The invention relates to a preparation method of a high-heat-conduction aluminum nitride thick film, belongs to the technical field of surface coating preparation and application and mainly solves the technical problems that an aluminum nitride thick film can not be prepared, the deposition speed is low, commercialization is difficult to realize and the like in the prior art. According to the method, the aluminum nitride thick film is deposited through arc ion plating, the nitrogen/aluminum ratio in the film is uniform, the thickness of the prepared AlN high-heat-conduction film can be up to 3-10mu m, and a large bonding force can be generated between the film and a substrate, wherein the involved substrate material can be metal such as stainless steel, iron, copper, aluminum and the like, or can be an inorganic non-metal material such as ceramic, glass and the like, or can be a high-molecular organic polymer such as epoxy resin, polyimide and the like. The preparation method comprises the following steps: performing surface treatment on the substrate material; and by selecting pure aluminum as a cathode target material and using pure nitrogen gas as reacting gas, forming the AlN high-heat-conduction film through reaction between aluminum ions obtained by ionization and the nitrogen gas, wherein the purity of the aluminum target material is 99.99%, and the purity of the nitrogen gas is 99.999%. Thus, the method is applicable to multiple fields such as electronic measuring instruments, computer equipment, measurement and control systems, airplanes, precision weapons and the like.