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High-purity, high-strength and high-conductivity copper-based target and preparation method thereof

A high-purity, high-strength technology, applied in metal material coating process, ion implantation plating, coating, etc., can solve the problems of no purification process, difficult to guarantee alloy purity, melting and target purity and performance problems, etc. The effect of avoiding dynamic recrystallization, fine grain size, and reducing residual oxygen content

Active Publication Date: 2020-11-10
CENT SOUTH UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, in the molten state, copper can dissolve an infinite amount of oxygen, even in solid copper, it can still dissolve up to 35ppm of oxygen, while silver can dissolve more than 21 times its own volume of oxygen, which gives the melting and target purity and performance problems
CN107937878A discloses a method for preparing a copper-silver alloy target material. The copper-silver alloy target material is prepared by vacuum smelting and multi-pass pier rough drawing and long deformation. Assure

Method used

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  • High-purity, high-strength and high-conductivity copper-based target and preparation method thereof

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Effect test

Embodiment 1

[0026] The copper-based target proposed in this embodiment includes the following raw materials in weight percentages: 0.3 parts of silver powder, 8 parts of copper-silver strontium alloy powder, and 99.7 parts of copper powder; among them: the silver content of the silver-strontium alloy powder is 0.3wt% , Strontium content is 15ppm, the balance is copper. The copper-silver-strontium alloy powder is prepared by adding elemental metal according to the proportion of each component, then smelting in an argon atmosphere, and after smelting, atomizing in an argon atmosphere.

[0027] The preparation method includes the following steps:

[0028] S1. Prepare target raw materials: in terms of weight percentage, 0.3 parts of silver powder, 8 parts of copper-silver-strontium alloy powder, and 99.7 parts of copper powder. Weigh the silver powder, copper-silver-strontium alloy powder and copper powder respectively, and spare; the copper purity is greater than 99.99 %, the purity of the silve...

Embodiment 2

[0035] The copper-based target proposed in this embodiment includes the following raw materials in weight percentages: 0.1 part of silver powder, 5 parts of copper-silver strontium alloy powder, and 99.9 parts of copper powder; wherein: the silver content in the silver-strontium alloy powder is 0.1wt% , Strontium content is 15ppm, the balance is copper. Copper-silver-strontium alloy powder is prepared by adding metal element according to the proportion of each component, then smelting in argon atmosphere, and atomizing in argon atmosphere.

[0036] The preparation method includes the following steps:

[0037] S1. Prepare target raw materials: In terms of weight percentages, 0.1 part of silver powder, 5 parts of copper-silver-strontium alloy powder, and 9 parts of copper powder are 9.9 parts. Weigh the silver powder, copper-silver-strontium alloy powder and copper powder for use; the purity of copper is greater than 99.99%, the purity of the silver is greater than 99.9%.

[0038] S2...

Embodiment 3

[0044] The copper-based target proposed in this embodiment includes the following raw materials in weight percentages: 0.6 parts of silver powder, 10 parts of copper-silver strontium alloy powder, and 99.4 parts of copper powder. Among them: the silver-strontium alloy powder, the silver content is 0.6wt%, the strontium content is 15ppm, and the balance is copper; the copper-silver-strontium alloy powder is added with the metal element according to the proportion of each component, and then smelted under argon atmosphere Afterwards, it is made by atomizing in an argon atmosphere.

[0045] The preparation method includes the following steps:

[0046] S1. Prepare target raw materials: in terms of weight percentage, 0.6 parts of silver powder, 10 parts of copper-silver-strontium alloy powder, and 99.4 parts of copper powder. Weigh the silver powder, copper-silver-strontium alloy powder and copper powder respectively, and spare; the copper purity is greater than 99.99 %, the purity of ...

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Abstract

The invention discloses a high-purity, high-strength and high-conductivity copper-based target and a preparation method thereof. The high-purity, high-strength and high-conductivity copper-based target comprises the following raw materials of, in parts by weight, 0.1-1.0 part of high-purity silver powder, 1-10 parts of high-purity copper-silver-strontium alloy powder, the balance 99-99.9 parts ofcopper powder, and the sum of the weight parts of the silver powder and the copper powder is 100 parts in total, wherein the content of silver in the copper-silver-strontium alloy powder is 0.1% - 1.0%, the content of strontium in the copper-silver-strontium alloy powder is 5ppm - 20 ppm, and the balance copper. According to the high-purity, high-strength and high-conductivity copper-based targetand the preparation method thereof, the copper powder and the silver powder are subjected to cold isostatic pressing blank forming through a powder metallurgy method, it can be guaranteed that the proportion of the copper and the silver is kept consistent, and segregation of the silver in the melting process can be avoided; and according to the preparation method, multi-pass zone melting is carried out before a high-purity billet is prepared to obtain an alloy master billet so that the high purity of a subsequent target finished product can be ensured.

Description

Technical field [0001] The invention relates to the technical field of non-ferrous metal preparation and processing, in particular to a high-purity, high-strength, high-conductivity copper-based target material and a preparation method thereof. Background technique [0002] The sputtering target is an extremely important key material necessary for the manufacture of semiconductor chips. With the rapid development of the new generation of information technology industry technology, the requirements for high-purity metal sputtering targets are getting higher and higher. The purity, grain size, mechanical and electrical properties of the target material are critical to its application characteristics. Adding one or more alloying elements to high-purity copper may better control the grain size and uniformity of the target material, and improve the strength and stability of the target material itself. However, the presence of alloying elements will affect its resistivity and cause p...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C22C9/00C22C1/03C23C14/34
CPCC22C1/03C22C9/00C23C14/3414
Inventor 肖柱方梅李周龚深姜雁斌
Owner CENT SOUTH UNIV
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