The invention discloses a 
semiconductor packaging method of 
wafer level 
silicon-based through hole, belonging to the field of 
semiconductor packaging. The packaging method substantially comprises the following steps: 1, making a cavity structure on a cover plate; 2, bonding the front surface of the cover plate with the front surface of a 
wafer through a bonding 
machine; 3, 
grinding the rear surface of the 
wafer by a grinder, and implementing a stress 
plasma etching on the rear surface of the wafer; 4, removing all 
silicon belonging to a scribe line region starting from the rear surface of the wafer; 5, 
etching the rear surface of the wafer in order to form 
silicon through holes, and exposing a bonding pad; 6, making 
passivation layers, 
metal layers and 
solder mask layers sequentially in the rear surface of the wafer and the silicon through holes, so as to compose a redistributed circuit layer, thereby conducting the solder pad to a designated 
solder ball position on the rear surface of the wafer; 7, making solder balls and 
cutting along the scribe line. By the implementation of the 
semiconductor packaging method of wafer level silicon-based through hole, the 
yield rate of wafer 
cutting technique is increased, the 
stress level in 
package structure is reduced, and the boundary dimension of the 
package structure is decreased.