44 results about "Selenourea" patented technology

The method includes following steps: the cadmium oxide, cadmium carbonate, alkyl carboxylic acid, oleic acid, selenourea, thiourea are taken as raw material. Under the cover of oleic acid, or TOPO, or lauryl amine, or hexadecyl amine, or octadecyl amine, the alkyl carboxylic acid cadmium or the toluol solution of oleic acid cadmium reacts with aqueous solution of selenourea or thiourea at interface to form semiconductor nano-microparticles. Theses semiconductor nano-microparticles can implement wavelength tunable visible light under ultraviolet lamp.

A method of preparing a Ag2ZnSn(S,Se)4 compound, including dissolving selenourea (SeC(NH2)2) in an aprotic solvent, and dissolving a silver salt, a zinc salt, and a tin salt in the aprotic solvent with the selenourea to form a metal solution; and coating the metal solution onto a substrate to form an Ag2ZnSn(S,Se)4 compound layer on the substrate.

Gold(I)-carbene complexes having a selenium donor ligand with anti-cancer activity and a method of treating cancer. Methods of treating cancer comprising administering the complexes are also provided.

Methods are provided for controlling the shape of antimony selenide (Sb2Se3) synthesized nanostructures. The method dissolves an antimony (III) salt in a first amount of carboxylic acid, forming an antimony precursor. In one aspect, antimony (III) chloride is dissolved in oleic acid. Separately, selenourea is dissolved in oleylamine, forming a selenium precursor. The antimony precursor is combined with the selenium precursor to form a first solution and cause a reaction. The reaction is quenched with a solvent having a low boiling point. In response to quenching the reaction in the first solution, antimony selenide nanorods are formed, having a length in the range of 150-200 nanometers (nm) and a diameter in the range of 20 to 30 nm. Related methods can be used to create, shorter nanorods, nanocrystals, and hollow nanospheres.

The invention discloses a two-dimensional transition metal chalcogenide film and a preparation method thereof. The preparation method comprises the steps that A and B are mixed and then added into a C solution, and thus a precursor solution is obtained, wherein A is molybdenum pentachloride or tungsten tetrachloride, B is thiourea or selenourea, and C is isopropanol, or ethyl alcohol or methyl alcohol; the precursor solution is smeared on a silicon wafer with an oxidation layer; and a precursor placed on the surface of the silicon wafer is irradiated by a laser with the output power being 20-200 W for 0.02-2 s under the vacuum environment or the inert atmosphere environment, and thus the two-dimensional transition metal chalcogenide film is obtained. According to the preparation method, the two-dimensional transition metal chalcogenide film is prepared through a laser, the technological process is simple, the two-dimensional transition metal chalcogenide film with the high quality can be obtained in a short time, and the preparation method is suitable for large batch production of the two-dimensional transition metal chalcogenide films.