Chemical mechanical polishing agent kit and chemical mechanical polishing method using the same
Patent Information
- Authority / Receiving Office
- US · United States
- Current Assignee / Owner
- JSR CORPORATIOON
- Publication Date
- 2004-12-02
- Estimated Expiration
- Not applicable · inactive patent
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Abstract
Description
[0001] The present invention relates to a chemical mechanical polishing agent kit comprising a chemical mechanical polishing aqueous dispersion containing abrasive grains and a chemical mechanical polishing aqueous composition containing an organic compound having a heterocyclic ring.
[0002] With densification of semiconductor devices, wirings formable in the devices have been made finer recently. Exemplary technologies capable of attaining much finer wirings include the damascene method. This method comprises steps of filling a trench or the like formed in an insulating substrate with a wiring material, and then removing an excess wiring material by chemical mechanical polishing to form desired wiring.
[0003] In the conventional chemical mechanical polishing, if wiring is formed by, for example, copper as a wiring material, the copper wiring portion is excessively polished and hence the copper wiring portion sometimes becomes concave. Such concave curve of the wiring is called "dishi...