Preparation method of aluminum nitride thick film with high heat conductivity and high heat dissipation properties

A high thermal conductivity, aluminum nitride technology, applied in the direction of ion implantation plating, coating, metal material coating technology, etc., can solve the problems of inability to prepare aluminum nitride thick film deposition speed, slow, difficult commercialization, etc., to achieve The effect of low oxygen content, high thermal conductivity, and simple method

Inactive Publication Date: 2018-06-29
辽宁法库陶瓷工程技术研究中心
View PDF3 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

This method mainly solves the problems that the existing technology cannot prepare aluminum nitride thick films, the deposition speed is slow, and it is difficult to commercialize.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0015] Sputter Cleaning: 4×10 -3 Under the vacuum state of Pa, the substrate is sputtered and cleaned by passing high-purity Ar gas. Plating A1N film: firstly, the substrate should be heated to 100°C, the distance between the target and the substrate is 200mm, the range of negative bias voltage is set to 300V, the cathode current is 58A, and the nitrogen partial pressure is 4×10 -2 Pa, the deposition time is 30 minutes, and a 3 μm high thermal conductivity AlN film is obtained.

Embodiment 2

[0017] Sputter Cleaning: 6×10 -3 Under the vacuum state of Pa, the substrate is sputtered and cleaned by passing high-purity Ar gas. Plating A1N film: first, the substrate should be heated to 100°C, the distance between the target and the substrate is 200mm, the range of negative bias voltage is set to 500V, the cathode current is 60A, and the nitrogen partial pressure is 5×10 -2 Pa, the deposition time is 60 minutes, and a 5 μm high thermal conductivity AlN film is obtained.

Embodiment 3

[0019] Sputter Cleaning: 6×10 -3 Under the vacuum state of Pa, the substrate is sputtered and cleaned by passing high-purity Ar gas. Plating A1N film: firstly, the substrate should be heated to 100°C, the distance between the target and the substrate is 200mm, the range of negative bias voltage is set to 600V, the cathode current is 65A, and the nitrogen partial pressure is 8×10 -2 Pa, the deposition time is 150 minutes, and a 9 μm high thermal conductivity AlN film is obtained.

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

PropertyMeasurementUnit
thicknessaaaaaaaaaa
Login to view more

Abstract

The invention discloses a preparation method of an aluminum nitride thick film with high heat conductivity and high heat dissipation properties. In the method, pure aluminum is selected as a cathode target, the purity of the aluminum target is 99.99%, pure nitrogen is adopted as reaction gas, the purity of nitrogen is 99.999%, and aluminum ions obtained through ionization react with nitrogen to form an A1N high-heat-conductivity film. The method comprises the implementation steps that 1, a workpiece substrate is cleaned, dried and placed into a sample chamber, vacuum pumping is carried out, and the vacuum degree needs to be controlled below 9*10<-3>Pa in order to obtain a high-quality aluminum nitride coating; 2, high-purity Ar gas is led in for carrying out sputtering cleaning; 3, argon leading, arc starting, negative bias adding and nitrogen leading are carried out, nitrogen pressure is 1-3*10<-1>Pa, and pre-bombardment cleaning is carried out under the negative bias of 250 V-650 V for 10-180 min. The aluminum nitride thick film can be deposited on the surface of a complex sample, and the film layer preparation method is most widely applied to the engineering technical field. Themethod is simple, operation is easy, the technology is practical, and the method is suitable for industrial production. The prepared aluminum nitride thick film is uniform in ratio, low in nitrogen content and high in heat conductivity.

Description

technical field [0001] The invention relates to a method for preparing an aluminum nitride thick film with high thermal conductivity and high heat dissipation performance, and the method is suitable for many fields such as electronic measuring instruments, computer equipment, measurement and control systems, aircrafts, and precision weapons. The invention belongs to the technical field of surface coating preparation and application. Background technique [0002] With the continuous advancement of science and technology, the emergence and widespread popularization of electronic equipment, computers and household appliances have made electronic devices highly integrated and large-capacity, which has increasingly seriously affected the safe use of circuits. Especially with the prolongation of the working time, the temperature rises due to the heating of the device. The temperature rise will easily cause the working temperature of the electronic device to rise rapidly, the accur...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Applications(China)
IPC IPC(8): C23C14/06C23C14/02C23C14/32
CPCC23C14/0021C23C14/021C23C14/0617C23C14/32
Inventor 吴学坤许壮志薛健张明初小葵
Owner 辽宁法库陶瓷工程技术研究中心
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap