Method for improving carbon nano tube parallel array density

Abstract

The invention discloses a method for improving the density in the process of carbon nano tube transfer. The method comprises the following steps: firstly, transferring the carbon nano tube parallel array growing on a substrate to a retractable membrane capable of shrinking in a single direction, such as the retractable materials of silicone rubber, polyester, a shape memory alloy and the like; secondly, shrinking the membrane in the direction perpendicular to the extension direction of the carbon nano tube to improve the density of the carbon nano tube parallel array; finally, transferring the carbon nano tube parallel array to a target substrate through the adoption of chemical methods. According to the method provided by the invention, the efficiency is high, the cost is low, the high-quality high-density carbon nano tube parallel array can be obtained, and the difficulty of transferring the conventional carbon nano tube can be solved successfully.

Description

Technical field [0001] The invention relates to a preparation method for increasing the density of carbon nanotubes during a transfer process to obtain a parallel array of high-density carbon nanotubes. In particular, it relates to a method for increasing the density of carbon nanotubes by means of a membrane material with unidirectional stretchability. method. Background technique [0002] Carbon nanotube (CNT) is a one-dimensional material with an ultra-long mean free path. Compared with traditional silicon-based field-effect transistors (MOSFET), carbon nanotube field-effect transistors (CNFETs) have excellent static control capabilities and device performance, and are a new generation of semiconductor technology that is expected to replace silicon-based chip technology. [0003] Because the drive current of a single carbon nanotube field effect transistor is low, the device is susceptible to the influence of external parasitic capacitance, resulting in slow speed. Therefore, t...

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Problems solved by technology

However, this method is only suitable for increasing the density of carbon nanotube arrays grown perpendicular to the substrate. For carbon nanotubes grown parallel to the substrate, which may have important application value in electronic devices, due to its large contact area with the substrate, the range The De Waals force is relatively stronger, direct sliding will cause the carbon nanotubes to be wound and bent, and the pressure applied during the shrinkage process will also cause the carbon tubes to bend in the vertical direction, and the patent finally uses the mechanical peeling method to bond the high elastic film with the carbon nanotubes. Nanotube separation, which may have a certain success rate for carbon nanotube forests with higher density and more entanglements, but for low-density and low-entangled carbon nanotube arrays that grow parallel to the substrate, due to the combination of carbon nanotubes and high elastic film When the attractive force between the carbon tubes and the silicon wafer is greater than that between the carbon nanotubes and the silicon wafer, the carbon nanotubes will adhere to the high elastic film, resulting in a substantial loss of the carbon tube density. Density-enhancing challenges for carbon nanotube arrays grown parallel to substrates