Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

PTAT reference current source circuit with high-voltage power supply

A reference current source and high-voltage power supply technology, which is applied in the direction of adjusting electrical variables, control/regulation systems, instruments, etc., can solve the problems of being unable to withstand high voltage, accelerating the power-on start-up process, and slow start-up speed

Active Publication Date: 2020-10-20
BEIJING SUPLET
View PDF6 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] Aiming at the problem that the PTAT reference current source structure composed of ordinary MOS tubes cannot withstand high voltage in the traditional scheme, the present invention proposes a PTAT reference current source circuit for high-voltage power supply, and the PTAT reference current generation module adopts LDMOS tube step-down combined with PNP triode Generate a reference current proportional to the absolute temperature, which solves the problem that the traditional structure cannot withstand high voltage; at the same time, the invention designs the first capacitor C to filter the dv / dt noise caused by replacing the ordinary MOS with the LDMOS In addition to the noise caused by dv / dt; for the problem of slow turn-on speed of LDMOS tubes, the present invention designs a current absorption module to extract current from the PTAT reference current generation module, thereby accelerating the power-on start-up process

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • PTAT reference current source circuit with high-voltage power supply
  • PTAT reference current source circuit with high-voltage power supply
  • PTAT reference current source circuit with high-voltage power supply

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0024] The technical solutions of the present invention will be described in detail below in conjunction with the accompanying drawings and specific embodiments.

[0025] Such as figure 2 Shown is a PTAT reference current source circuit for high-voltage power supply proposed by the present invention, including a current sink module and a PTAT reference current generation module, wherein the PTAT reference current generation module includes a first PNP transistor Q1, a second PNP transistor Q2, The second resistor R2, the first capacitor C, the third PMOS transistor P3, the fourth PMOS transistor P4, the third NMOS transistor N3, the fourth NMOS transistor N4 and the fifth NMOS transistor N5, the base of the first PNP transistor Q1 and The collectors are interconnected and connected to the base of the second PNP transistor Q2 and the source of the third PMOS transistor P3, and its emitter is connected to the supply voltage VCC; the collector of the second PNP transistor Q2 is ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

A PTAT reference current source circuit with high-voltage power supply comprises a current absorption module and a PTAT reference current generation module. The PTAT reference current generation module converts a temperature signal into a reference current in direct proportion to absolute temperature through clamping of a PNP type triode and outputs the reference current, and an LDMOS tube is adopted to replace a common MOS tube in a traditional structure, so that the circuit can adapt to high-voltage power supply. In view of the problem that the output reference current is influenced becausethe parasitic capacitance of a tube is increased and dv / dt noise of input voltage is more easily disturbed to a gate electrode of a fourth NMOS (N-channel metal oxide semiconductor) tube due to the fact that a common MOS (metal oxide semiconductor) is replaced by an LDMOS tube and the problem of lower opening speed caused by higher gate-source capacitance of the LDMOS tube, an LDMOS voltage-dividing current mirror and a capacitor noise filtering structure are further designed, so that high voltage can be borne, and the influence of dv / dt noise is reduced. Meanwhile, the current of the PTAT reference current generation module is extracted through the current absorption module, and the speed of establishing a stable state of a reference current is increased.

Description

technical field [0001] The invention belongs to the technical field of electronic circuits and relates to a PTAT reference current source circuit for high-voltage power supply. Background technique [0002] Reference current sources are widely used in analog circuit systems to determine system bias or provide reference current signals. In most cases, it is required that the output current of the reference current source needs to be indifferent to temperature or proportional to absolute temperature (PTAT). Taking the PTAT reference current source as an example, the PTAT reference current source will adjust the output reference current according to the temperature, which can compensate the influence of temperature on the circuit system to a certain extent. [0003] The basic principle of the PTAT reference current source is to collect the emitter junction voltage of the triode to adjust the output. Since the voltage of the emitter junction of the triode is closely related to ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): G05F1/56
CPCG05F1/56
Inventor 石峰连颖任俊黄亮
Owner BEIJING SUPLET
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products