Method for preparing multi-scale nano-composite structure through laser cleaning assisted laser ablation

Abstract

The invention provides a method for preparing a multi-scale nano-composite structure through laser cleaning assisted laser ablation. The method comprises the steps of establishing a light path, wherein a femtosecond laser outputs light, the light passes through reflecting mirrors to go into a scanning galvanometer, is focused through a circular lens of the scanning galvanometer and then is irradiated on an objective stage, and the femtosecond laser and the scanning galvanometer are connected with a computer; setting laser ablation parameters of a silicon material and fixing a monocrystalline silicon wafer sample to the mobile objective stage; controlling the scanning galvanometer through the computer to move a laser spot crossed grid, and carrying out laser ablation on the surface of the monocrystalline silicon wafer sample to obtain the surface covered with a layer of flocculent oxide deposited grid nanostructure; replacing the circular lens of the scanning galvanometer with a cylindrical lens to obtain an elliptical light spot; and setting laser cleaning parameters of silicon oxide deposition, controlling the scanning galvanometer to move the laser spot grid, and carrying out laser cleaning on the surface of the latticed nanostructure to obtain the multi-scale nano-composite structure. The method provided by the invention is simple in operation, environment-friendly, economical and efficient.

Description

technical field [0001] The invention belongs to the technical field of micro-nano structure preparation, in particular to a method for preparing a multi-scale micro-nano composite structure by laser cleaning-assisted laser ablation. Background technique [0002] Silicon-based absorbing materials have huge application markets in aerospace, national defense, new energy and other fields. It can be used as a solar cell in the visible light band; it can be used as a photodetector in the infrared band; it can be used as an absorber and a radiation source in the terahertz band. Therefore, using ultrafast laser processing technology to create an anti-reflection structure on the surface of silicon materials to achieve efficient absorption of electromagnetic waves by silicon materials is of great significance to people's production and life as well as national defense and military. [0003] Existing studies have shown that the multi-scale micro-nano composite structure can not only t...

AI Technical Summary

Problems solved by technology

However, when silicon materials are processed by laser in the air, the ablation deposition particles produced by laser ablation of silicon materials will be oxidized into silicon dioxide, so that the surface is covered with a layer of flocculent oxides, and the wave-absorbing properties are greatly reduced.

The current solution is to laser process silicon in an inert gas environment. The equipment is complex, which greatly increases the processing cost, and the waste gas generated at the same time causes environmental pollution.

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