Ag-au-pd ternary alloy-based bonding wire

An ag-au-pd, ternary alloy technology, applied in the field of Ag-Au-Pd ternary alloy bonding wire, can solve the problem of unused Ag-Au-Pd ternary alloy bonding wire, unstable molten ball shape, Inability to maintain performance and other problems, to achieve the effect of reducing irregularity, high bonding reliability, and corrosion inhibition

Active Publication Date: 2013-06-12
TANAKA DENSHI KOGYO KK
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0007] However, in the case of a bonding wire made of a Ag-Au-Pd ternary alloy, there is a fact that the greater the content of silver (Ag), the more oxygen is introduced from the air, so that the surface tension becomes quite Weak, so that the shape of the molten ball becomes unstable, and also brings about the precipitation of the above-mentioned oxides, it is only possible to obtain the connection by ultrasonic wedge bonding
[0008] Since resin-sealed semiconductor devices have come to be used for automotive device ICs in which high reliability is required despite severe conditions of elevated temperatures, and for ICs for high-frequency waves and high-brightness LEDs whose operating temperatures have been raised to be very high, there have been Bonding wires made of Ag-Au-Pd ternary alloys with final annealing are not able to maintain their properties at such high temperatures
For these reasons, the fact is that the Ag-Au-Pd ternary alloy bonding wire has not been put into use

Method used

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Embodiment Construction

[0040] Invention embodiment

[0041] The Ag-Au-Pd alloy having the element composition shown in the left half of Table 1 was prepared by melt casting, and the wire of 10 mm diameter was elongated to 3 mm diameter and annealed at 600 degrees Celsius for 30 minutes, and then the wire was drawn Grow to 0.1mm diameter and annealed at 600 degrees Celsius for 30 minutes. After that, by performing the final wet continuous stretching, the inventors prepared 20-micrometer-thick bonding wires 1-27 (hereinafter referred to as invention wires) made of the Ag-Au-Pd alloy according to the present invention and used more than the original Invented bonding wires 28-36 made of Ag-Au-Pd alloy in the composition range (hereinafter referred to as comparison wires). These invention wires 1-27 and comparison wires 28-36 were placed on a wire bonder (trade name: Maxμm Ultra) manufactured by Kulicke & Soffa, and bonded to a semiconductor IC chip mounted in an atmosphere of purging nitrogen. On the 50 ...

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Abstract

The purpose of the invention is to improve the reliability at which a bonding wire for semiconductors that is used in high-temperature and high-humidity environments is bonded to an aluminum pad. The solution is that a ternary-alloy-based wire comprising 4-10 mass% of gold having a purity equal to or greater than 99.999 mass%, and 2-5 mass% of palladium having a purity equal to or greater than 99.99 mass%, the remainder being constituted by silver having a purity equal to or greater than 99.999 mass%. The bonding wire for semiconductors contains 15-70 wt ppm of an oxidizing non-noble metal j element, and is subjected to an annealing heat treatment before being continuously drawn using a die, to a refining heat treatment after being continuously drawn using a die, and to ball-bonding in a nitrogen atmosphere. Corrosion between an Ag2Al intermetallic compound layer and the Ag-Au-Pd ternary alloy wire at the bonding interface between an aluminum pad and the wire is inhibited by Au2Al and a Pd-rich layer.

Description

Technical field [0001] The present invention relates to a bonding wire made of Ag-Au-Pd ternary alloy. The bonding wire is suitable for connecting a substrate used in a semiconductor device, such as an IC chip electrode, with an external lead wire, and particularly relates to a Ag-Au-Pd ternary alloy bonding wire used under high temperature conditions such as in motor vehicles or in high-speed devices. Background technique [0002] Traditionally, as a gold wire for connecting IC chip electrodes to external lead wires in semiconductor devices, high-purity gold doped with trace amounts of another metal element has been widely used for reasons of high reliability. Gold wire with a purity of more than mass%. The use of this pure gold wire is such that one end of the wire is connected to the pure aluminum (Al) solder joint or aluminum alloy solder joint on the electrode of the IC chip by using ultrasonic assisted hot bonding, and the other end is connected to the external lead on the...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/60C22C5/06
CPCH01L24/05H01L24/43H01L24/45H01L24/48H01L2224/05624H01L2224/431H01L2224/43848H01L2224/45139H01L2224/48463H01L2224/48507H01L2224/85075H01L2924/01012H01L2924/01029H01L2924/01047H01L2924/01049H01L2924/0105H01L2924/01057H01L2924/01058H01L2924/01082H01L2924/01019H01L2924/0102H01L2924/01033H01L2924/01063H01L2924/01078H01L2924/01327H01L2224/45144H01L2224/45164H01L2224/48599H01L2224/48624H01L2224/04042H01L2224/45015H01L2224/48824H01L2224/45147H01L2924/00011C22C5/06H01L2924/00014H01L2924/01079H01L2924/01007H01L2924/01046H01L2924/01039H01L2924/01064H01L2924/0106H01L2924/01062H01L2924/01004H01L2924/01083H01L2924/00H01L2924/00015H01L2924/01204H01L2924/013H01L2924/20759H01L2924/2076H01L2924/20755H01L2924/20756H01L2924/20757H01L2924/20758H01L2924/2075H01L2924/20754H01L2924/01205H01L2924/01022H01L2924/01077H01L2924/00013H01L2924/01006H01L2924/01005H01L2924/01013
Inventor 千叶淳手岛聪小林佑安德优希
Owner TANAKA DENSHI KOGYO KK
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