Preparation method of high-heat-conduction aluminum nitride thick film
An aluminum nitride thick film, high thermal conductivity technology, applied in ion implantation plating, metal material coating process, coating and other directions, can solve the problems of slow, difficult commercialization, unable to prepare aluminum nitride thick film deposition speed and other problems , to achieve the effect of high thermal conductivity, simple method and easy adjustment of process parameters
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Embodiment 1
[0015] Sputter Cleaning: 4×10 -3 Under the vacuum state of Pa, the substrate is sputtered and cleaned by passing high-purity Ar gas. Plating AlN film: first, the substrate should be heated to 100°C, the distance between the target and the substrate is 200mm, the range of negative bias voltage is set to 300V, the cathode current is 58A, and the nitrogen partial pressure is 4×10 -2 Pa, the deposition time is 30 minutes, and the AlN film with high thermal conductivity is 3 μm.
Embodiment 2
[0017] Sputter Cleaning: 6×10 -3 Under the vacuum state of Pa, the substrate is sputtered and cleaned by passing high-purity Ar gas. Plating AlN film: firstly, the substrate should be heated to 100°C, the distance between the target and the substrate is 200mm, the range of negative bias voltage is set to 500V, the cathode current is 60A, and the nitrogen partial pressure is 5×10 -2 Pa, the deposition time is 60 minutes, and a 5 μm high thermal conductivity AlN film is obtained.
Embodiment 3
[0019] Sputter Cleaning: 6×10 -3 Under the vacuum state of Pa, the substrate is sputtered and cleaned by passing high-purity Ar gas. Plating AlN film: firstly, the substrate should be heated to 100°C, the distance between the target and the substrate is 200mm, the variation range of the negative bias voltage is set to 600V, the cathode current is 65A, and the nitrogen partial pressure is 8×10 -2 Pa, the deposition time is 150 minutes, and a high thermal conductivity AlN film of 9 μm is obtained.
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