Prepn of P-type zinc oxide film

A zinc oxide film, zinc oxide technology, applied in semiconductor/solid-state device manufacturing, electrical components, circuits, etc., can solve problems such as expensive equipment, no test results are given, and achieve low cost, wide application value, and stable performance. Effect

Inactive Publication Date: 2003-11-05
SHANDONG UNIV
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Problems solved by technology

In terms of co-doping, the work of M.Joseph is the most effective. They use the laser ablation (PLD) method to adopt the method of N and Ga co-doping to prepare the P-type ZnO thin film resistivity on th

Method used

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Experimental program
Comparison scheme
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Embodiment

[0015] Take 200g of ZnO powder with a purity of 99.99%, and a P with a purity of 99.999% 2 o 5 Powder 10g, Ga with a purity of 99.99% 2 o 3 0.4g of powder was mixed and ground to make a sintered target, the firing temperature was controlled at 600°C, sapphire was selected as the substrate material, and a phosphorus-gallium co-doped ZnO film was prepared on the sapphire substrate by magnetron sputtering; the preparation of the film The condition is that the partial pressures of the sputtering gases argon and oxygen are 1Pa and 5×10 -3 Pa, the sputtering power is 200W, the substrate temperature is 350°C; then the base pressure is 10 -4 Annealing in a vacuum of Pa, the heat source is three 36V low-pressure bromine tungsten lamp tubes, the annealing temperature is 800°C, and the annealing time is 40 minutes. The resistivity of the phosphorus-gallium co-doped ZnO film prepared under the above process is 0.37Ωcm, and the hole concentration is 1.6×10 18 cm -3 .

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Abstract

The present invention relates to the preparation of P-type zinc oxide film in semiconductor photoelectronic material and device field. By using sapphire or silicon as substrate material and sinteredZnO ceramic target with mixed P2O5 in 5 wt% and Ga2O3 in 0.2 wt% as source material and under proper sputtering gas pressures, sputtering power and higher substrate temperature, RF magnetically controlled sputtering process is adopted to prepare ZnO film with mixed P and Ga.Then, through annealing in vacuum at 800 deg.c and light irradiation for 40 min, P-type ZnO film is prepared. The preparation process of the present invention is simple, low in cost and high in product stability, and the film product has resistivity of 0.1 ohm. Cm and hole density of 10E18 each cu cm.

Description

(1) Technical field [0001] The invention relates to a method for preparing a P-type zinc oxide (ZnO) thin film, which belongs to the technical field of semiconductor optoelectronic materials and devices (2) Background technology [0002] ZnO material is similar to GaN in terms of lattice structure, lattice constant and bandgap width, and its Zn-O bond strength is greater than that of GaN and ZnSe, which is very important for suppressing the expansion of defects in the crystal. In addition, because ZnO has a strong exciton binding energy (60meV), it can achieve strong ultraviolet spontaneous and stimulated emission at room temperature, and ZnO is more suitable for making optoelectronic devices in the ultraviolet and ultraviolet bands. Therefore, ZnO is another important optoelectronic material after GaN, an important representative of the third-generation semiconductor material, and it is also a hot spot in international research. At present, the research on spontaneous emis...

Claims

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Application Information

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IPC IPC(8): H01L21/363
Inventor 张德恒孙征宗福建王卿璞张锡建
Owner SHANDONG UNIV
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