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Perovskites semimetal composite multilayer membrane prepared by one ingredient and use thereof

A composite multilayer film and perovskite technology, which is applied in the direction of metal layered products, layered products, chemical instruments and methods, etc., can solve the problems of unfavorable device applications, low tunneling magnetoresistance ratio, etc., and achieve good crystal Grid matching, high tunneling magnetoresistance ratio, and improved device performance

Inactive Publication Date: 2006-09-06
INST OF PHYSICS - CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] The purpose of the present invention is to overcome the defects that the perovskite semi-metallic composite multilayer film prepared in the prior art has diffusion between the interfaces, resulting in a low tunneling magnetoresistance ratio, which is not conducive to the application of practical devices, thereby providing an adjacent The material layers have good lattice matching, extremely small interfacial stress, and a good interfacial layered structure, which can ensure high-quality barrier layers and barrier interfaces, making it a component with a high tunneling magnetoresistance ratio Modulated perovskite semimetal composite multilayer film, and its application

Method used

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  • Perovskites semimetal composite multilayer membrane prepared by one ingredient and use thereof
  • Perovskites semimetal composite multilayer membrane prepared by one ingredient and use thereof
  • Perovskites semimetal composite multilayer membrane prepared by one ingredient and use thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1～12

[0022] Select ferromagnetic metal oxide La with Sr composition range of 0.161-x Sr x MnO 3 (FM) As a semi-metallic ferromagnetic layer, La with a Sr composition range of 01-y Sr y MnO 3 (I) as an insulator barrier layer. The method of magnetron sputtering chemical reaction deposition and heat treatment in (001) oriented SrTiO 3 A series of perovskite semimetal composite four-layer films modulated by the strontium composition of the present invention were prepared on the single crystal substrate—La 1-x Sr x MnO 3 (FM1) / La 1-y Sr y MnO 3 (I) / La 1-x Sr x MnO 3 (FM2) (wherein, 0.161-x Sr x MnO 3 (FM1) / La 1-y Sr y MnO 3 (I) / La 1-x Sr x MnO 3 (FM2), and using the same method of preparing the device to prepare a four-layer core structure as AFM / La 1-x Sr x MnO 3 (FM1) / La 1-y Sr y MnO 3 (I) / La 1-x Sr x MnO 3 (FM2) (wherein, 0.16<x<1.0, 0<y<0.16) single barrier composite magnetic tunnel junction. Its composition and properties are listed in Table 1.

[002...

Embodiment 13～24

[0027] Same as Examples 1-12, select ferromagnetic metal oxide La with Sr composition range of 0.161-x Sr x MnO 3 (FM) As a semi-metallic ferromagnetic layer, La with a Sr composition range of 01-y Sr y MnO 3 (I) as an insulator barrier layer. And a series of perovskite semimetal composite seven-layer films modulated by the strontium composition of the present invention can be prepared by using the same method for preparing devices——AFM1 / La with the same material composition strontium 1-x Sr x MnO 3 (FM1) / La 1-y Sr y MnO 3 (I1) / La 1-x Sr x MnO 3 (FM2) / La 1-y Sr y MnO 3 (I2) / La 1-x Sr x mn 3 (FM3) / AFM2 (wherein, 0.16<x<1.0, 0<y<0.16) is a perovskite oxide double-barrier composite magnetic tunnel junction with a core structure. Its composition and properties are listed in Table 2.

[0028] In this double-barrier composite magnetic tunnel junction, the first and second antiferromagnetic pinning layers (AFM1 and AFM2) have a pinning effect; the magnetization dire...

Embodiment 25～33

[0032] Similar to Examples 1-12, the ferromagnetic metal oxide La with a Ca composition range of 0.181-x Ca x MnO 3 As a half-metal ferromagnetic layer (FM), choose La with a Ca composition range of 01-y Ca y MnO 3 As an insulator barrier layer (I); and using the preparation method of the composite multilayer film device in Examples 1 to 12, a series of calcium component-modulated perovskite semimetal composite four-layer films of the present invention—with the same The four-layer core structure of the composite multilayer film with a material composition of calcium is La 1-x Ca x MnO 3 (FM1) / La 1-y Ca y MnO 3 (I) / La 1-x Cax MnO 3 (FM2) / AFM (wherein, 0.181-x Ca x MnO 3 (FM1) / La 1-y Ca y MnO 3 (I) / La 1-x Ca x MnO 3 (FM2) single-barrier composite magnetic tunnel junction. Its composition and properties are listed in Table 3.

[0033] Reality

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Abstract

The invention relates to a component modulated perovskite semi-metallic composite multilayer film and relative application. Wherein the core of composite multilayer film is FM1 / I / FM2 / AFM, AFM / FM1 / I / FM2 or AFM1 / FM1 / I1 / FM2 / I2 / FM3 / AFM2, while all semi-metallic iron magnetic layers that FM1, FM2 and FM3, and the insulated barrier layer that I, I1, and I2 are all the perovskite oxide film; said perovskite oxide is Al-xBxMo3, while A is selected from one or several of 57-71 elements; B is one or several of alkali or alkali earth metals; M is selected from one or several of 22-30, 40-51 and 73-80 elements. The nearby material layers of said composite multilayer film has better lattice matching property, less interface stress, better layered structure, and high tunnel magnetic resistance, which can be used in magnetic sensitive, electric sensitive, optical sensitive and gas sensitive sensor, magnetic random memory and other self-rotational electric devices.

Description

technical field [0001] The invention relates to a composite multilayer film and its application, in particular to a composition-modulated perovskite semimetal composite multilayer film and its application in devices. Background technique [0002] Since Julliére discovered the Tunnel Magnetoresistance (TMR) effect in Fe / Ge / Co sandwich structure composite (magnetic material / insulator or semiconductor / magnetic material) multilayer film in 1975, a series of FM / I (S) / FM composite multilayer films have been studied extensively and systematically. In the FM / I(S) / FM composite multilayer film shown in Figure 1, FM represents a ferromagnetic metal or semi-metal layer, and I(S) represents an insulator (or semiconductor) barrier layer. Studies have found that this kind of composite multilayer film has the characteristics of low saturation magnetic field and small coercive force, and can be applied to magnetic sensors, magnetic random access memory (MRAM) memory cells and other spintron...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): B32B15/01
Inventor 丰家峰韩秀峰詹文山杜永胜严辉于敦波张国成
Owner INST OF PHYSICS - CHINESE ACAD OF SCI
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