Film formation method and storage medium

Inactive Publication Date: 2011-07-21
TOKYO ELECTRON LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Benefits of technology

[0005]Accordingly, an objective of the present invention is to provide a film formation method for forming a Cu film having high uniformity a

Problems solved by technology

However, since Co is soluble in a sulfuric acid, if the Co is us

Method used

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  • Film formation method and storage medium
  • Film formation method and storage medium
  • Film formation method and storage medium

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[0018](Mode for Carrying Out the Invention)

[0019]Hereinafter, embodiments of the present invention will be explained with reference to the attached drawings.

[0020]

[0021]FIG. 1 is a schematic cross-sectional view showing an embodiment of a film formation apparatus for performing a film formation method according to the present invention. The film formation apparatus is constituted as an impregnation-type electroplating apparatus for forming a Cu film by electroplating.

[0022]The film formation apparatus 100 includes a support member 1 which holds a semiconductor wafer (hereinafter simply referred to as a wafer) W, which is a substrate to be processed, on a surface of which a Co film is formed as a seed layer. The support member 1 is rotatable by a rotating device (not shown), and the wafer W is rotated in a plane by rotating the support member 1. An edge seal member 2 having a cylindrical shape is liquid sealed with respect to the wafer W along an edge of a top surface of the wafer W ...

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Abstract

A film formation method includes preparing a substrate formed a Co film as a seed layer on a surface of the substrate, applying a negative voltage to the substrate such that a surface potential of Co is lower than an oxidation potential of the Co, and in a state when the negative voltage is applied to the substrate, dipping the Co film in a plating solution mainly containing copper sulfate solution, thereby a Cu film is formed on the Co film of the substrate by electroplating.

Description

TECHNICAL FIELD[0001]The present invention relates to a film formation method for forming a Cu film on a Co seed by electroplating, and a storage medium.BACKGROUND ART[0002]Recently, as semiconductor devices have higher speed and wiring patterns get smaller, Cu having higher conductivity than Al and also having high electromigration resistance and the like has been in the spotlight as the wiring. Conventionally, a Cu wiring layer has been formed by electroplating, and Cu has been used as a seed of Cu wiring formed by electroplating. However, as wiring patterns get smaller, better embedding characteristic is required. Accordingly, studies have been made to use Co instead of Cu, which has been conventionally used, because Co has good embedding characteristic. Also, Co has the advantages of low resistance and high adhesion to Cu.[0003]However, when a Cu film is formed by electroplating, a copper sulfate has been conventionally used as a plating solution. However, since Co is soluble in...

Claims

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Application Information

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IPC IPC(8): C23C28/02
CPCC25D3/38C25D5/34H01L21/28556C25D17/001H01L21/76873C25D7/123H01L21/2885C25D5/18C25D21/12C25D5/04
Inventor KOJIMA, YASUHIKOAZUMO, SHUJI
Owner TOKYO ELECTRON LTD
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