Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

A gallium oxide heterojunction structure and its growth method and special device

A growth method and a heterojunction technology are applied to the nanoscale gallium oxide heterojunction structure, the gallium oxide heterojunction structure and its growth field, and can solve the problems of the complicated nanometer gallium oxide material and the difficulty in obtaining the heterojunction structure, etc. Achieve the effect of uniform size, high growth yield and huge specific surface area

Active Publication Date: 2016-06-01
INST OF METAL RESEARCH - CHINESE ACAD OF SCI
View PDF0 Cites 1 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] The purpose of the present invention is to provide a novel gallium oxide heterojunction structure and its preparation method and special device, to solve the problems in the prior art that the preparation of nano-gallium oxide materials is relatively cumbersome, and it is difficult to obtain a heterojunction structure.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • A gallium oxide heterojunction structure and its growth method and special device
  • A gallium oxide heterojunction structure and its growth method and special device
  • A gallium oxide heterojunction structure and its growth method and special device

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0044] This embodiment is directly deposited and grown k-Ga on the surface of Si sheet 2 o 3 / β-Ga 2 o 3 The heterojunction structure is as follows:

[0045] 1. Weigh a certain mass of β-Ga 2 o 3 Powder, filled with 1 / 2 volume of β-Ga in alumina ceramic boat 2 o 3 Powder, used β-Ga 2 o 3 The purity is 99.99wt%; then the alumina ceramic boat is placed in the center of the quartz tube, and a silicon wafer is placed as a substrate at 25-35 cm downstream of the quartz tube for the deposition and growth of gallium oxide nanostructures. In this embodiment, the silicon wafer used has a purity of >99.99wt%, a surface crystal orientation of , single-sided grinding, a surface roughness (Ra)≦0.3nm, a surface size of 20×20mm, and a thickness of 0.5mm.

[0046] 2. Use a mechanical pump to pump the air pressure in the quartz tube to 10 -2 Pa, into the quartz tube in step 1, the flow rate is 200 sccm of argon gas for 30 minutes to normal pressure, and the residual gas in the quartz ...

Embodiment 2

[0058] The difference from Example 1 is that this example directly deposits and grows k-Ga on the surface of Si sheet 2 o 3 / β-Ga 2 o 3 The heterojunction structure is as follows:

[0059] 1. Weigh a certain mass of β-Ga 2 o 3 Powder, filled with 1 / 2 volume of β-Ga in alumina ceramic boat 2 o 3 Powder, used β-Ga 2 o 3 The purity is 99.99wt%; then the alumina ceramic boat is placed in the center of the quartz tube, and a silicon wafer is placed 25-30 cm downstream of the quartz tube as a substrate for the deposition and growth of gallium oxide nanostructures. In this embodiment, the silicon wafer used has a purity of >99.99wt%, a surface crystal orientation of , single-sided grinding, a surface roughness (Ra)≦0.3nm, a surface size of 20×20mm, and a thickness of 0.5mm.

[0060] 2. Use a mechanical pump to pump the air pressure in the quartz tube to 10 -3 Pa, into the quartz tube in step 1, the flow rate is 100 sccm of argon gas for 40 minutes to normal pressure, and th...

Embodiment 3

[0070] The difference from Example 1 is that this example directly deposits and grows k-Ga on the surface of Si sheet 2 o 3 / β-Ga 2 o 3 The heterojunction structure is as follows:

[0071] 1. Weigh a certain mass of β-Ga 2 o 3 Powder, filled with 1 / 2 volume of β-Ga in alumina ceramic boat 2 o 3 Powder, used β-Ga 2 o3 The purity is 99.99wt%; then the alumina ceramic boat is placed in the center of the quartz tube, and a silicon wafer is placed 30-35 cm downstream of the quartz tube as a substrate for the deposition and growth of gallium oxide nanostructures. In this embodiment, the silicon wafer used has a purity of >99.99wt%, a surface crystal orientation of , single-sided grinding, a surface roughness (Ra)≦0.3nm, a surface size of 20×20mm, and a thickness of 0.5mm.

[0072] 2. Use a mechanical pump to pump the air pressure in the quartz tube to 10 -1 Pa, into the quartz tube in step 1, the flow rate is 150 sccm of argon for 30 minutes to normal pressure, and the resi...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
diameteraaaaaaaaaa
heightaaaaaaaaaa
lengthaaaaaaaaaa
Login to View More

Abstract

The invention belongs to the technical field of semiconductor materials and nanometer, specifically relates to a gallium oxide heterogeneous structure and a growth method thereof, and particularly relates to a method and a special device for a gallium oxide heterogeneous structure with a pseudo quartic symmetry nanometer size formed by beta-Ga2O3 and k-Ga2O3. The gallium oxide heterojunction comprises a beta-Ga2O3 nanowire trunk and a k-Ga2O3 nanorod on the surface of the beta-Ga2O3 nanometer linear trunk, wherein the length of the beta-Ga2O3 nanowire is 5-100 mu m and the diameter is 50-1000nm; the size of the k-Ga2O3 nanorod is 50-200nm and is distributed on the nanowire surface in a mode of pseudo quartic symmetry. The method adopted in the invention can be used for accurately controlling the temperature and ammonia gas flow in a deposition area in the process of chemical vapor deposition (CVD), so as to spontaneously form a k-Ga2O3 / beta-Ga2O3 heterogeneous structure, and the obtained k-Ga2O3 is a new crystal structure in a gallium oxide system and has rhombic symmetry. The prepared k-Ga2O3 / beta-Ga2O3 heterogeneous structure has extremely strong cathode ray fluorescence property in an ultraviolet region, has the discrete characteristic of luminescence and is suitable for serving as an ultraviolet light electricity detector and suitable for hydrogen production through photocatalytic water splitting.

Description

technical field [0001] The invention belongs to the field of semiconductor materials and nanotechnology, in particular to a gallium oxide heterojunction structure and a growth method thereof, in particular to a β-Ga 2 o 3 and k-Ga 2 o 3 Methods and dedicated devices for forming nanoscale gallium oxide heterojunction structures with pseudo-quartic symmetry. Background technique [0002] As a typical wide-bandgap oxide semiconductor material, gallium oxide has wide application potential in the field of optoelectronic devices, and can be used to prepare field effect transistors, transparent conductive electrodes, high-temperature gas-phase sensors, and photodetectors. Due to the small size and large specific surface area of ​​nanoscale gallium oxide materials, they exhibit different physical and chemical properties from bulk gallium oxide materials. On the other hand, gallium oxide has a variety of crystal forms, and different crystal forms have different structural stabili...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): C30B29/16C30B25/00C30B29/62B82Y30/00B82Y40/00
Inventor 姜辛杨兵刘宝丹
Owner INST OF METAL RESEARCH - CHINESE ACAD OF SCI
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com