Provided is a method of fabricating, with satisfactory adhesion, a thin film of a
metal or a metallic-compound, such as a
metal oxide or
nitride, on a substrate made of a high-melting-point material such as
silicon or ceramics by using a
metal or metallic-compound target as the primary
raw material so as to eliminate the necessity of using harmful gases such as organometallic gas, and by using an atmospheric-pressure
plasma generated under
atmospheric pressure as a
reaction field and also as a heat source. Additionally provided is an apparatus for fabricating the thin film. The thin-film fabrication method by
microplasma processing includes the steps of disposing a
raw material for thin-film fabrication in one or more tubes (A) having a uniform inner
diameter throughout, introducing an
inert gas and applying a high-frequency
voltage to the narrow tubes (A) to generate high-frequency
plasma in the narrow tubes (A), heating / evaporating the
raw material while maintaining the flow rate of the
plasma gas in the narrow tubes (A) and maintaining the plasma gas temperature high, ejecting the evaporated material from the narrow tubes (A) to spray it onto the substrate, heating the substrate with the plasma, and depositing the sprayed material on the substrate under
atmospheric pressure.