Preparation method of high-performance doping strontium titanate oxide thermoelectric film

A technology of thermoelectric thin films and oxides, which is applied in the manufacture/processing of thermoelectric devices, and materials for the lead wires of thermoelectric devices, can solve the problems that restrict the practical application of thin film materials, and achieve the effect of high thermoelectric transmission performance

Active Publication Date: 2017-05-31
UNIV OF SCI & TECH BEIJING +1
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0005] However, it is undeniable that there are still the following problems in the field of thermoelectricity: 1) The power factors of existing thermoelectric materials with scales above microns are mostly lower than 100 μW/(cm K 2 ); 2) The thermoelectric effect utilizes the bulk effect in the practical application of the device, and the thickness of the supercrystalline and two-dimensional electron...

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  • Preparation method of high-performance doping strontium titanate oxide thermoelectric film
  • Preparation method of high-performance doping strontium titanate oxide thermoelectric film
  • Preparation method of high-performance doping strontium titanate oxide thermoelectric film

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Embodiment 1

[0031] In SrTiO 3 (001) substrate, using pulsed laser deposition method in 20 Pascal argon atmosphere, substrate temperature 1000 degrees Celsius to grow 1 micron SrNb 0.2 Ti 0.8 o 3 . During the growth process, the plasma temperature was controlled at 0.1eV, the average kinetic energy of ions was 11.5eV, the ionization rate was 10%, and the distance between the substrate and the target was 10 cm. X-ray two-dimensional reciprocal space imaging shows that the film and the substrate material have the same Qx component, which indicates that the grown film and the substrate have the same in-plane lattice parameters on the growth plane (see figure 1), so the compressive stress can be maintained; due to the effect of the stress field, the electrical conductivity and the Seebeck coefficient of the film material are significantly improved compared with the same composition and thickness of the film material in the stress-free state (see image 3 , Figure 4 ). The room temperatu...

Embodiment 2

[0033] In SrTiO 3 On the (001) substrate, use the pulsed laser deposition method to grow 1 micron SrTi under the oxygen atmosphere of 20 Pascals, and the substrate temperature is 1000 degrees Celsius. 0.4 Nb 0.6 TiO 3 . During the growth process, the plasma temperature was controlled at 0.2eV, the average kinetic energy of ions was 5eV, the ionization rate was 30%, and the distance between the substrate and the target was 3 cm. It can be seen from the transmission electron microscope photos at the interface that the grown film has the same in-plane lattice parameters as the substrate on the growth plane (see figure 2 ), so the compressive stress is maintained; due to the stress field, the electrical conductivity and Seebeck coefficient of the film material are significantly improved compared with the same composition and thickness of the film material in the unstressed state. Among them, the conductivity is increased by 2 times, and the Seebeck coefficient is increased by...

Embodiment 3

[0035] In SrTiO 3 (110) On the substrate, 100 nm La 0.1 Sr 0.9 TiO 3 . During the growth process, the plasma temperature was controlled at 0.5eV, the average kinetic energy of ions was 20eV, the ionization rate was 20%, and the distance between the substrate and the target was 2 cm. Through X-ray two-dimensional reciprocal space imaging, it can be seen that the film and the substrate material have the same Qx component, so the compressive stress can be maintained; For the same composition and thickness of the film material grown, the electrical conductivity is increased by 10 times, and the Seebeck coefficient is increased by 20 times.

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Abstract

The invention discloses a preparation method of a high-performance doping strontium titanate perovskite oxide thermoelectric film. The method is characterized in that epitaxial coherent growth of a doping strontium titanate film material on the surface of an oxide monocrystal substrate which has the same lattice body structure and an unmatched parameter compared with the film material is realized by controlling a plasma property and a substrate condition; and an interfacial stress field is generated. A crystal structure property, an electronic structure property and a polarization characteristic of the film material, and an interfacial property between the film material and the substrate are adjusted by the stress field and the lattice distortion degree of the film material, so that thermoelectric transmission properties of the material such as conductivity and a seebeck coefficient are greatly improved. A room-temperature thermoelectric power factor of the prepared doping strontium titanate film material is 50-10000mnW/(cm*K<2>). The high-performance doping strontium titanate film material prepared by the method can be further applied to design and preparation of a thermoelectric device, so that the thermal and electric energy conversion efficiency of the prepared thermoelectric device during realization of functions such as temperature difference power generation, refrigeration and temperature sensing can be greatly improved.

Description

technical field [0001] The invention belongs to the field of thermoelectric conversion materials and devices and the growth of thin film materials, and in particular relates to a method for preparing a high-performance doped strontium titanate perovskite oxide thermoelectric thin film. Background technique [0002] Thermoelectric materials and devices can realize mutual conversion of thermal energy and electrical energy under all solid-state conditions through the Seebeck effect and Peltier effect. In recent years, people's research interest in thermoelectric materials has mainly focused on the following two aspects: 1) the development of new thermoelectric compounds Continuous exploration of material systems [NPG Asia Mater., 2015, 7, e210, Adv. Mater., 2015, 27, 3639, Nature, 2014, 508, 373] and new synthesis methods [Nature Communications, 2014, 5, 4908]; 2 ) Improve the performance of existing thermoelectric materials by using scale and dimension effects through microstr...

Claims

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Application Information

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IPC IPC(8): H01L35/14H01L35/34
CPCH10N10/851H10N10/01
Inventor 陈吉堃陈立东史迅姜勇仇鹏飞张天松陈宏毅郝峰江彬彬李宇龙
Owner UNIV OF SCI & TECH BEIJING
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