Preparation method of high-heat-conduction aluminum nitride thick film

An aluminum nitride thick film, high thermal conductivity technology, applied in ion implantation plating, metal material coating process, coating and other directions, can solve the problems of slow, difficult commercialization, unable to prepare aluminum nitride thick film deposition speed and other problems , to achieve the effect of high thermal conductivity, simple method and easy adjustment of process parameters

Inactive Publication Date: 2013-06-26
辽宁法库陶瓷工程技术研究中心
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

This method mainly solves the problems that the existing technology cannot prepare aluminum nitride thick films, the deposition speed is slow, and it is difficult to commercialize.

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0015] Sputter Cleaning: 4×10 -3 Under the vacuum state of Pa, the substrate is sputtered and cleaned by passing high-purity Ar gas. Plating AlN film: first, the substrate should be heated to 100°C, the distance between the target and the substrate is 200mm, the range of negative bias voltage is set to 300V, the cathode current is 58A, and the nitrogen partial pressure is 4×10 -2 Pa, the deposition time is 30 minutes, and the AlN film with high thermal conductivity is 3 μm.

Embodiment 2

[0017] Sputter Cleaning: 6×10 -3 Under the vacuum state of Pa, the substrate is sputtered and cleaned by passing high-purity Ar gas. Plating AlN film: firstly, the substrate should be heated to 100°C, the distance between the target and the substrate is 200mm, the range of negative bias voltage is set to 500V, the cathode current is 60A, and the nitrogen partial pressure is 5×10 -2 Pa, the deposition time is 60 minutes, and a 5 μm high thermal conductivity AlN film is obtained.

Embodiment 3

[0019] Sputter Cleaning: 6×10 -3 Under the vacuum state of Pa, the substrate is sputtered and cleaned by passing high-purity Ar gas. Plating AlN film: firstly, the substrate should be heated to 100°C, the distance between the target and the substrate is 200mm, the variation range of the negative bias voltage is set to 600V, the cathode current is 65A, and the nitrogen partial pressure is 8×10 -2 Pa, the deposition time is 150 minutes, and a high thermal conductivity AlN film of 9 μm is obtained.

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Abstract

The invention relates to a preparation method of a high-heat-conduction aluminum nitride thick film, belongs to the technical field of surface coating preparation and application and mainly solves the technical problems that an aluminum nitride thick film can not be prepared, the deposition speed is low, commercialization is difficult to realize and the like in the prior art. According to the method, the aluminum nitride thick film is deposited through arc ion plating, the nitrogen/aluminum ratio in the film is uniform, the thickness of the prepared AlN high-heat-conduction film can be up to 3-10mu m, and a large bonding force can be generated between the film and a substrate, wherein the involved substrate material can be metal such as stainless steel, iron, copper, aluminum and the like, or can be an inorganic non-metal material such as ceramic, glass and the like, or can be a high-molecular organic polymer such as epoxy resin, polyimide and the like. The preparation method comprises the following steps: performing surface treatment on the substrate material; and by selecting pure aluminum as a cathode target material and using pure nitrogen gas as reacting gas, forming the AlN high-heat-conduction film through reaction between aluminum ions obtained by ionization and the nitrogen gas, wherein the purity of the aluminum target material is 99.99%, and the purity of the nitrogen gas is 99.999%. Thus, the method is applicable to multiple fields such as electronic measuring instruments, computer equipment, measurement and control systems, airplanes, precision weapons and the like.

Description

technical field [0001] The invention relates to a method for preparing a high thermal conductivity aluminum nitride thick film, which is suitable for many fields such as electronic measuring instruments, computer equipment, measurement and control systems, aircrafts, and precision weapons. The invention belongs to the technical field of surface coating preparation and application. Background technique [0002] With the continuous advancement of science and technology, the emergence and widespread popularization of electronic equipment, computers and household appliances have made electronic devices highly integrated and large-capacity, which has increasingly seriously affected the safe use of circuits. Especially with the prolongation of the working time, the temperature rises due to the heating of the device. The temperature rise will easily cause the working temperature of the electronic device to rise rapidly, the accuracy of the precision control electronic device will d...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C14/34C23C14/06
Inventor 高明媛韩绍娟许壮志薛健张明杨殿来
Owner 辽宁法库陶瓷工程技术研究中心
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