Bonding silver alloy wire for semiconductor, and manufacturing method thereof

A manufacturing method and technology of silver alloy, applied in the direction of semiconductor devices, electric solid devices, electrical components, etc., can solve problems such as increasing product costs, achieve increased stability, simple hydrogen absorption process, good bonding performance and reliability Effect

Active Publication Date: 2014-10-01
NICHE TECH KAISER SHANTOU
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The patent CN103184362A applied by Taiwan LG in China discloses this method, but this method uses a gold plating process, which increases the product cost

Method used

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  • Bonding silver alloy wire for semiconductor, and manufacturing method thereof
  • Bonding silver alloy wire for semiconductor, and manufacturing method thereof
  • Bonding silver alloy wire for semiconductor, and manufacturing method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment

[0033] The following table 1 configures the wire composition:

[0034] Table 1. Composition of wire materials

[0035] Example

Ca

Y

La

Ce

Mg

Bi

Fe

Cu

Au

Pd*

Ag

1

-

-

-

-

-

-

-

-

-

3.40％

margin

2

7.50％

3

100

-

-

-

30

-

-

-

-

3.40％

margin

4

--

60

2.10％

margin

5

80

1000

3.00％

margin

6

80

-

-

-

20

-

20

40

3000

3.40％

margin

7

30

50

8.00％

margin

8

70

20

30

4.50％

margin

9

40

20

20

6.20％

margin

...

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Abstract

The invention provides a bonding silver alloy wire for a semiconductor, and a manufacturing method thereof. The performance of the silver alloy wire material is improved through injection of certain amount of hydrogen into palladium-contained silver wire and combination of an alloy technology and a wire stretching technology, the vulcanization and oxidization resistant ability of the wire is improved, and the bonded area and the bonding strength under N2 atmosphere in ball bonding are improved, so that the electric conducting ability and the reliability of the wire are improved.

Description

【Technical field】 [0001] The invention relates to the field of integrated circuit materials, in particular to a semiconductor bonding silver alloy wire and a manufacturing method thereof. 【Background technique】 [0002] Bonding wire is the main way to connect the chip to the external packaging substrate (substrate) and / or multilayer circuit board (PCB). The development trend of bonding wire is mainly the products with miniaturized wire diameter, high floor life and high bobbin length from the application direction. From the chemical composition, there are mainly copper wires (including bare copper wires, palladium-plated copper wires, Flash gold palladium-plated copper wire) has largely replaced gold wire in the semiconductor field, while silver wire and silver alloy wire have replaced gold wire in LED and some IC packaging applications. Compared with gold wire, the main advantage of silver alloy wire is that the product cost is low, the softness of the wire is similar to t...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C22C5/06C22F1/14
CPCH01L2224/45139H01L24/43H01L2224/43848H01L2224/45015H01L2224/48463H01L2224/85075H01L2924/00011H01L2224/43H01L2224/45H01L2224/85065H01L2924/01001H01L2924/01046H01L2924/01007H01L2924/01204H01L2924/20751H01L2924/20752H01L2924/20753H01L2924/20754H01L2924/20755H01L2924/0102H01L2924/01039H01L2924/01057H01L2924/01058H01L2924/01012H01L2924/01083H01L2924/01026H01L2924/01029H01L2924/01079H01L2924/01049H01L2924/00012H01L2924/01005
Inventor 周振基周博轩任智
Owner NICHE TECH KAISER SHANTOU
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