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77 results about "Interfacial stress" patented technology

Method for direct bonding two silicon wafers for minimising interfacial oxide and stresses at the bond interface, and an SOI structure

A semiconductor substrate (1) comprises first and second silicon wafers (2,3) directly bonded together with interfacial oxide and interfacial stresses minimised along a bond interface (5), which is defined by bond faces (7) of the first and second wafers (2,3). Interfacial oxide is minimised by selecting the first and second wafers (2,3) to be of relatively low oxygen content, well below the limit of solid solubility of oxygen in the wafers. In order to minimise interfacial stresses, the first and second wafers are selected to have respective different crystal plane orientations. The bond faces (7) of the first and second wafers (2,3) are polished and cleaned, and are subsequently dried in a nitrogen atmosphere. Immediately upon being dried, the bond faces (7) of the first and second wafers (2,3) are abutted together and the wafers (2,3) are subjected to a preliminary anneal at a temperature of at least 400° C. for a time period of a few hours. As soon as possible after the preliminary anneal, and preferably, within forty-eight hours of the preliminary anneal, the first and second wafers (2,3) are fusion bonded at a bond anneal temperature of approximately 1,150° C. for a time period of approximately three hours. The preliminary anneal may be omitted if fusion bonding at the bond anneal temperature is carried out within approximately six hours of the wafers (2,3) being abutted together. An SOI structure (50) may subsequently be prepared from the semiconductor structure (1) which forms a substrate layer (52) supported on a handle layer (55) with a buried insulating layer (57) between the substrate layer (52) and the handle layer (55).
Owner:ANALOG DEVICES INC

Artificial half pelvic prosthesis with support structure

InactiveCN102048598ALong-term steady decreasePrevent looseningJoint implantsAcetabular cupsNeurovascular injuryProsthesis
The invention discloses an artificial half pelvic prosthesis with a support structure, comprising an ilium side prosthesis and an acetabulum side prosthesis which are provided with a plurality of bolt holes, and a hook-like support structure arranged at the sacrum part justly is arranged at the edge end of the ilium side prosthesis; the ilium side prosthesis is hemispherical, an extension arm is arranged inwards, and a hook-like support structure arranged below the public rami at the same side or the opposite side is arranged at the tail end below the arm. In the invention, by adopting the support structure, interfacial stress between the prosthesis and the residual pelvis is converted into pressure stress from shearing or tensile stress, so as to improve the stability of the prosthesis. Moreover, a special inserted support structure or an inserted intramedullary stem structure is adopted at the connecting part of the prosthesis and a horizontal ramus of pubis, more femoral blood vessels and nerves on the surface are not needed to be exposed in the operation, the inserted type support structure or the intramedullary stem is directly inserted in the stump of the horizontal ramus of pubis, so as to simplify the operation and reduce risks of bleeding and injuring vital nerves and blood vessels.
Owner:SHANGHAI NINTH PEOPLES HOSPITAL AFFILIATED TO SHANGHAI JIAO TONG UNIV SCHOOL OF MEDICINE

Corrosion-resistant dual metal clad tube blank and manufacturing method thereof

A manufacturing method of a corrosion-resistant dual metal clad tube blank comprises the following steps: outer-layer molten metal is pumped into a pipe die for centrifugal pouring, the molten metal is cooled after pouring, and inner-layer molten metal is poured when internal surface temperature of the outer layer is cooled to be lower than 50-70 DEG C which is the melting point of the outer-layer molten metal; inner-layer molten metal is pumped into the pipe die for centrifugal pouring, the molten metal is cooled after pouring; cooling is stopped after the outer layer and the inner layer are completely solidified, at the moment, the inner layer and the outer layer achieve complete metallurgical bonding; wherein, the outer layer is made of X52 or X60 steel and the inner layer is made of 825 steel. A metallurgical bonding layer of a production tube obtained by carrying out extrusion or hot rolling on the tube blank manufactured by the method is several times or dozens of times as thick as a bonding layer of the dual metal tube obtained by the explosive welding process; the transition of the ingredients on the inner and outer layers is gentle, thus greatly relieving the interfacial stress between the inner layer and the outer layer, facilitating the inner layer and the outer layer not to be layered easily, improving the safety of the use of the production tube and prolonging the service life of the production tube.
Owner:HANDAN XINXING SPECIAL TUBING CO LTD

Semi-pelvic prosthesis

The invention belongs to the technical field of designing and manufacturing of prosthesis and relates to semi-pelvic prosthesis. The semi-pelvic prosthesis is characterized by being formed by connecting an ilium fixing part, acetabulum prosthesis, and a pubis connection part, wherein the ilium fixing part is used for being connected and fixed with a residual iliac wing and sacrum; the pubis connection part is used for being connected and fixed with the residual pubis on the same side or pubis on an opposite side; the ilium fixing part and the acetabulum prosthesis are connected by a tapered rotation prevention clamp port; and the acetabulum prosthesis and the pubis connection part are fixed and connected by a bolt. The semi-pelvic prosthesis has the advantages that (1) compared with assembled prosthesis, hot bending forming integrated prosthesis is disperse in stress; (2) the semi-pelvic prosthesis and the residual iliac wing are fixed by a self-locking nail, and the sacrum and the residual pubis are fixed by a self-locking nail, so that loosening of the bolt can be effectively prevented; and (3) the semi-pelvic prosthesis is provided with a flat supporting structure, so that the interfacial stress between the prosthesis and the sacrum, and between the prosthesis and the pubis can be converted from shear force or tensile stress into pressure stress, the loosening or displacement of the prosthesis is prevented, the long-term stability of the prosthesis is facilitated, and the prosthesis cannot be broken easily when complex force is applied to a human body for a long time.
Owner:THYTEC SHANGHAI

In-situ non-crystallizing modification method for surface of metal material

The invention belongs to the technical field of modification of surfaces of metal materials, and discloses an in-situ non-crystallizing modification method for the surface of a metal material. The method comprises the steps that amorphous alloy components matched with components of a metal matrix material are selected based on the components of the metal matrix material; then, required simple-substance element powder except main elements of a metal matrix is matched according to the amorphous alloy components; after being mixed, the element powder is preplaced on the surface of the metal matrix; laser is adopted to directly irradiate the mixed powder and the metal matrix to melt the mixed powder and the metal matrix and mix the melts; and an amorphous alloy is generated through the in-situ alloying reaction of the mixed element powder and the main elements of the metal matrix under the condition of quick cooling, and an amorphous alloy surface is prepared. According to the method, the interfacial stress of the amorphous alloy surface and the metal matrix is effectively reduced, the thickness of the amorphous alloy surface is increased, and the surface performance of the metal material is remarkably improved; and the amorphous alloy surface prepared through the method is different from an amorphous alloy coating prepared through a traditional method, the amorphous alloy surface is generated through the in-situ alloying reaction on the surface of the metal matrix, the interface bonding is high, and the performance is excellent.
Owner:常熟市大地机械铸造厂

Preparation method of high-performance doping strontium titanate oxide thermoelectric film

ActiveCN106784279AIncreased Seebeck coefficientImprove the Seebeck coefficientThermoelectric device manufacture/treatmentThermoelectric device junction materialsSingle crystalFilm material
The invention discloses a preparation method of a high-performance doping strontium titanate perovskite oxide thermoelectric film. The method is characterized in that epitaxial coherent growth of a doping strontium titanate film material on the surface of an oxide monocrystal substrate which has the same lattice body structure and an unmatched parameter compared with the film material is realized by controlling a plasma property and a substrate condition; and an interfacial stress field is generated. A crystal structure property, an electronic structure property and a polarization characteristic of the film material, and an interfacial property between the film material and the substrate are adjusted by the stress field and the lattice distortion degree of the film material, so that thermoelectric transmission properties of the material such as conductivity and a seebeck coefficient are greatly improved. A room-temperature thermoelectric power factor of the prepared doping strontium titanate film material is 50-10000mnW/(cm*K<2>). The high-performance doping strontium titanate film material prepared by the method can be further applied to design and preparation of a thermoelectric device, so that the thermal and electric energy conversion efficiency of the prepared thermoelectric device during realization of functions such as temperature difference power generation, refrigeration and temperature sensing can be greatly improved.
Owner:UNIV OF SCI & TECH BEIJING +1

Nitriding PVD composite coating and preparation method thereof

The invention discloses a nitriding PVD (Physical Vapor Decomposition) composite coating and a preparation method thereof. The internal structure of a diffusion layer comprises a nitrogen-containing oversaturated martensitic structure, a metal nitrogen compound, a metal carbon compound and Fe4N phase; the internal structure of a compound layer comprises Fe4N phase of a face-centered cubic structure, CrN phase of the face-centered cubic structure, and Fe2-3N phase of a close-packed hexagonal structure; the internal structure of a PVD hard film layer mainly comprises fcc-(Cr, Al)N phase of the face-centered cubic structure and further comprises a small number of hcp-AlN phase of the close-packed hexagonal structure, and fcc-(Ti, Al)N phase of the face-centered cubic structure. With the adoption of the reasonable technologic optimization and adjustment and control of the structure, the decomposition of the compound layer can be inhibited; the Fe4N phase and the CrN phase in the compound layer become nucleation particles for phase epitaxial growth of the PVD hard film, so as to obviously increase the film-matrix binding force; the compound layer provides powerful support for the PVD hard film; moreover, the compound layer enables the stress on the film-matrix interface to be continuously changed, so as to improve the interfacial stress concentration situation, and improve the bearing capacity, the surface hardness and other mechanical properties of the composite coating.
Owner:安徽工业大学科技园有限公司

Double-component epoxy adhesive for bonding ceramics, preparation method and using method thereof

The invention relates to a double-component epoxy adhesive for bonding ceramics, a preparation method and using method thereof, belonging to the adhesive field, and aiming at solving the technical problem that the interfacial stress is overhigh owning to great difference of linear expansion coefficients when the existing epoxy adhesive is used for bonding the ceramics. The component A of the double-component epoxy adhesive is prepared by E-44 epoxy resin, E-51 epoxy resin, carboxy terminal butadiene-acrylonitrile, ground quartz, carbon fiber, carbon nano tube, SiC crystal whisker and ultraviolet absorber UV-531, the component B of the double-component epoxy adhesive is prepared by 3-diethylin propylamine, silane coupling agent KH-550, accelerating agent DMP-30 and ground quartz, and the double-component epoxy adhesive is prepared by a mixing method. When the adhesive is used, the adhesive is coated on a surface to be adhered for superimposition and solidification; and the shearing strength of the adhesive can reach more than 60MPa when the adhesive is used for bonding SiC ceramic; the bonding interface is good, an obvious mechanical embedding function is realized between an adhesive layer and a parent metal, and the defects such as cracks, air holes and the like do not exist in the adhesive layer.
Owner:HARBIN INST OF TECH

Method for direct bonding two silicon wafers for minimising interfacial oxide and stresses at the bond interface, and an SOI structure

A semiconductor substrate (1) comprises first and second silicon wafers (2,3) directly bonded together with interfacial oxide and interfacial stresses minimised along a bond interface (5), which is defined by bond faces (7) of the first and second wafers (2,3). Interfacial oxide is minimised by selecting the first and second wafers (2,3) to be of relatively low oxygen content, well below the limit of solid solubility of oxygen in the wafers. In order to minimise interfacial stresses, the first and second wafers are selected to have respective different crystal plane orientations. The bond faces (7) of the first and second wafers (2,3) are polished and cleaned, and are subsequently dried in a nitrogen atmosphere. Immediately upon being dried, the bond faces (7) of the first and second wafers (2,3) are abutted together and the wafers (2,3) are subjected to a preliminary anneal at a temperature of at least 400° C. for a time period of a few hours. As soon as possible after the preliminary anneal, and preferably, within forty-eight hours of the preliminary anneal, the first and second wafers (2,3) are fusion bonded at a bond anneal temperature of approximately 1,150° C. for a time period of approximately three hours. The preliminary anneal may be omitted if fusion bonding at the bond anneal temperature is carried out within approximately six hours of the wafers (2,3) being abutted together. An SOI structure (50) may subsequently be prepared from the semiconductor structure (1) which forms a substrate layer (52) supported on a handle layer (55) with a buried insulating layer (57) between the substrate layer (52) and the handle layer (55).
Owner:ANALOG DEVICES INC

Method for preparing thermal expansion matching composite thermal barrier coating

The invention discloses a method for preparing a thermal expansion matching composite thermal barrier coating, and relates to the field of surface coatings. The composite thermal barrier coating consists of a thermal barrier coating material Zr1-x-yHfxREyO2-y/2 and a negative thermal expansion material Zr1-yREyW2-zMozO8-y/2, wherein x is more than or equal to 0.01 and less than or equal to 1; y is more than or equal to 0.01 and less than or equal to 0.05; z is more than or equal to 0.3 and less than or equal to 1; and RE is one or more of La, Ce, Pr, Nd, Pm, SM, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, Lu, Sc and Y. The method comprises the following steps of: 1) cutting a matrix alloy into a certain size; 2) according to the thermal expansion matching principle, matching thermal barrier coating nanopowder with negative thermal expansion material micropowder; 3) performing micro/nano composition reconstruction on two kinds of prepared powder; 4) performing laser radiation on reconstructed composite particles; and 5) filling the composite particles in a powder feeder, and preparing the thermal barrier coating through vacuum plasma spraying. The thermal barrier coating prepared has small interfacial stress, high bond strength, and good mechanical property. The method has simple process, is suitable for large-scale massive production, and can prepare the composite thermal barrier coating with firm interfacial bond.
Owner:JIANGSU UNIV

Method for representing bonding strength of hard film through interfacial stress of elasticoplastic deformation

ActiveCN104502273AChange the minimum loadChange peak load ratioUsing mechanical meansSpecial data processing applicationsShear stressAlloy substrate
The invention discloses a method for representing the bonding strength of a hard film through interfacial stress of elasticoplastic deformation. The method comprises the following steps: performing circulation pressing testing on a sample of which a metal or hard alloy substrate surface is deposited with the hard film by using a circulation pressing experiment machine, so as to cause elasticoplastic deformation of a film substrate system, and finally strip off the film from the substrate because of interface fatigue; performing finite element modeling analysis according to relevant material property and practical testing conditions, acquiring the shearing stress amplitude acting at the film base interface when the film is stripped off under different circulation loads according to the solving result, and finally quantitatively representing the bonding strength of the film/substrate interface according to shearing stress amplitude-stripping week curved. The method for representing the bonding strength of a film/substrate interface is relatively reasonable and feasible, relatively accurate and quantitative in representation, relatively practical and reliable in result, and applicable to representation and evaluation on the bonding strength of hard films on metal or hard alloy surfaces which are widely used in the conventional industrial fields.
Owner:宁波云涂科技有限公司

Semiconductor device and manufacture method

The invention relates to the field of circuits and discloses a semiconductor device and a manufacture method. The semiconductor device comprises a circuit device, a cooling fin and a thermal interface material layer located between the circuit device and the cooling fin, wherein the circuit device and the cooling fin are arranged in a laminating manner; a packaging layer surrounds the side wall of the circuit device; a first surface of the thermal interface material layer is in thermal coupling with the circuit device and the packaging layer, and a second surface is in thermal coupling with the cooling fin. In the scheme, the packaging layer and the circuit device are both in thermal coupling with the thermal interface material layer, so that the contact area of the circuit device with the thermal interface material layer is increased, heat produced on the side wall of the circuit device can be transferred to the thermal interface material layer through the packaging layer and then transferred to the cooling fin, and the cooling effect of the semiconductor device is improved. By means of the packaging layer surrounding the circuit device, the laying area of the thermal interface material layer is increased, the area of a contact surface of the thermal interface material layer is increased, the interfacial stress is reduced, and the component reliability is improved correspondingly.
Owner:HUAWEI TECH CO LTD

Cement concrete pavement waterproof structure with embedded seam of full-seam-opening hollow elastic tube

The invention discloses a cement concrete pavement waterproof structure with an embedded seam of a full-seam-opening hollow elastic tube, comprising a hollow elastic tube which is arranged in the embedded seam and can horizontally expand and contract along with the expansion and contraction of a pavement slab; the elastic tube is at least provided with an arch-shaped bulge upwards under the squeezing action of the pavement slab; the surface of the hollow elastic tube, over against the seam, is provided with an open seam of which the inside and outside are communicated; the pre-compressed magnitude of a hollow elastic waterproof part is large, so that the hollow elastic waterproof part can have relatively large extension and compression space, can adapt to deformation of a concrete slab for a long time, and especially can adapt to horizontal expansion and contraction deformation and vertical shear deformation; and when the width of a transverse seam changes with the temperature, because the compression degree of the hollow elastic waterproof part is suitable for expansion and contraction motion of the hollow elastic waterproof part, under the conditions of the expansion and contraction deformation and shear deformation of the transverse seam, by reducing the interfacial stress caused by the expansion and contraction deformation and shear deformation of the transverse seam, the joint between the transverse seam and the elastic waterproof part can not be damaged because of separation of the elastic waterproof part from the transverse seam.
Owner:CHONGQING JIAOTONG UNIVERSITY +1
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