Method for manufacturing LED with vertical type through holes

A production method and vertical technology, applied in the direction of electrical components, circuits, semiconductor devices, etc., can solve the problems of N-type GaN40 dark cracks, low LED chip yield, damage, etc., to reduce barriers, improve external quantum efficiency, reduce Effect of Gold Wire Cost

Inactive Publication Date: 2014-09-24
ENRAYTEK OPTOELECTRONICS
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  • Abstract
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  • Claims
  • Application Information

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Problems solved by technology

Since the N-type GaN40 thin film is relatively thin after the laser stripping of the vertical LED chip, it is easy to cause dark cracks or

Method used

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  • Method for manufacturing LED with vertical type through holes
  • Method for manufacturing LED with vertical type through holes
  • Method for manufacturing LED with vertical type through holes

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Embodiment Construction

[0027] The manufacturing method of the through-hole vertical LED of the present invention will be described in more detail below in conjunction with schematic diagrams, wherein a preferred embodiment of the present invention is shown, and it should be understood that those skilled in the art can modify the present invention described here and still realize the present invention. Beneficial effects of the invention. Therefore, the following description should be understood as the broad knowledge of those skilled in the art, but not as a limitation of the present invention.

[0028] In the interest of clarity, not all features of an actual implementation are described. In the following description, well-known functions and constructions are not described in detail since they would obscure the invention with unnecessary detail. It should be appreciated that in the development of any actual embodiment, numerous implementation details must be worked out to achieve the developer's ...

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Abstract

The invention provides a method for manufacturing an LED with vertical type through holes. Before the N electrode and the P electrode are formed, the through hole technology is adopted, the through holes are formed in a bonding substrate, a connecting layer and an epitaxial layer, N-GaN or transparent conducting thin film is exposed out through the through holes, then passivation layers are formed on the lateral walls of the through holes and the partial surface of the bonding substrate, the N electrode is formed in the through holes and the surfaces of the passivation layers, the P electrode is formed on the bonding substrate, the N electrode is connected with the N-GaN or the transparent conducting thin film, the N electrode is accordingly led out from the bonding substrate through the through holes, blocking of the N electrode on emitted light of the light emitting face is reduced, and the external quantum efficiency is improved; meanwhile, the N electrode is formed on the surface of the bonding substrate, then the reflow soldering packaging mode is adopted, and packaging with the routing process is not needed, so that damage of routing to the epitaxial layer is avoided, and the cost of gold wires for the packaging process is reduced.

Description

technical field [0001] The invention relates to the field of LED manufacture, in particular to a method for manufacturing a through-hole vertical LED. Background technique [0002] In recent years, research on high-power light-emitting diodes (Light-Emitting Diode, LED) has become a trend. However, LED chips with the same side structure have disadvantages such as current crowding, high voltage, and difficulty in heat dissipation, making it difficult to meet high-power requirements. The vertical LED chip can not only effectively solve the crowding effect under high current injection, but also alleviate the decrease in internal quantum efficiency caused by high current injection, and improve the photoelectric performance of the vertical LED chip. GaN-based vertical LEDs have the advantages of good heat dissipation, high current carrying capacity, high luminous intensity, low power consumption, and long life, and are widely used in general lighting, landscape lighting, special ...

Claims

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Application Information

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IPC IPC(8): H01L33/00
CPCH01L33/382H01L2933/0016
Inventor 张楠
Owner ENRAYTEK OPTOELECTRONICS
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