The invention discloses a method and device for preparing high-purity low-metallic
impurity tantalum chloride through a one-step process.
Tantalum and
chlorine serve as raw materials, wherein the
molar ratio is 200:(500-800); before a reaction,
nitrogen is injected into a chlorination furnace, wherein the
molar ratio of a
tantalum source to the
nitrogen is 200:(200-300), and injection time is 30-150 minutes; then the
nitrogen is replaced with
inert gas, preset temperature is reached,
chlorine is injected to react for 3-16 hours, and the temperature of the chlorination furnace is 300-600 DEG C. The chlorination furnace is connected with a receiving
tower,
chlorine / nitrogen /
inert gas is injected from the low end of the chlorination furnace, and a
vacuum pump is arranged on the side face of the receiving
tower. The volume of the receiving
tower is 1-5 times that of the chlorination furnace; an
air cooling and
water cooling combined cooling
system is adopted, the
tantalum pentachloride is collected from the bottom of the receiving tower, and the
metallic impurities of the prepared tantalum pentachloride crystals are 3 ppm or below. The process is short, equipment is simple, energy is saved, environmental friendliness is achieved, a rectifying step is omitted, and the high-purity tantalum pentachloride crystals with the low
metallic impurities can be prepared.