The invention discloses an inverse E-type radio frequency power amplifier suitable for 5G. The inverse E-type radio frequency power amplifier comprises an input circuit, an input matching and stabilizing network, a filter bias circuit, a transistor, a harmonic control network with parasitic compensation, a fundamental wave matching circuit and an output circuit, wherein the harmonic control network comprises a first microstrip line, a second microstrip line, a third microstrip line and a fourth microstrip line; the input matching and stabilizing network is used for matching source impedance to50 ohms and ensuring that the transistor can stably work in a working frequency band; and the filter bias circuit is used for accessing drain bias voltage and grid bias voltage. The inverse E-type radio frequency power amplifier has the advantages that parasitic parameters of the drain electrode pin of the transistor can be compensated; and on the premise of ensuring good switching characteristics of the inverse E-type radio frequency power amplifier, the influence of higher harmonics is reduced, and the drain voltage and the drain current of the transistor cannot be overlapped and distortedin low-frequency and high-frequency working environments, and the working efficiency is high, and the output performance is good, and the drain peak voltage and the drain peak current of the transistor are low, and the transistor is not easy to break down.