334results about How to "Improve bonding performance" patented technology

The invention relates to a microtube device and a using method thereof. The microtube device is characterized by comprising an upper layer of top cap layer and a lower layer of substrate layer, wherein the top cap layer is tightly connected with the surface of the substrate layer; the top cap layer and / or the substrate layer are / is provided with a branch microtube; the branch microtube consists of at least one activity screening tube, a buffer cavity and at least two branch tubes which are symmetrically distributed to the center of the buffer cavity; the buffer cavity is connected with the activity screening tube and the branch tube; meanwhile, the top cap layers corresponding to all the end positions of the branch microtube are provided with a hole respectively to form a sample inlet pool and a sample outlet pool; the sample inlet pools are communicated with the corresponding activity screening tube respectively; and the sample outlet pools are communicated with the corresponding branch tubes respectively. Cells can be cultured in situ in the sample outlet pool and can continuously generate a chemotactic matter by selectively adding cells capable of releasing the chemotactic matter into one or more sample outlet pools, so that uniform and stable chemical gradient fields are generated in the buffer cavity and the branch tubes. The microtube device has the advantages of simple manufacturing steps, low cost, quick and effective screening process, and easy popularization and use in ordinary laboratories.

The purpose of the invention is to improve the reliability at which a bonding wire for semiconductors that is used in high-temperature and high-humidity environments is bonded to an aluminum pad. The solution is that a ternary-alloy-based wire comprising 4-10 mass% of gold having a purity equal to or greater than 99.999 mass%, and 2-5 mass% of palladium having a purity equal to or greater than 99.99 mass%, the remainder being constituted by silver having a purity equal to or greater than 99.999 mass%. The bonding wire for semiconductors contains 15-70 wt ppm of an oxidizing non-noble metal j element, and is subjected to an annealing heat treatment before being continuously drawn using a die, to a refining heat treatment after being continuously drawn using a die, and to ball-bonding in a nitrogen atmosphere. Corrosion between an Ag2Al intermetallic compound layer and the Ag-Au-Pd ternary alloy wire at the bonding interface between an aluminum pad and the wire is inhibited by Au2Al and a Pd-rich layer.