Gate drive circuit without static power consumption

A technology of gate drive circuit and static power consumption, which is applied to the reliability improvement of logic circuits, electrical components, field effect transistors, etc.

Active Publication Date: 2018-09-14
UNIV OF ELECTRONICS SCI & TECH OF CHINA
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0006] In view of the above disadvantages, the present invention provides a gate drive circuit without static power consumption, which is driven by a floating power ...

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  • Gate drive circuit without static power consumption
  • Gate drive circuit without static power consumption
  • Gate drive circuit without static power consumption

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Embodiment Construction

[0057] The technical solution of the present invention will be described in detail below in conjunction with the accompanying drawings and embodiments.

[0058] A gate drive circuit without static power consumption provided by the present invention includes a floating power supply ground module, a low-voltage-high-voltage level shift module, a high-voltage-low voltage level shift module, a drive output module, a logic control module, and a high-side power transistor HMP and low-side power transistor HMN, where the floating power supply ground module is used to generate the floating power supply ground signal V for the gate drive circuit SSH and a high-side reset signal ENH; the drive output module includes a high-side drive output unit and a low-side drive output unit; the low-side power transistor HMN can be an ordinary low-voltage MOS transistor, and the high-side power transistor HMP is a P-type DMOS transistor. Such as image 3 As shown, the logic control module in the pr...

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Abstract

The invention discloses a gate drive circuit without static power consumption, and belongs to the technical field of electronic circuits. A floating power supply ground module is used for generating afloating power supply ground signal and a high side reset signal, wherein a low voltage-high voltage level shifting module is used for shifting a low voltage driving signal of a front stage to a highvoltage side to control a high side power transistor; a high voltage-low voltage level shifting module is used for feeding back a high side signal of the floating power supply to a low side, and closing an input stage in the low voltage-high voltage level shift module through a logic control module to ensure that the gate drive circuit provided by the invention is free from static power consumption; and a drive output module drives the high side power transistor and a low side power transistor respectively by using the high side drive output unit and the low side drive output unit, and the logic control module provides logic control. The gate drive circuit is free from static power consumption, and meanwhile the problem of voltage resistance of a gate source is solved well.

Description

technical field [0001] The invention relates to electronic circuit technology, in particular to a gate drive circuit without static power consumption. Background technique [0002] Gate drive circuits are involved in many chips, such as DC / DC converters, LED drivers, motor drivers, and Class D audio amplifiers. The traditional gate drive circuit is the level shifter (level shift) + inverter cascaded driving method, such as figure 1 As shown, this driving method has the following two disadvantages: [0003] 1. The circuit has static power consumption, which is not suitable for low power consumption systems. [0004] 2. The gate-source withstand voltage of the MOS tube. Since the cascade drive of the inverter is used, the withstand voltage between the gate and the source of the MOS tube must be greater than the power supply voltage, which will be limited by the process. [0005] Therefore, it is necessary to design a gate drive circuit with low static power consumption and ...

Claims

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Application Information

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IPC IPC(8): H03K19/003
CPCH03K19/00315H03K19/00384
Inventor 李泽宏熊涵风胡任任张成发赵念罗仕麟
Owner UNIV OF ELECTRONICS SCI & TECH OF CHINA
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