Vertical-type capacitor structure and manufacturing method thereof

Abstract

The invention relates to a vertical-type capacitor structure and a manufacturing method of the vertical-type capacitor structure, and belongs to the technical field of micro-electronic passive devices. The vertical-type capacitor structure structurally and specifically comprises a deep-groove structure, insulating layers, conducting layers and a dielectric layer, wherein the deep-groove structure is located inside a wafer substrate, the insulating layers and the conducting layers are sequentially deposited on the inner side wall of a deep groove, and the dielectric layer is filled between the conducting layers. The insulating layers, the conducting layers, the dielectric layer and the deep groove are the same in height. On the basis of the principle that the area of a capacitor is expanded in the direction perpendicular to the substrate, the area of an plate electrode in the perpendicular direction is utilized, the processes such as sputtering and electroplating are adopted to manufacture a metal plate electrode, and the plate electrode is made of low electrical resistivity materials, like metal. With the combination of a silicon through hole technology, the vertical-type capacitor with a large depth-to-width ratio is achieved. With the combination of a substrate back thinning technology, the vertical-type capacitor structure penetrates through the substrate, the vertical-type capacitor structure can be used as a high-frequency channel between multi-layer chips, the area of the plate can be greatly saved, and the integration level of an integrated circuit is improved.

Description

technical field [0001] The invention relates to a vertical capacitor structure and a manufacturing method thereof, belonging to the technical field of microelectronic passive devices. Background technique [0002] Capacitors are passive devices with the function of storing charges, and have electrical functions such as decoupling, switching noise suppression, bypass filtering, AC / DC conversion, and signal isolation. It has important functions both in discrete device circuits and integrated circuits. Capacitance values ​​typically vary on the order of picofarads (pF) to microfarads (μF). [0003] In the development of integrated circuits for more than 40 years, the feature size of transistors has been continuously reduced following Moore's Law, and the functions and performance of integrated circuits have been continuously improved. However, the size of the capacitor cannot be effectively reduced due to the limitation of the dielectric material, and it is currently much lar...

AI Technical Summary

Problems solved by technology

The existing trench capacitor structure cannot be completely called a vertical capacitor. Although the capacitor area is expanded in the vertical substrate method, the upper and lower electrode plates are still similar to the flat capacitor, and the electrode plate filling material is mostly polysilicon. , the resistance value is large, and the surface of the groove cannot be fully charged

On the other hand, the existing deep trench capacitor structure is mostly used for memory, and has not been applied to high-frequency channels between multi-layer chips in three-dimensional integrated circuits.

Images