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Integrated Gan-based sensor and method for simultaneous monitoring of solution temperature and pH

A sensor and integrated technology, applied in thermometers, thermometers and instruments with directly sensitive electrical/magnetic components, etc., can solve the problems of high cost and difficult to achieve integration, and achieve improved detection sensitivity, high two-dimensional electronic Effect of Gas Channel Concentration

Active Publication Date: 2022-04-15
宁波铼微半导体有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Since metals may be corroded in acid-base solutions, noble metals are generally used as temperature sensors, resulting in high cost and difficult integration

Method used

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  • Integrated Gan-based sensor and method for simultaneous monitoring of solution temperature and pH
  • Integrated Gan-based sensor and method for simultaneous monitoring of solution temperature and pH
  • Integrated Gan-based sensor and method for simultaneous monitoring of solution temperature and pH

Examples

Experimental program
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Effect test

Embodiment 1

[0034] This embodiment provides a method for preparing an integrated GaN-based sensor for synchronous monitoring of solution temperature and pH, including the following steps:

[0035] S1: growing the stress buffer layer 2 and the GaN epitaxial layer 3 sequentially on the upper surface of the substrate layer 1 to obtain a sensor intermediate a; wherein the substrate layer 1 is a Si substrate, a sapphire substrate, a SiC substrate or a GaN substrate Any one of the self-supporting substrates; the stress buffer layer 2 is any one of AlN, AlGaN or GaN, or a combination of any two or more; and according to the difference in specifications, the thickness of the stress buffer layer 2 is between It can be adjusted between 0.01 and 100 μm; the GaN epitaxial layer is an unintentionally doped GaN epitaxial layer, and its dislocation density is 10 7 / cm 3 , the thickness of the GaN epitaxial layer can be adjusted between 0.1 and 100 μm;

[0036]S2: An AlGaN barrier layer 4 is grown on t...

Embodiment 2

[0039] This embodiment provides a method for preparing an integrated GaN-based sensor for synchronous monitoring of solution temperature and pH, including the following steps:

[0040] I: growing the stress buffer layer and the GaN epitaxial layer sequentially on the upper surface of the substrate layer to obtain a sensor intermediate a; wherein the substrate layer 1 is a Si substrate, a sapphire substrate, a SiC substrate or a GaN self-supporting substrate bottom; the stress buffer layer 2 is any one of AlN, AlGaN or GaN, or any combination of two or more; and according to the difference in specifications, the thickness of the stress buffer layer 2 is 0.01-100 μm can be regulated; the GaN epitaxial layer is an unintentionally doped GaN epitaxial layer, and its dislocation density is 10 8 / cm 3 , the thickness of the GaN epitaxial layer can be adjusted between 0.1 and 100 μm;

[0041] II: On the GaN epitaxial layer of the sensor intermediate a obtained in step I, an AlGaN ba...

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Abstract

The invention relates to an integrated GaN-based sensor and a manufacturing method for synchronously monitoring solution temperature and pH. The sensor is characterized in that it includes a substrate layer, a stress buffer layer, a GaN epitaxial layer, an AlGaN barrier layer, an ohmic contact electrode, a Schottky contact electrode and a packaging material layer arranged from bottom to top; the AlGaN barrier layer It includes a first protrusion, a first groove, a second protrusion and a second groove; the ohmic contact electrode is arranged on the surface of the first protrusion and the second protrusion; the Schottky contact electrode Deposition is disposed in the second groove. The sensor can maintain a high two-dimensional electron gas channel concentration while improving the detection sensitivity, so that the response speed is fast, and a Schottky diode is formed on the AlGaN / GaN by using the second groove anode structure to realize online monitoring of the detection solution temperature change.

Description

technical field [0001] The invention belongs to the field of semiconductor sensors, and in particular relates to an integrated GaN-based sensor and a manufacturing method for synchronously monitoring solution temperature and pH. Background technique [0002] In many industries such as environment, medical treatment, agriculture, food, industrial production, etc., pH measurement is necessary, but the method of detecting pH with chemical reagents is inconvenient and inaccurate, so pH sensors are necessary for modern accurate measurement of pH of liquid media device. [0003] For the traditional pH sensor, it is mainly integrated by adding an additional metal coil as a temperature sensor. Since metals may be corroded in acid-base solutions, noble metals are generally used as temperature sensors, resulting in high cost and difficult integration. Contents of the invention [0004] In order to solve the problems in the prior art, the invention provides an integrated GaN-based ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G01N27/00G01K7/01
CPCG01N27/00G01K7/015
Inventor 李柳暗敖金平
Owner 宁波铼微半导体有限公司
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