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Gold alloy bonding wire for semiconductor device and process for producing the same

A connection wire and semiconductor technology, applied in the field of producing the connection wire

Active Publication Date: 2005-11-02
NIPPON STEEL CHEMICALL &MATERIAL CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Therefore, this is not possible with conventional simple materials design, such as by controlling the components and their concentrations

Method used

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  • Gold alloy bonding wire for semiconductor device and process for producing the same
  • Gold alloy bonding wire for semiconductor device and process for producing the same

Examples

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Effect test

Embodiment I

[0166] The connecting wires (1) to (14), (20) and (22) and their production methods (22) to (24) of the present invention will be described below by way of examples.

[0167] By using electrolytic gold with a gold purity of not less than about 99.995% by mass and adding necessary elements, melting and casting gold alloys having the chemical compositions shown in Tables 1 to 5 in a melting furnace, rolling the resulting ingot, heating The connecting wire of the present invention is produced by preheating in a furnace, drawing using a drawing die, and continuously scanning and heating the connecting wire through a post-heat treatment. The diameter of the final connecting wire is selected to be basically no greater than 20 microns.

[0168] The production steps will now be specifically described. First, an ingot with a diameter of 6 to 30 mm is prepared. In the rolling step, the cast ingot is rolled using thin rolls at a rate of 30 to 200 m / min until the connecting wire has a d...

Embodiment II

[0212] The connecting wires (15) to (21) of the present invention and their production methods (25) to (27) are described below by way of examples.

[0213] By using electrolytic gold with a gold purity of not less than about 99.995% by mass, melting and casting in a melting furnace containing one or more metals selected from the group consisting of Be, Ca, La, In, and Gd at a total concentration ranging from 0.0005 to 0.02% by mass , Nd, Ce, Dy, Tb, and Y elements; or a gold alloy containing one or more elements selected from Ag, Sn, Pb, Pt, and Cu at a total concentration in the range of 0.003 to 0.1% by mass , and then the obtained ingot is rolled, preheated in a heating furnace, stretched using a drawing die, and the connecting wire is continuously scanned and heated through post-heat treatment, thereby producing the connecting wire. Choose a final connecting wire diameter of 20 µm.

[0214] Tables 8 and 9 list the crystal orientation area ratios of the connecting wires a...

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Abstract

A gold alloy bonding wire for semiconductor device that attains collective improvement with respect to high strength / high elasticity for realizing narrow pitch bonding, stability of loop configuration, suppression of wire flowing, leaning property, bonding or fatigue characteristics at wedge bonded portions, etc. and excels in the suitability for industrial mass production; and a process for producing the same. With respect to the gold alloy bonding wire, in the crystal grain structure of longitudinal section of boding wire, the ratio of area of crystal grains exhibiting [111] orientation to area of crystal grains exhibiting [100] orientation among the crystal orientations in the longitudinal direction of wire is 1.2 or greater.

Description

technical field [0001] The present invention relates to a gold connection wire for a semiconductor device for connecting electrodes on a semiconductor element and external leads, and a method for producing the connection wire. Background technique [0002] Currently, connecting wires made of high-purity 4N-type gold (purity >99.99% by mass) and having a wire diameter of about 20 to about 50 microns are used to connect electrodes on semiconductor elements with external leads. A thermocompression bonding system combined with ultrasonic waves is generally used as a technique for connecting connecting wires, which requires conventional connecting devices and capillary clamps for inserting the connecting wires for the connection. One end of the connecting wire is heated and melted by arc heating to form a ball using surface tension, and the ball is crimped to the electrode of the semiconductor element heated at 150 to 300°C, and then, the connecting wire is directly bonded by ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/60
CPCH01L2924/01088H01L2224/48624H01L2924/01046H01L24/45H01L2924/01066H01L2924/0105H01L2924/01082H01L2924/01004H01L2224/05624H01L2224/4851H01L2924/01029H01L2924/01028H01L2924/014H01L2924/0107H01L2924/01013H01L2924/01064H01L2924/01065H01L2224/48599H01L2924/01047H01L2924/1433H01L2924/01079H01L2924/01061H01L2924/01063H01L2924/01033H01L2924/01006H01L2924/0106H01L2924/0102H01L2924/01078H01L2924/10253H01L2924/01014H01L2924/01057H01L2924/01052H01L2924/01058H01L2224/45144H01L24/43H01L2224/43H01L2224/45H01L2924/00011H01L2924/351H01L2924/01204H01L2924/01039H01L2924/01049H01L2924/00H01L2924/013H01L2924/00012
Inventor 宇野智裕寺岛晋一巽宏平
Owner NIPPON STEEL CHEMICALL &MATERIAL CO LTD
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