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Resistive random access memory and preparation method thereof

A resistive memory, resistive switching technology, applied in static memory, digital memory information, information storage, etc., can solve the problems of large operating current of resistive memory, affecting the performance of resistive memory, etc., to reduce power consumption, reduce Affect and reduce the effect of operating current

Inactive Publication Date: 2013-04-24
PEKING UNIV
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  • Abstract
  • Description
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Problems solved by technology

[0004] Embodiments of the present invention provide a resistive variable memory and a preparation method thereof, so as to solve the problem that the existing resistive variable memory has a large operating current and affects the performance of the resistive variable memory

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  • Resistive random access memory and preparation method thereof
  • Resistive random access memory and preparation method thereof
  • Resistive random access memory and preparation method thereof

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Embodiment Construction

[0017] According to the working principle of the resistive variable memory, when the actual electrode area of ​​the resistive variable memory is smaller, the operating current is correspondingly smaller. The area of ​​the electrode where the resistance of the material changes. Therefore, reducing the actual electrode area of ​​the RRAM is one of the most effective methods for reducing the operating current of the RRAM. In the prior art, reducing the actual electrode area of ​​the resistive variable memory is mainly achieved by reducing the deposition area of ​​a certain layer or layers of the bottom electrode, the resistive material, and the top electrode. However, under the current technological conditions, the production cost will continue to rise with the reduction of the deposition area. When the deposition area is less than 1 μm*1 μm, the production of the resistive memory will be very difficult, so the actual electrode area of ​​​​the resistive memory will be reduced. I...

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Abstract

The invention provides a resistive random access memory and a preparation method thereof. The resistive random access memory is formed on a substrate. The resistive random access memory comprises a first electrode, resistive random materials and a second electrode, the first electrode, the resistive random materials and the second electrode are arranged on the surface of the substrate, the first electrode and the second electrode are arranged oppositely, and the resistive random materials are arranged between the first electrode and the second electrode, and simultaneously contacted with the first electrode and the second electrode. The area of the contacting surface of the first electrode and the substrate is larger than that of a first contacting surface of the first electrode and the resistive random materials, and / or the area of the contacting surface area of the second electrode and the substrate is larger than that of a second contacting surface of the second electrode and the resistive random materials. The resistive random access memory has the advantages of being small in operating current, low in power consumption, and the like.

Description

technical field [0001] The invention relates to the field of semiconductor devices, in particular to a resistive memory and a preparation method thereof. Background technique [0002] Resistive random access memory (RRAM, RESISTANCE RANDOM ACCESS MEMORY) is a new type of storage device. Due to the advantages of simple structure and compatibility with existing complementary metal oxide semiconductor (CMOS, COMPLEMENTARY METAL OXIDE SEMICONDUCTOR) technology, resistive memory has been increasingly The wider the application. The common resistive memory is generally a MIM (metal electrode-resistive material-metal electrode) structure, which is composed of a bottom electrode, a resistive material and a top electrode stacked on the substrate, and the bottom electrode is arranged on the substrate. The resistive switch material is arranged on the bottom electrode, and the top electrode is arranged on the resistive switch material. [0003] The resistive variable memory realizes da...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L45/00G11C13/00
Inventor 蔡一茂毛俊黄如王宗巍余牧溪
Owner PEKING UNIV
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