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Preparation method for nano-tungsten oxide electrochromic thin film

A nano-tungsten oxide and electrochromic technology is applied in the field of preparation of nano-tungsten oxide thin films, which can solve the problems of inability to achieve fast response speed, low performance of electrochromic devices, and high crystallinity of thin films, and achieves easy control, coloring/ The effect of high achromatic contrast and fast preparation process

Active Publication Date: 2016-03-02
NANJING UNIV OF SCI & TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Chinese patent (200910059118.0) discloses a WO 3 Electrochromic thin film preparation method, the method adopts sol-gel method to prepare WO 3 Electrochromic film, but the quality of the film is not high, and the performance of the electrochromic device is low
Chinese patent (200910096737.7) discloses a magnetron sputtering method to prepare WO 3 Thin-film all-solid-state electrochromic devices, but the WO prepared by magnetron sputtering method 3 The film has high crystallinity, which is not conducive to the H + , Li + Injection and withdrawal, so that a faster response speed cannot be achieved

Method used

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  • Preparation method for nano-tungsten oxide electrochromic thin film
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  • Preparation method for nano-tungsten oxide electrochromic thin film

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Effect test

Embodiment 1

[0026] The liquid-phase laser ablation technology and the electrophoretic deposition method are combined to prepare the nano-tungsten oxide film. First, the tungsten source target is ablated by the liquid-phase laser to obtain a colloidal solution containing tungsten oxide nanoparticles; and then electrophoresis is performed in the obtained colloidal solution The preparation of a nano-tungsten oxide film by deposition on a transparent conductive glass substrate specifically includes the following steps:

[0027] Step 1. Add H with a concentration of 0.33% into the reaction vessel 2 O 2 Solution, put a tungsten target with a purity of 99.99% in H 2 O 2 In the solution, soak the solution over the surface of the target material, and stir the solution evenly with a magnetic stirrer.

[0028] Step 2. Adjust the optical path of the pulsed laser beam of the laser to focus the laser beam on the target material below the liquid level of the solvent. Select a laser with a wavelength of 1064nm...

Embodiment 2

[0033] The liquid-phase laser ablation technology and the electrophoretic deposition method are combined to prepare the nano-tungsten oxide film. First, the tungsten source target is ablated by the liquid-phase laser to obtain a colloidal solution containing tungsten oxide nanoparticles; and then electrophoresis is performed in the obtained colloidal solution The preparation of nano-tungsten oxide film by deposition on a transparent conductive glass substrate specifically includes the following steps:

[0034] Step 1. Add H into the reaction vessel 2 O solution, put a tungsten target with a purity of 99.99% in H 2 In O solution, make the solution immerse the surface of the target material, and stir the solution evenly with a magnetic stirrer.

[0035] Step 2. Adjust the optical path of the pulsed laser beam of the laser to focus the laser beam on the target material below the liquid level of the solvent. Use a laser with a wavelength of 532nm to ablate the tungsten target. The laser...

Embodiment 3

[0040] The liquid-phase laser ablation technology and the electrophoretic deposition method are combined to prepare the nano-tungsten oxide film. First, the tungsten source target is ablated by the liquid-phase laser to obtain a colloidal solution containing tungsten oxide nanoparticles; and then electrophoresis is performed in the obtained colloidal solution The preparation of nano-tungsten oxide film by deposition on a transparent conductive glass substrate specifically includes the following steps:

[0041] Step 1. Add H into the reaction vessel 2 O and H 2 O 2 For a mixed solution with a volume ratio of 100:1, a tungsten oxide target with a purity of 99.99% is placed in the above mixed solution, and the solution is immersed over the surface of the target, and the solution is uniformly stirred by a magnetic stirrer.

[0042] Step 2. Adjust the optical path of the pulsed laser beam of the laser to focus the laser beam on the target material below the liquid level of the solvent. S...

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Abstract

The present invention discloses a preparation method for a nano-tungsten oxide electrochromic thin film. The preparation method combines a liquid phase laser ablation method with an electrophoretic deposition method, and the preparation method comprises: firstly laser-ablating a tungsten source target material in a liquid phase environment by using a liquid phase laser ablation technique so as to obtain a colloid of highly active tungsten oxide nanoparticles; and then in the obtained colloid solution, preparing a nano tungsten oxide thin film on a transparent conductive glass substrate by virtue of electrophoretic deposition. The preparation method disclosed by the present invention is easy and convenient in operation, fast in manufacture process, mild in reaction conditions and easy to control, and the prepared nano WO3 electrochromic thin film responds quickly.

Description

technical field [0001] The invention relates to the technical field of semiconductor oxide material preparation, in particular to a method for preparing a nano-tungsten oxide thin film applicable to electrochromism, photochromism and intelligent display. Background technique [0002] Tungsten trioxide is an n-type wide bandgap semiconductor oxide (bandgap about 2.8eV), WO at low temperature and room temperature 3 It exists in the form of monoclinic and triclinic phases, while orthogonal and tetragonal phases appear at high temperatures. Its ideal crystal structure can be regarded as a tungsten-oxygen octahedron composed of a central W atom and 6 O atoms surrounding the W atom [WO 6 ] are connected by common vertices, and there are many gaps between the octahedrons, forming various channels, which can be used for the flow channels and embedded positions of ions, which are H + , Li + Good injector for plasma. Therefore WO 3 With its excellent properties such as fast respo...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C03C17/25
Inventor 邹友生窦康曾海波王沙龙董宇航
Owner NANJING UNIV OF SCI & TECH
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