Chemical mechanical polishing agent kit and chemical mechanical polishing method using the same

Inactive Publication Date: 2004-12-02
JSR CORPORATIOON
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Benefits of technology

0018] The chemical mechanical polishing agent kit of the present invention and the chemical mechanical polishing method using the kit can inhibit increase of dishing and occurrence of corrosion during the over-polishing and can prevent lowering of the yield.
0019] FIG. 1 is a group of views showing exemplary steps of a chemical mechanical polishing method according to the

Problems solved by technology

In the conventional chemical mechanical polishing, if wiring is formed by, for example, copper as a wiring material, the copper wiring portion is excessively polished and hence the copper wiring portion sometimes becomes concave.
Such concave curve of the wiring is called "dishing" or "erosion", and this causes the yield loss of semiconductor devices.
If such a remainder is present, copper sometimes remains on the surface of the insulating substrate even after the barrier metal polishing, and this ca

Method used

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  • Chemical mechanical polishing agent kit and chemical mechanical polishing method using the same
  • Chemical mechanical polishing agent kit and chemical mechanical polishing method using the same
  • Chemical mechanical polishing agent kit and chemical mechanical polishing method using the same

Examples

Experimental program
Comparison scheme
Effect test

preparation example 1

[0086] (Preparation of Fumed Silica Particle-Containing Aqueous Dispersion)

[0087] 100 Parts by weight of fumed silica particles (available from Nippon Aerosil Co., Ltd., trade name: AEROSIL #90) were dispersed in 900 parts by weight of ion-exchanged water by means of an ultrasonic dispersing machine, and the resulting dispersion was filtered through a filter having a pore size of 5 .mu.m to prepare an aqueous dispersion (1) containing 10% by weight of fumed silica particles.

preparation example 2

[0088] (Preparation of Colloidal Silica-Containing Aqueous Dispersion)

[0089] In a 2-liter flask, 70 parts by weight of ammonia water having a concentration of 25% by weight, 40 parts by weight of ion-exchanged water, 175 parts by weight of ethanol and 21 parts by weight of tetraethoxysilane were poured, and they were heated to 60.degree. C. with stirring at 180 rpm. At this temperature, stirring was continued for 2 hours, and then cooling was achieved to obtain an alcohol dispersion containing colloidal silica having an average particle diameter of 97 nm. Then, from the dispersion, an alcohol was removed by means of an evaporator with adding ion-exchanged water at 80.degree. C. This operation was repeated several times to sufficiently remove an alcohol from the dispersion. Thus, an aqueous dispersion (2) containing 10% by weight of colloidal silica having an average particle diameter of 97 nm was prepared.

preparation example 3

[0090] (Preparation of Aqueous Dispersion Containing Abrasive Grains Comprising Composite Particles)

[0091] In a 2-liter flask, 90 parts by weight of methyl methacrylate, 2 parts by weight of methoxypolyethyleneglycol methacrylate (available from Shin-nakamura Chemical Co., Ltd., trade name: NK ester M-90G #400) 5 parts by weight of 4-vinylpyridine, 2 parts by weight of an azo type polymerization initiator (available from Wako Pure Chemical Industries, Ltd., trade name: V50) and 400 parts by weight of ion-exchanged water were placed, and they were heated to 70.degree. C. with stirring in a nitrogen gas atmosphere. At this temperature, polymerization was performed for 6 hours to obtain an aqueous dispersion containing polymethyl methacrylate particles having an average particle diameter of 150 nm, wherein the particles have a functional group having a cation of an amino group and a polyethylene glycol chain. The polymerization yield was 95%. In a 2-liter flask, 100 parts by weight of ...

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Abstract

A chemical mechanical polishing method of the present invention comprises conducting polishing by the use of a chemical mechanical polishing aqueous dispersion (A) containing abrasive grains and then conducting polishing by the use of a chemical mechanical polishing aqueous composition (B) containing at least one organic compound having a heterocyclic ring in addition to the chemical mechanical polishing aqueous dispersion (A). Also A chemical mechanical polishing agent kit of the present invention comprises the chemical mechanical polishing aqueous dispersion (A) and the chemical mechanical polishing aqueous composition (B). The polishing method and the polishing agent kit can prevent an increase of dishing and corrosion of wiring portion to enhance the yield.

Description

[0001] The present invention relates to a chemical mechanical polishing agent kit comprising a chemical mechanical polishing aqueous dispersion containing abrasive grains and a chemical mechanical polishing aqueous composition containing an organic compound having a heterocyclic ring.[0002] With densification of semiconductor devices, wirings formable in the devices have been made finer recently. Exemplary technologies capable of attaining much finer wirings include the damascene method. This method comprises steps of filling a trench or the like formed in an insulating substrate with a wiring material, and then removing an excess wiring material by chemical mechanical polishing to form desired wiring.[0003] In the conventional chemical mechanical polishing, if wiring is formed by, for example, copper as a wiring material, the copper wiring portion is excessively polished and hence the copper wiring portion sometimes becomes concave. Such concave curve of the wiring is called "dishi...

Claims

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Application Information

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IPC IPC(8): B24D3/20C09G1/02C09K3/14H01L21/321
CPCH01L21/3212C09G1/02B24D3/20C09K3/14
Inventor SHIDA, HIROTAKAKONNO, TOMOHISAHATTORI, MASAYUKIKAWAHASHI, NOBUO
Owner JSR CORPORATIOON
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