Resistive random access memory based on electrode structure reuse and preparation method thereof

Abstract

The invention provides a resistive random access memory and a preparation method thereof. The resistive random access memory comprises a plurality of upper electrodes, an insulating dielectric layer with low thermal conductivity, a resistive switching layer and a plurality of lower electrode layers in turn from top to bottom. The lower electrode layers and the resistive switching layer are in ohmic contact. The thermal breakdown voltage ET1 of the insulating dielectric film is lower than the thermal breakdown voltage ET2 of the resistive switching layer film. The resistive switching layer needs to apply a trigger voltage ETC to trigger the resistance switch function of the resistive switching layer material so as to make the resistive switching layer in a high or low resistance state, wherein ETC is lower than ET2. The resistive switching layer is an insulating dielectric layer when not triggered and in a fatigue state. A very small actual electrode is obtained, the cost is reduced, and the device is optimized. The performance parameters of the resistive random access memory are more concentrated while the operating current / voltage is greatly reduced, and fluctuation is reduced. Byusing the memory structure, the problem that an electrode cannot be reused when the resistive switching material under the electrode of the memory fails locally in the prior art is solved.

Description

technical field [0001] The invention belongs to the field of semiconductor non-memory in ultra-large scale integration, and specifically relates to a resistive variable memory with electrode structure multiplexing and a preparation method thereof Background technique [0002] Resistive variable memory is a new type of memory device that stores data by changing the resistance value of the resistive material by applying voltages of different polarities and magnitudes. Based on the position where the resistive switching process occurs, resistive memory is mainly divided into two categories, one is interface effect resistive memory, and its resistive switching process occurs at the non-ohmic contact layer interface of metal / semiconductor or semiconductor / semiconductor, and the other is In the bulk effect resistive memory, the upper and lower electrodes are in ohmic contact with the resistive material layer, and the resistive switching process occurs in the resistive material lay...

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Problems solved by technology

However, based on the limitations of the current MIM structure, even if the position of the probe is moved on the electrode, the resistive memory unit cannot be used, and only the electrode can be replaced to select other resistive memory cells. When the resistive material fails locally, the electrode cannot be reused

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