102 results about "Wedge bonding" patented technology

It is an object of the present invention to provide a multilayer wire which can accomplish both ball bonding property and wire workability simultaneously, and which enhances a loop stability, a pull strength, and a wedge bonding property. A semiconductor bonding wire comprises a core member mainly composed of equal to or greater than one kind of following elements: Cu, Au, and Ag, and an outer layer formed on the core member and mainly composed of Pd. A total hydrogen concentration contained in a whole wire is within a range from 0.0001 to 0.008 mass %.

Methods and systems are described for enabling the efficient fabrication of wedge-bonding of integrated circuit systems and electronic systems.

A low profile semiconductor package is disclosed including at least first and second stacked semiconductor die mounted to a substrate. The first semiconductor die may be electrically coupled to the substrate with a plurality of stitches in a forward ball bonding process. The second semiconductor die may in turn be electrically coupled to the first semiconductor die using a second set of stitches bonded between the die bond pads of the first and second semiconductor die. The second set of stitches may each include a lead end having a stitch ball that is bonded to the bond pads of the second semiconductor die. The tail end of each stitch in the second set of stitches may be wedge bonded directly to lead end of a stitch in the first set of stitches.

Methods and systems are described for enabling the efficient fabrication of wedge bonding of integrated circuit systems and electronic systems. In particular a reverse bonding approach can be employed.

A low profile semiconductor package is disclosed including at least first and second stacked semiconductor die mounted to a substrate. The first semiconductor die may be electrically coupled to the substrate with a plurality of stitches in a forward ball bonding process. The second semiconductor die may in turn be electrically coupled to the first semiconductor die using a second set of stitches bonded between the die bond pads of the first and second semiconductor die. The second set of stitches may each include a lead end having a stitch ball that is bonded to the bond pads of the second semiconductor die. The tail end of each stitch in the second set of stitches may be wedge bonded directly to lead end of a stitch in the first set of stitches.

The invention discloses a power cabinet with a fire extinguishing function, comprising a cabinet body, an electromagnet, a sleeve, a first movable rod, a second movable rod, a first wedging block, a second wedging block, a fixed plate, and a guide column and movable plate; when a fire occurs inside the cabinet, the electromagnet is energized through the action of the temperature sensor and the smoke sensor, and the second wedge-shaped block and the first wedge-shaped block are separated from each other through the attraction of the electromagnet to the iron block. At this time, due to the effect of the first coil spring, the movable plate moves down and resets. At this time, the first cooling hole and the second cooling hole no longer overlap, so that the outside air enters the cabinet, and at the same time the solenoid valve is opened, then The nitrogen in the nitrogen tank enters the cabinet, thereby reducing the oxygen in the cabinet rapidly, which has the effect of quickly extinguishing the fire. When the cabinet returns to normal, pull the movable plate upwards, and the first heat dissipation hole and the second heat dissipation hole overlap at this time , It is convenient for the usual ventilation inside the cabinet, and the operation is simple and fast.

The invention discloses a full-automatic wire bonder welding head which solves the problems that in wire wedge bonding, the micro-force output stability is poor and control regulation is difficult. The full-automatic wire bonder welding head comprises a motor fixing frame (19), a voice coil motor, an industrial control computer and a wire-bonding ultrasonic transducer; piezoelectric ceramic (10) is arranged at the right end of the wire-bonding ultrasonic transducer, the left end of the wire-bonding ultrasonic transducer is connected with a riving knife (11), a voice coil motor stator (6) is fixedly connected to the lower end face of a micro-force actuating mechanism installing plate (1) in an inverted and hung mode, an elastic deformation rectangle block (2) is connected between the micro-force actuating mechanism installing plate and a transducer installing sleeve (9), the top end face of a voice coil motor rotor (7) is connected with the top end face of the transducer installing sleeve in an abutted mode, and the piezoelectric ceramic, the voice coil motor and a position sensor (8) are all electrically connected with the industrial control computer together. In the whole pressure stroke, the full-automatic wire bonder welding head is stable and reliable in pressure control and good in repeatability.

The invention is aimed at providing a bonding structure of a copper-based bonding wire, realizing low material cost, high productivity in a continuous bonding in reverse bonding for wedge bonding on bumps, as well as excellent reliability in high-temperature heating, thermal cycle test, reflow test, HAST test or the like. The bonding structure is for connecting the bonding wire onto a ball bump formed on an electrode of a semiconductor device, the bonding wire and the ball bump respectively containing copper as a major component thereof. The bonding structure comprises a concentrated layer A provided at an interface of a bonding part of the ball bump and the bonding wire, wherein the concentration of a metal R other than copper in the concentrated layer A is not less than ten times the average concentration of the metal R in the ball bump; and a concentrated layer B provided at an interface of a bonding part of the ball bump and the electrode, wherein the concentration of the metal R in the concentrated layer B is not less than ten times the average concentration of the metal R in the ball bump.

The invention provides a lead bonding method for a lead frame plastically packaged in advance, and belongs to the technical field of packaging of chips. The lead bonding method is characterized in that by the lead bonding method, bonded balls are planted on second bonded spots in a pressure manner after the second bonded spots are formed in a wedge bonding manner. Inner lead feet bonded by the lead bonding method are high in bonding strength and good in reliability, and the lead bonding method is particularly applicable to lead bonding for lead frames plastically packaged in advance.

A gold alloy bonding wire for semiconductor device that attains collective improvement with respect to high strength/high elasticity for realizing narrow pitch bonding, stability of loop configuration, suppression of wire flowing, leaning property, bonding or fatigue characteristics at wedge bonded portions, etc. and excels in the suitability for industrial mass production; and a process for producing the same. With respect to the gold alloy bonding wire, in the crystal grain structure of longitudinal section of boding wire, the ratio of area of crystal grains exhibiting [111] orientation to area of crystal grains exhibiting [100] orientation among the crystal orientations in the longitudinal direction of wire is 1.2 or greater.

This invention is a method of fabricating a conformal lithium polymer battery comprising the steps of: selecting a slab of lithium polymer battery material of a desired height, containing a desired number of cells; freezing the slab; vertically cutting the slab to a desired shape; attaching a lead to each anode conductor; and attaching a lead to a each cathode conductor. The slab may contain one or many cells. The leads may be made of multistranded, metallic wire, metallic ribbon, low melting point alloy, self-healing metal, and litz wire. Attachment is accomplished so as to minimize tension on the leads. The cut slab may need to be deburred after cutting and before attaching leads. Preferably, burr formation is prevented by recessing the edge of the anodic or cathodic half cells. Lead attachment my be accomplished by: wire bonding; wedge bonding; adhesive bonding with conductive epoxy, anistotropic conductive adhesive or conductive thermoplastic; stapling; adhering the lead to the electrode by electropolymerization; welding; and growing a lead in place by electroless plating, electro-plating or a combination of electroless plating and electroplating. The distal ends of the leads may be connected together so that the cells are connected together in series, in parallel or some in series and the remainder in parallel. After the leads have been attached to the cut slab and connected together, the assembly will preferably be wrapped with standard packaging for lithium polymer batteries.

This invention provides a wire bonding method, comprising providing an integrated circuit (IC) die having thereon a passivation layer and a plurality of first bonding pads exposed by respective openings in the passivation layer; forming a polymer layer on the passivation layer; forming an adhesive/barrier layer on the polymer layer; forming a metal pad layer on the adhesive/barrier layer; bonding a wire onto the metal pad layer to form a ball bond thereon; and after forming the ball bond on the metal pad layer, running the wire so as to contact the wire with a second bonding pad and forming a wedge bond thereto.

The invention discloses a micro-wave low-band ultra-micro power combiner, which is characterized in that a circuit composition comprises power dividers with a tree structure, more than or equal to 2 of multi-channel balanced amplifiers, and combiners with a tree structure, wherein each balanced amplifier consists of an IC amplifying device and two 3dB quadrature bridges, the power dividers, the combiners, the 3dB quadrature bridges in the balanced amplifiers, and peripheral circuits of the IC amplifying devices in the balanced amplifiers are produced on a ceramic substrate, and the IC amplifying devices are fixed on the ceramic substrate through wedge bonding. Circuits of a radiofrequency power combiner are produced on the ceramic substrate, the IC amplifying devices are fixed on the ceramic substrate through wedge bonding, the circuits have good consistency and the power combiner has the advantages of high gain, high integration level, high efficiency, small volume and so on, and the power combiner, is suitable for mass production, greatly reduces production cost, and is suitable to be applied to base station transmitters and small whole machines in the field of microwave communication.

A low profile semiconductor package is disclosed including at least first and second stacked semiconductor die mounted to a substrate. The first and/or second semiconductor die may be fabricated with a plurality of redistribution pads formed over and electrically coupled to a plurality of bond pads. After the semiconductor die are formed and diced from the wafer, the die may be mounted to the substrate using a low profile reverse wire bond according to the present invention. In particular, a wedge bond may be formed between the wire and the redistribution pad without having to use a second wire bond ball on the die bond pad as in conventional reverse ball bonding processes.