Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Film formation method and storage medium

Inactive Publication Date: 2011-07-21
TOKYO ELECTRON LTD
View PDF2 Cites 5 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Benefits of technology

[0005]Accordingly, an objective of the present invention is to provide a film formation method for forming a Cu film having high uniformity and high adhesion on a Co seed by preventing Co from being eluted when a Cu film is to be formed using Co as a plating seed by electroplating.

Problems solved by technology

However, since Co is soluble in a sulfuric acid, if the Co is used as a plating seed, the Co is eluted into the plating solution.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Film formation method and storage medium
  • Film formation method and storage medium
  • Film formation method and storage medium

Examples

Experimental program
Comparison scheme
Effect test

embodiments

[0054]Next, embodiments will be explained.

[0055]A sample in which a Co film was formed as a plating seed to a thickness of 10 nm on a substrate and two samples in each of which a Co film was formed as a plating seed to a thickness of 5 nm on a substrate were prepared. First, no voltage was applied to the sample in which the Co film was formed to the thickness of 10 nm and one of the samples in which the Co film was formed to the thickness of 5 nm before the samples were dipped in plating solutions, and Cu films are formed by electroplating. Also, a voltage of −20 V was applied to the other sample in which the Co film was formed to the thickness of 5 nm before the sample was dipped in a plating solution, thereby a Cu film is formed by electroplating.

[0056]FIG. 7 are photographs showing plating states of the samples as time passes. As shown in FIG. 7, it was found that in the sample in which the Co film was formed to the thickness of 10 nm, the Cu film was formed satisfactorily althou...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
Thicknessaaaaaaaaaa
Electric potential / voltageaaaaaaaaaa
Surface potentialaaaaaaaaaa
Login to View More

Abstract

A film formation method includes preparing a substrate formed a Co film as a seed layer on a surface of the substrate, applying a negative voltage to the substrate such that a surface potential of Co is lower than an oxidation potential of the Co, and in a state when the negative voltage is applied to the substrate, dipping the Co film in a plating solution mainly containing copper sulfate solution, thereby a Cu film is formed on the Co film of the substrate by electroplating.

Description

TECHNICAL FIELD[0001]The present invention relates to a film formation method for forming a Cu film on a Co seed by electroplating, and a storage medium.BACKGROUND ART[0002]Recently, as semiconductor devices have higher speed and wiring patterns get smaller, Cu having higher conductivity than Al and also having high electromigration resistance and the like has been in the spotlight as the wiring. Conventionally, a Cu wiring layer has been formed by electroplating, and Cu has been used as a seed of Cu wiring formed by electroplating. However, as wiring patterns get smaller, better embedding characteristic is required. Accordingly, studies have been made to use Co instead of Cu, which has been conventionally used, because Co has good embedding characteristic. Also, Co has the advantages of low resistance and high adhesion to Cu.[0003]However, when a Cu film is formed by electroplating, a copper sulfate has been conventionally used as a plating solution. However, since Co is soluble in...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): C23C28/02
CPCC25D3/38C25D5/34H01L21/28556C25D17/001H01L21/76873C25D7/123H01L21/2885C25D5/18C25D21/12C25D5/04
Inventor KOJIMA, YASUHIKOAZUMO, SHUJI
Owner TOKYO ELECTRON LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com