Inverse E-type radio frequency power amplifier suitable for 5G

Abstract

The invention discloses an inverse E-type radio frequency power amplifier suitable for 5G. The inverse E-type radio frequency power amplifier comprises an input circuit, an input matching and stabilizing network, a filter bias circuit, a transistor, a harmonic control network with parasitic compensation, a fundamental wave matching circuit and an output circuit, wherein the harmonic control network comprises a first microstrip line, a second microstrip line, a third microstrip line and a fourth microstrip line; the input matching and stabilizing network is used for matching source impedance to50 ohms and ensuring that the transistor can stably work in a working frequency band; and the filter bias circuit is used for accessing drain bias voltage and grid bias voltage. The inverse E-type radio frequency power amplifier has the advantages that parasitic parameters of the drain electrode pin of the transistor can be compensated; and on the premise of ensuring good switching characteristics of the inverse E-type radio frequency power amplifier, the influence of higher harmonics is reduced, and the drain voltage and the drain current of the transistor cannot be overlapped and distortedin low-frequency and high-frequency working environments, and the working efficiency is high, and the output performance is good, and the drain peak voltage and the drain peak current of the transistor are low, and the transistor is not easy to break down.

Description

technical field [0001] The invention relates to an inverse class E radio frequency power amplifier, in particular to an inverse class E radio frequency power amplifier suitable for 5G. Background technique [0002] With the rapid development of wireless communication technology, limited spectrum resources have become very crowded. In order to adapt to information communication in different scenarios such as continuous wide-area coverage, high-capacity hotspots, low-latency high-reliability, and low-power consumption and large connections, the fifth-generation communication technology (5G) has emerged as the times require. As one of the most important components in the wireless communication system, the radio frequency power amplifier is connected with the radio frequency antenna and the transceiver components, and is an essential device for the wireless communication system. The performance of the RF power amplifier directly affects the performance of the wireless communica...

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Problems solved by technology

[0004] However, the existing inverse class E RF power amplifiers have the following problems: 1. Due to the influence of the parasitic parameters of the transistor drain pin and higher harmonics, the drain voltage and current inevitably overlap in the entire cycle, which cannot It works in an ideal switching state, which greatly reduces the working efficiency; 2. When the working frequency rises above gigahertz, the drain voltage and current waveforms are severely distorted and overlapped seriously, so at high frequencies, the reverse E The efficiency of the class RF power amplifier deteriorates seriously, drops sharply, and the output performance is poor; 3. The inverse class E RF power amplifier has high drain voltage and current, so the requirements for the withstand voltage and current resistance of the transistor are very high. Transistors are easily broken down during application, causing a lot of economic losses

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