Multi-pixel ultra-small capacitance X-ray detection unit and detector

Abstract

The invention discloses a multi-pixel ultra-small capacitance X-ray detection unit and a detector, the multi-pixel ultra-small capacitance X-ray detection unit comprises an n-type silicon substrate, the top surface of the n-type silicon substrate is provided with a P + cathode, and the bottom surface of the n-type silicon substrate is provided with an n + anode; a first silicon dioxide rectangularframe is arranged on the top surface of the n-type silicon substrate; a second silicon dioxide rectangular frame is arranged in the first silicon dioxide rectangular frame; a first P + heavily-dopedion implantation region is formed between the first substrate and the second substrate; a second P + heavily doped ion implantation region is formed in the second silicon dioxide rectangular frame; and a gap for communicating the first P + heavily doped ion implantation region with the second P + heavily doped ion implantation region to form a P + cathode is formed in the second silicon dioxide rectangular frame, the gap is a third P + heavily doped ion implantation region, and a cathode aluminum layer is plated on the second P + heavily doped ion implantation region. The multi-pixel ultra-small capacitance X-ray detector is composed of a plurality of multi-pixel ultra-small capacitance X-ray detection units which are distributed in an array mode, and the electrode area and the capacitancevalue are small.

Description

technical field [0001] The invention belongs to the technical field of X-ray detectors, and relates to a multi-pixel ultra-small capacitance X-ray detection unit and a detector. Background technique [0002] There are many types of detectors, mainly proportional counters, scintillator detectors, gas detectors, semiconductor detectors, etc. The detection principles of various detectors are different. Pixel detectors are widely used in fields such as high-energy physics, aerospace and pulsar navigation. Silicon pixel detectors are one of the new semiconductor detectors, and large-area silicon pixel detectors can be obtained through arrays of pixel units of different shapes. The anode and cathode of traditional silicon pixel detectors are covered by metal electrodes, that is, aluminum layers, and the large effective electrode area makes the collection capacitance of the detector large. Capacitance is a sensitive factor in the silicon detector, which directly affects the noise...

AI Technical Summary

Problems solved by technology

[0003] The purpose of the embodiments of the present invention is to provide a multi-pixel ultra-small capacitance X-ray detection unit and a detector to solve the problem that the large effective electrode area of ​​the traditional silicon pixel detector makes the collection capacitance of the detector large, causing the detector to work the problem of loud noise

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