Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Conductive paste for positive electrode of solar cell as well as preparation method and application thereof

A technology for solar cells and conductive pastes, which is applied to equipment for manufacturing conductive/semiconductor layers, cable/conductor manufacturing, conductive materials dispersed in non-conductive inorganic materials, etc. The problems of sheet cutting process and tensile force can not meet the requirements, so as to avoid printing defects, improve printability and high battery conversion rate.

Active Publication Date: 2020-07-14
成都银盛新材料有限公司
View PDF4 Cites 2 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] After cutting with diamond wire, the surface of the cell is smoother, and there are obvious cutting lines on the surface of the silicon wafer after cutting. Using traditional slurry, not only the tensile force cannot meet the requirements, but also the printability requirements cannot meet the new silicon wafer cutting process.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Conductive paste for positive electrode of solar cell as well as preparation method and application thereof
  • Conductive paste for positive electrode of solar cell as well as preparation method and application thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0055] The conductive paste adopted in this embodiment adopts the following formula: 1.7% glass powder A, 1% glass powder B, 90% spherical silver powder, 2.2% organic vehicle, 3.65% diluent, 1.45% auxiliary agent, its specific formula composition As shown in Table 1.

[0056] Its preparation method specifically comprises the following steps:

[0057] A1) prepare glass powder A and glass powder B:

[0058] A11) According to the raw materials and ratios shown in Table 1, TeO 2 , PbO, Bi 2 o 3 , SiO 2 、WO 3 , ZnO, Al 2 o 3 , B 2 o 3 , CaO, Na 2 Mix O and MgO evenly, melt after heating, cool, ball mill, and sieve to obtain glass powder A. The D50 of the glass powder is preferably 1.8 μm.

[0059] A12) According to the raw materials and ratio shown in Table 1, TeO 2 、 Bi 2 o 3 、WO 3 , MgO, SiO 2 、Al 2 o 3 , Li 2 O, Na 2 O is mixed evenly, heated, melted, cooled, ball milled, and sieved to obtain glass powder B. The D50 of the glass powder is preferably 1.6 μm. ...

Embodiment 2

[0065] The conductive paste adopted in this embodiment adopts the following formula: 2% glass powder A, 0.2% glass powder B, 92% spherical silver powder, 1.5% organic vehicle, 3% diluent, 1.3% auxiliary agent, its specific formula composition As shown in Table 1. Its preparation method is basically the same as that of Example 1, so it will not be described in detail one by one.

Embodiment 3

[0067] The conductive paste adopted in this embodiment adopts the following formula: 2.1% glass powder A, 0.5% glass powder B, 85% spherical silver powder, 6% organic vehicle, 4.85% diluent, 1.55% auxiliary agent, its specific formula components As shown in Table 1. Its preparation method is basically the same as that of Example 1, so it will not be described in detail one by one.

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses conductive paste for a positive electrode of a solar cell. The conductive paste is added with glass powder A with the mass fraction of 1.7-4% and glass powder B with the mass fraction of 0.1-1%, wherein the glass transition temperature of the glass powder A is 250-350 DEG C, and the glass transition temperature of the glass powder B is 350-450 DEG C. The invention also discloses a preparation method of the conductive silver paste and a solar cell front electrode prepared by applying the conductive silver paste to a silicon wafer cut by a diamond wire. According to the conductive paste for the positive electrode of the solar cell, the glass powder A and the glass powder B with different glass softening temperatures are used as inorganic adhesives of the conductive paste; the bonding performance of the conductive slurry on the surface of a silicon wafer is improved, the degree of etching the surface of the silicon wafer by molten glass powder in the conductive slurry is improved, doping is improved, the ohmic contact of a metal-semiconductor contact layer on the surface of the silicon wafer is reduced, and the unit consumption ratio of a positive electrode ofa solar cell is reduced by 5-10%.

Description

technical field [0001] The invention relates to the technical field of conductive silver paste, in particular to a conductive paste for a front electrode of a solar cell, a preparation method and an application thereof. Background technique [0002] Since 2015, due to the introduction of silicon wafer end diamond wire slicing, the cost of single crystal has been reduced rapidly, so the market penetration rate has been rising, which has also put pressure on the majority of polycrystalline industry companies. Compared with the large-scale application of diamond wire cutting in the production of single crystal silicon wafers, the cutting of polycrystalline silicon is still dominated by mortar cutting. However, the application of diamond wire slicing in the polycrystalline field has been widely discussed in the industry. At present, the main obstacle of diamond wire slicing for polycrystalline silicon wafer cutting is that polycrystalline silicon wafers cut by diamond wire have...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): H01B1/16H01B1/22H01B13/00H01L31/0224C03C8/24
CPCC03C8/24H01B1/16H01B1/22H01B13/0026H01L31/022425Y02E10/50
Inventor 陈春锦
Owner 成都银盛新材料有限公司
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products