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a kind of ga 2 o 3 Nanowire array thin film and preparation method thereof

A nanowire array, ga2o3 technology, applied in nanotechnology, nanotechnology, nanotechnology for sensing, etc., can solve the problems of high cost and short length of gallium oxide nanowire array, and achieve low cost and easy process parameters. Control, simple process effect

Active Publication Date: 2021-07-23
INST OF METAL RESEARCH - CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Currently, although a small amount of Ga 2 o 3 Nanowire arrays have been reported, but the prepared gallium oxide nanowire arrays are short in length and high in cost, and the Ga 2 o 3 Density and size control of nanowire arrays has not been reported so far

Method used

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  • a kind of ga <sub>2</sub> o <sub>3</sub> Nanowire array thin film and preparation method thereof
  • a kind of ga <sub>2</sub> o <sub>3</sub> Nanowire array thin film and preparation method thereof
  • a kind of ga <sub>2</sub> o <sub>3</sub> Nanowire array thin film and preparation method thereof

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Effect test

Embodiment 1

[0034] like Figure 4 Shown, this embodiment Ga 2 o 3 The preparation method of the nanowire array thin film is as follows:

[0035] 1. Weigh 0.2g of gallium metal 3 and place it in the corundum boat 2.

[0036] 2. According to Figure 4 Arrangement method Transfer the corundum boat 2 in step 1 into the quartz tube 1, the diameter of the used quartz tube 1 is Φ20mm. Then the quartz tube 1 is placed in a tube furnace with three temperature zones (upper temperature zone, middle temperature zone, and lower temperature zone), and the corundum boat 2 is located in the heating center of the middle temperature zone.

[0037]3. Place the quartz plate 4 with the gold-sprayed sapphire substrate 5 behind the corundum boat 2 in the quartz tube 1, and the distance between the substrate material and the metal gallium 3 is 4 cm. The position of the gold-sprayed sapphire substrate 5 is in the lower temperature zone of the three-zone tube furnace, and its function is to provide nucleation...

Embodiment 2

[0044] like Figure 4 Shown, this embodiment Ga 2 o 3 The preparation method of the nanowire array thin film is as follows:

[0045] 1. Weigh 0.5g gallium metal 3 and place it in the corundum boat 2.

[0046] 2. According to Figure 4 Arrangement method Transfer the corundum boat 2 in step 1 to the quartz tube 1, the diameter of the used quartz tube 1 is Φ25mm. Then place the quartz tube 1 in the heating center of the middle temperature zone of the three-temperature zone tube furnace.

[0047] 3. Place the quartz plate 4 with the gold-sprayed sapphire substrate 5 behind the corundum boat 2 in the quartz tube 1, and the distance between the substrate material and the gallium metal 3 is 3 cm. The position of the gold-sprayed sapphire substrate 5 is in the lower temperature zone of the three-zone tube furnace, and its function is to provide nucleation sites with low nucleation energy for the growth of gallium oxide nanowires. The thickness of the gold-sprayed layer is 6nm. ...

Embodiment 3

[0054] like Figure 4 Shown, this embodiment Ga 2 o 3 The preparation method of the nanowire array thin film is as follows:

[0055] 1. Weigh 0.3g gallium metal 3 and place it in the corundum boat 2.

[0056] 2. According to Figure 4 Arrangement method Transfer the corundum boat 2 in step 1 into the quartz tube 1, the diameter of the used quartz tube 1 is Φ15mm. Then place the quartz tube 1 in the heating center of the middle temperature zone of the three-temperature zone tube furnace.

[0057] 3. Place the quartz plate 4 with the gold-sprayed sapphire substrate 5 behind the corundum boat 2 in the quartz tube 1, and the distance between the substrate material and the metal gallium 3 is 5 cm. The position of the gold-sprayed sapphire substrate 5 is in the lower temperature zone of the three-zone tube furnace, and its function is to provide nucleation sites with low nucleation energy for the growth of gallium oxide nanowires. The thickness of the gold-sprayed layer is 4nm...

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Abstract

The invention relates to the field of nano photoelectric detection, nano high temperature gas sensitive detector, semiconductor nano material and nano technology, specifically a Ga 2 o 3 Nanowire array thin film and preparation method thereof, prepared Ga 2 o 3 The nanowire array thin film can be used for nano photodetectors, nano high temperature gas sensitive detectors or other nano optoelectronic devices. The film is epitaxially grown one-dimensional Ga with a fixed tilt angle. 2 o 3 array of nanowires. Ga 2 o 3 The diameter of a single gallium oxide nanowire in the nanowire array is 50-100 nanometers, the length of the nanowire is 5-50 microns, and gallium oxide nanosheets are self-catalyzed on the surface of the nanowire. The Ga 2 o 3 The nanowire array thin film is prepared by one-step method, and the prepared Ga 2 o 3 The nanowire array film size and array density are controllable, and has the advantages of simple process flow, convenient implementation, good repeatability, and large-scale preparation.

Description

technical field [0001] The invention relates to the field of nano photoelectric detection, nano high temperature gas sensitive detector, semiconductor nano material and nano technology, specifically a Ga 2 o 3 Nanowire array thin film and preparation method thereof, prepared Ga 2 o 3 The nanowire array thin film can be used for nano photodetectors, nano high temperature gas sensitive detectors or other nano optoelectronic devices. Background technique [0002] Compared with bulk materials, nanomaterials, especially one-dimensional nanomaterials (nanowires), have the characteristics of small size, large specific surface area, and strong light-harvesting ability, which endow them with unique physical and chemical properties. It has great application prospects in the miniaturization of electronic and optoelectronic devices and environmental catalytic purification, and has received extensive attention and research. [0003] One-dimensional Ga 2 o 3 Nanowires inherit the ul...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G01J1/42G01N27/12B82Y15/00B82Y30/00B82Y40/00
CPCB82Y15/00B82Y30/00B82Y40/00G01J1/429G01N27/12
Inventor 刘宝丹张偲李晶张兴来
Owner INST OF METAL RESEARCH - CHINESE ACAD OF SCI
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