Ring removing method of Taiko thinning process

A technology, the technology of Taiko, which is applied in the ring removal field of the Taiko thinning process, can solve the problems of edge chipping, wafer breaking, fragmentation, etc.

Active Publication Date: 2015-04-15
SHANGHAI HUAHONG GRACE SEMICON MFG CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In the existing ring cutting process steps, it is easy to produce edge chipping and cause the entire wafer to break, that is, the existing ring c

Method used

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  • Ring removing method of Taiko thinning process
  • Ring removing method of Taiko thinning process
  • Ring removing method of Taiko thinning process

Examples

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Example Embodiment

[0026] Such as figure 1 Shown is a flowchart of a method according to an embodiment of the present invention; Figure 2A to Figure 2D What is shown is a schematic diagram of the wafer structure in each step of the method of the embodiment of the present invention. The ring removing method of the Taiko thinning process in the embodiment of the present invention includes the following steps:

[0027] Step one, such as Figure 2A As shown, the back surface of the wafer is thinned using the Tai drum thinning process, the middle portion 1a of the wafer is thinned to the required thickness, and the edge portion of the wafer is not thinned to form a support ring 1b.

[0028] The middle portion 1a of the wafer is used to form integrated circuit devices. Preferably, the thickness of the middle portion 1a of the wafer after back-thinning is 25 micrometers to 200 micrometers, and the specific thickness can be adjusted according to the requirements of the integrated circuit device.

[0029] The...

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Abstract

The invention discloses a ring removing method of a Taiko thinning process. The method includes: using the Taiko thinning process to thin the back of a wafer; completing a back process at the back of the wafer; attaching the wafer to a cutting rubber belt and fixing the same on a wafer ring; cutting at a position 2-10mm away from the inner side of the outer edge of the middle part of the wafer to form a buffer groove; using a ring cutting process to remove or flatly grind a support ring. By the method, wafer breaking rate during ring cutting can be lowered or wafer breaking during ring cutting can be prevented completely.

Description

technical field [0001] The invention relates to a semiconductor integrated circuit manufacturing process method, in particular to a ring-removing method of a Taiko thinning process. Background technique [0002] The Taiko thinning process is an ultra-thin thinning process developed by DISCO Corporation of Japan. The Taiko thinning process does not thin the entire plane of the wafer, that is, the silicon wafer, but only thins the middle part of the wafer. , the edge portion of the wafer is not ground and thinned, the width of the edge portion without thinning is about 2 mm to 5 mm, and the support ring is formed by the edge portion without thinning. [0003] Generally, when the silicon wafer is thin to a certain extent and has a large area, its mechanical strength will be greatly reduced. Taking an 8-inch silicon wafer as an example, when the thickness of the silicon wafer is less than 200 microns, the silicon wafer will be curled, so it cannot continue to be transported. tr...

Claims

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Application Information

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IPC IPC(8): H01L21/02H01L21/302
CPCH01L21/02H01L21/304
Inventor 郁新举刘玮荪黄锦才
Owner SHANGHAI HUAHONG GRACE SEMICON MFG CORP
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