Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Film material for high-sensitivity metal Hall sensor and preparation method of film material

A technology of Hall sensor and thin-film material, which is applied in the field of metal magnetic field sensor thin-film material and its preparation, can solve the problems such as weak Hall signal, achieve the effect of improving magnetic field sensitivity, obvious magnetic field sensitivity, and improving Hall signal

Inactive Publication Date: 2012-12-26
UNIV OF SCI & TECH BEIJING
View PDF0 Cites 2 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the Hall signal of this system is not strong, and its Hall resistivity is only 0.6μΩ·cm
If the Hall signal can be improved while maintaining the adjustable anisotropy, the sensitivity of the metal Hall sensor will have a greater leap

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Film material for high-sensitivity metal Hall sensor and preparation method of film material
  • Film material for high-sensitivity metal Hall sensor and preparation method of film material
  • Film material for high-sensitivity metal Hall sensor and preparation method of film material

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0021] Magnetic thin films were prepared in a magnetron sputtering apparatus. First, the single crystal silicon substrate is ultrasonically cleaned with an organic chemical solvent and deionized water, and then placed on a sample base in a vacuum sputtering chamber. The substrate is cooled with circulating water. Background vacuum 1×10 during sputtering -5 Pa, sequentially deposited under the condition of argon gas (purity 99.99%) at a pressure of 0.2Pa as well as Films were produced. Then, the thin film material is processed into a Hall resistance bar element with a line width of 30 microns through the general semiconductor processing technology; the general semiconductor processing technology refers to: glue removal, exposure, development, film hardening, etching, etc.

[0022] figure 1 It is a schematic diagram of the structure of the Hall resistance strip. figure 2 It is the Hall signal output curve of this film material measured by the standard four-probe met...

Embodiment 2

[0024] Magnetic thin films were prepared in a magnetron sputtering apparatus. First, the single crystal silicon substrate is ultrasonically cleaned with an organic chemical solvent and deionized water, and then placed on a sample base in a vacuum sputtering chamber. The substrate is cooled with circulating water. Background vacuum 1×10 during sputtering -5 Pa, the deposition structure is (t takes 5 respectively, ) series of films. Then, the thin film material is processed into a Hall resistance bar element with a line width of 30 microns through the general semiconductor processing technology; the general semiconductor processing technology refers to: glue removal, exposure, development, film hardening, etching, etc.

[0025] image 3 It is a series of thin film materials with the above structure designed and processed into the Hall signal output curve of the Hall resistance strip element; it can be seen that by optimizing the thickness of the insulating layer, Hall sen...

Embodiment 3

[0027] Magnetic thin films were prepared in a magnetron sputtering apparatus. First, the single crystal silicon substrate is ultrasonically cleaned with an organic chemical solvent and deionized water, and then placed on a sample base in a vacuum sputtering chamber. The substrate is cooled with circulating water. Background vacuum 1×10 during sputtering -5 Pa, the deposition structure is (n takes 2-10) and the structure is (n takes 2-10) series of films. Then, the thin film material is processed into a Hall resistance bar element with a line width of 30 microns through the general semiconductor processing technology; the general semiconductor processing technology refers to: glue removal, exposure, development, film hardening, etching, etc.

[0028] Figure 4 It is a series of thin film materials with the above structure designed and processed into a curve of the magnetic field sensitivity of the Hall resistance bar element changing with the number of cycles n. It ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The design content of the invention discloses a film material for a high-sensitivity metal Hall sensor and a preparation method of the film material, relating to magnetic film materials. The film material disclosed by the invention is in a structure as follows: an insulating layer / Pt1 / [ Co / Pt2]n / insulating layer. The material with the structure has very strong Hall signals, and is processed into magnetic-field sensor elements with very high magnetic-field sensitivity by optimizing thicknesses of all layers. The film material for the high-sensitivity metal Hall sensor has the main advantages that the preparation technique for the designed material is simple, the magnetic field sensing range is large, the magnetic field sensitivity is obviously improved, the optimized magnetic field sensitivity is higher than the sensitivity of the currently-reported highest metal Hall sensor, the resistivity is low, the response frequency is wide, and simultaneously the defects that the Hall signal is low and anisotropy is not easy to adjust in the conventional material system are overcome. Therefore, the material can be used for manufacturing the high-sensitivity metal Hall sensor.

Description

technical field [0001] The invention relates to a magnetic film material, in particular to a metal magnetic field sensor film material with anomalous Hall effect and a preparation method thereof. Background technique [0002] Magnetic metal materials with abnormal Hall effect (EHE) can be used in magnetic measurement, making magnetic recording media and magnetic field sensors and other application devices. Due to the low resistivity, wide response frequency, low temperature coefficient and simple fabrication process of metal Hall sensors, magnetic metal Hall sensors with EHE are gradually showing a tendency to replace semiconductor Hall sensors. However, for an excellent magnetic sensor, a high magnetic field sensitivity (dV xy / dH) is the most important indicator. In order to obtain high sensitivity, materials with large Hall signal or low hard-axis saturation field are required. However, materials with very large Hall signals tend to have large saturation fields. For e...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): H01L43/10H01L43/06H01L43/14H10N52/00H10N52/01
Inventor 张石磊滕蛟于广华
Owner UNIV OF SCI & TECH BEIJING
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com