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PbSe quantum dot medium-long wave infrared photoelectric detector based on in-band transition, and manufacturing method thereof

A technology of electrical detectors and manufacturing methods, which is applied in the direction of circuits, electrical components, semiconductor devices, etc., can solve problems such as poor mechanical properties, low thermal conductivity, and limit the research progress of infrared detector devices, and achieve enhanced coupling between quantum dots , high carrier mobility, and easy external environment regulation

Pending Publication Date: 2021-09-21
JIANGSU UNIV
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, the shortcomings of IV-VI semiconductors (such as poor mechanical properties, low thermal conductivity, etc.) these factors limit the research progress of infrared detector devices based on this type of semiconductor

Method used

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  • PbSe quantum dot medium-long wave infrared photoelectric detector based on in-band transition, and manufacturing method thereof
  • PbSe quantum dot medium-long wave infrared photoelectric detector based on in-band transition, and manufacturing method thereof
  • PbSe quantum dot medium-long wave infrared photoelectric detector based on in-band transition, and manufacturing method thereof

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Embodiment Construction

[0028] The present invention will be further described below in conjunction with accompanying drawing.

[0029] 1. The synthesis process of PbSe colloidal quantum dots

[0030] (1) Preparation of experimental equipment

[0031] One 150mL three-hole flask, one 20mL measuring cylinder, one 50mL measuring tube, one condenser tube, one 50mL beaker and one 200mL beaker are used for the experiment. Clean them with detergent, dry them in an oven, take them out, and seal them with tin foil. Clean the magnets with detergent, dry them with nitrogen, and wrap them in tin foil for later use.

[0032] (2) Preparation of experimental drugs

[0033] The first step is the weighing of experimental medicines. Press the ON / OFF button of the electronic balance to turn on the display; after the display shows zero, fold the weighing paper diagonally and put it into the electronic balance, press the tare button, and start after the display shows zero. weighing. Use a key to take the PbO solid a...

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Abstract

The invention discloses a PbSe quantum dot medium-long wave infrared photoelectric detector based on in-band transition, and a manufacturing method thereof. PbSe nanometer colloid shows a good exciton structure, and energy exciton tuning ranges from 0.5 eV to 1 eV, which is a size function. When band-edge fluorescence is observed from 1.2 m to 24 m, the Stokes shift is small, and the sub-ns service life is close to the unified quantum yield. During 1.064 nm pumping, first exciton attenuation is consistent with radiation relaxation under low pumping intensity and Auger recombination under high pumping intensity. Optically induced absorption is observed at approximately the middle gap. Lead selenide (PbSe) quantum dots have the characteristics of wide infrared spectrum regulation and control range, high fluorescence quantum yield, solution processability and the like, and coating of a shell layer is one of strategies for effectively improving optical characteristics and chemical stability of the PbSe quantum dots and is a research direction for promoting application and development of the PbSe quantum dots. The PbSe core-shell quantum dots designed by the invention have very high application value in the fields of photoelectric detection, solar cells, lasers, photocatalysis and the like.

Description

technical field [0001] The invention relates to the technical field of semiconductor colloidal quantum dots, in particular to a PbSe quantum dot medium and long-wave infrared photodetector based on in-band transitions and a manufacturing method thereof. Background technique [0002] Compounds of the IV-VI group began to be paid attention to and studied in the 1930s, and were used in the military field. Until the 1950s, people began to study the basic physical properties of PbSe and PbTe. Among the group IV-VI compounds, the materials that have been studied more are PbSe, PbS and PbTe, etc., which are a kind of narrow bandgap semiconductors, and are mainly used in solar cell research and mid-infrared detector devices. The device has low cost, simple structure and high photoelectric conversion efficiency, and plays an important role in realizing the commercial application of photoconductive infrared detector electronic devices. However, the shortcomings of IV-VI semiconductor...

Claims

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Application Information

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IPC IPC(8): H01L31/113H01L31/0224H01L31/18
CPCH01L31/1136H01L31/022408H01L31/18Y02P70/50
Inventor 张海婷龙成贵季天辰侯化康宋效先
Owner JIANGSU UNIV
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