base layers, and one or more conductive protective layers; and laser ablating the coating to form one or more grooves in the coating to obtain a three-dimensional coating structure; and removing all regions of the one or more protective layers exposed after the step of laser ablation.

The utility model provides a kind of laser ablation surface treatment device and its production line, it is related to workpiece surface treatment technical field, the laser ablation surface treatment device includes workbench, first conveying mechanism, attitude adjusting mechanism and laser processing mechanism, first conveying mechanism includes first conveyor belt, and first conveyor belt is used to convey workpiece;Attitude adjusting mechanism includes adjusting drive component and two adjusting plates, two adjusting plates are spaced apart along the width direction of first conveyor belt, adjusting drive component is used to drive two adjusting plates to move towards each other or mutually far direction;Laser processing mechanism includes forward laser cleaning machine and lateral laser cleaning machine, the laser head of forward laser cleaning machine is set to the upper surface of workpiece, and the laser head of lateral laser cleaning machine is set to the side of workpiece. Through laser cleaning machine, workpiece is cleaned by laser burning, solve the problem that the existing device needs to be handheld and work, resulting in high labor intensity, low working efficiency.