Back contact heterojunction solar battery
A solar cell and heterojunction technology, applied in the field of solar cells, can solve the problems of increasing the density of carrier recombination defects, affecting the collection and transmission of photo-generated current, and affecting the conversion efficiency of solar cells, so as to improve the photoelectric conversion efficiency and current. , the effect of improving the conversion efficiency
A solar cell and heterojunction technology, applied in the field of solar cells, can solve the problems of increasing the density of carrier recombination defects, affecting the collection and transmission of photo-generated current, and affecting the conversion efficiency of solar cells, so as to improve the photoelectric conversion efficiency and current. , the effect of improving the conversion efficiency
CN102184976AInactive Publication Date: 2011-09-14山东力诺太阳能电力股份有限公司
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[0027] The technical solutions of the present invention will be described below in conjunction with the accompanying drawings and examples, but the present invention is not limited thereto.
[0028] Such as figure 1 As shown, this embodiment one
[0029] The N-type crystalline silicon 1 is made of an N-type single crystal silicon wafer, and the surface of the N-type crystalline silicon 1 is pre-cleaned and textured by using a semiconductor cleaning process. The thickness of the N-type crystalline silicon 1 used is 200um, the resistivity is 0.5~3Ω.cm, the silicon dioxide layer on the surface of the N-type crystalline silicon 1 is removed with 1~5% hydrofluoric acid, and the concentration is less than 3% NaOH and IPA (isopropanol) mixed liquid at about 80°C to prepare pyramid-shaped suede. Increase the absorption of sunlight, increase the area of the PN junction, and increase the short-circuit current. The subsequent N-type crystalline silicon 1 is cleaned by an acid cleani...
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The invention relates to a solar battery, in particular to a back contact heterojunction solar battery, comprising a transparent conducting film TCO, a P-a-Si amorphous silicon film, an i-a-Si intrinsic amorphous silicon film, an N-C-SiN type crystalline silicon, an i-a-Si intrinsic amorphous silicon film, an N-a-SiN type amorphous silicon film, a penetrative type back electrode and a back electrode which are overlapped in sequence from top to bottom. The solar battery can avoid the photoconduced attenuation phenomenon of the conventional P-type crystalline silicon solar battery, the back contact electrode reduces the contact resistance, and effectively reduces the shading ratio of a light-receiving surface, thereby increasing the current collection rate and improving the conversion efficiency of the solar battery; as the temperature coefficient is low, the back contact heterojunction solar battery is suitable for a high temperature environment; and the low-temperature process simplifies the production process greatly and reduces the production cost, so that the back contact heterojunction solar battery is suitable for industrial development.
Description
technical field [0001] The invention relates to a solar cell, in particular to a back contact heterojunction solar cell. Background technique [0002] In the 21st century, energy crisis and environmental pollution have become global problems that need to be solved urgently. The development of safe green energy has become the main method to solve the crisis. Among them, solar cells have become the goal of competing development of countries all over the world because of their cleanliness, safety and renewability. At present, the main development direction of solar cells is to reduce costs and increase efficiency. [0003] The heterojunction solar cell composed of new amorphous silicon and crystalline silicon has a simple structure and simple process. It combines the advantages of high carrier mobility of crystalline silicon with the advantages of low-temperature chemical vapor deposition of amorphous silicon technology, and has become the leading solar cell in the solar indu...
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Patent Timeline
14 Sep 2011
Publication
CN102184976A
- IPC
- H01L31/0224; H01L31/075
- CPC
- Y02E10/50; Y02E10/548
- Inventors
- 张黎明; 李玉花