39results about How to "Excellent photosensitivity" patented technology

A transistor may include an active layer having a plurality of oxide semiconductor layers and an insulating layer disposed therebetween. The insulating layer may include a material that has higher etch selectivity with respect to at least one of the plurality of oxide semiconductor layers. The electronic device may include a first transistor and a second transistor connected to the first transistor. The second transistor may include an active layer having a different structure from that of the active layer included in the first transistor. The active layer of the second transistor may have the same structure as one of the plurality of oxide semiconductor layers constituting the active layer of the first transistor.

Disclosed are a novel sulfonic acid derivative compound and a novel naphthalic acid derivative compound with high solubility in organic solvents, good light sensitivity, and suitability as a photoacid generator and a polymerization initiator. The sulfonic acid derivative compound is represented by formula (I) (wherein R01, R04, R05 and R06 represent a hydrogen atom, one of R02 and R03 represent a carbon number 4-18 alkoxy group which may be substituted with an alicyclic hydrocarbon group, a heterocyclic group or a halogen atom and which may have a branch, and R07 is a carbon number 1-18 aliphatic hydrocarbon group which may be substituted by a halogen atom and/or an alkylthio group carbon atoms).

Disclosed is a photosensitive resin composition comprising a resin (A) soluble in an aqueous alkaline solution, a crosslinking agent (B), a photopolymerization initiator (C) and a curing agent (D) wherein the curing agent (D) is an epoxy compound obtained by glycidylating a compound containing not less than 80% of a tetraphenylethane derivative represented by the following formula (1).

In the formula, R₁ to R₈ independently represents a hydrogen atom, a C₁-C₄ alkyl group or a halogen atom.

The invention provides a method for preparing a lead selenide polycrystalline film on the basis of oxygen ion beam assisted deposition. In order to solve the problem of incapability of accurately controlling the oxygen doping amount and depth distribution in the PbSe film preparation process by physical vapor deposition-atmosphere annealing combination, oxygen ion assisted surface bombarding is performed by an ion beam assisted deposition technique in a static mixing mode after the film growth finishes, and the film is subjected to subsequent vacuum annealing to prepare the PbSe polycrystalline film with favorable and stable photosensitivity. The method can accurately control the oxygen ion injecting amount and depth distribution, and separates the oxygen doping from the polycrystallization process, thereby enhancing the degree of freedom of process optimization. The preliminary characterization of optical I-V characteristic, SEM (scanning electron microscope), XRD (X-ray diffraction) and the like on the prepared sample indicates that the PbSe polycrystalline prepared by the method has favorable photoelectric properties and surface characteristics.

The invention discloses a manufacturing method of a semiconductor process air bridge. The manufacturing method has the advantages that a sacrificial layer and back electrode patterns are manufacturing by LOR-series photoresist and AZ52-series photoresist, different types LOR photoresist and different photoresist smearing rotation speeds can be selected according to the different heights of steps, and single-layer and double-layer photoresist smearing can be used flexibly; due to the fact that the LOR-series photoresist is a non-photosensitive material and the AZ52-series photoresist is a photosensitive material, a line width structure is decided by the upper-layer AZ52-series photoresist, and the high-resolution and high-photosensitivity upper-layer AZ52-series photoresist can be applied to the high-step and small-line-width device structure.

A tri-methine optical record dye, its preparing process and its structure formula are disclosed. Its advantages are high photosensitivity, solubility, n and k values, purity and output rate.

The embodiment of the invention discloses a terminal display screen scanning method for optical fingerprint identification, which is used for improving the optical fingerprint identification performance. The method comprises the steps that if starting operation on a terminal screen is detected, a first vector set is obtained, the first vector set comprises A data vectors which are mutually orthogonal or mutually quasi-orthogonal, each data vector comprises a plurality of data elements, and A is an integer larger than 1;sequentially using the data elements in each data vector to control the minimum pixel unit in the fingerprint identification area to emit light, controlling light emission of all the minimum pixel units in the fingerprint identification area until light emission control of all the minimum pixel units in the fingerprint identification area is completed, so as to obtain a second vector set corresponding to the fingerprint identification area, and the second vector set carries fingerprint information; and demodulating the second vector set by using the first vector set to obtain all fingerprint information in the fingerprint identification area.

To provide, without using harmful substances, a photosensitive resin composition having a high resolution and sensitivity, and exhibiting excellent water, solvent and abrasion resistance, and adhesion to a screen mesh. [Solution] A photosensitive resin composition characterized by comprising the following components A, B, and C: component A being a polyvinyl alcohol and/or a partially saponified polyvinyl alcohol; component B being a water-soluble photoreactive cross-linking agent; and component C being a silane coupling agent. A stencil for screen printing using the aforementioned photosensitive resin composition.

An object of the present invention is to provide a transparent photosensitive material that is usable as an interlayer insulating film for metal wires, is excellent in migration resistance and substrate adhesiveness under high temperature and high humidity conditions, and is satisfactory in patternability. The photosensitive resin composition of the present invention contains an acrylic polymer (A1) having, in a side chain thereof, a polymerizable group, a cardo based resin (A2) having a polymerizable group and an alkali-soluble group, and a photopolymerization initiator (B), and contents of the acrylic polymer (A1) and the cardo based resin (A2) satisfy a weight ratio of 1:10 to 10:1.

Provided are a urethane acrylate and a reactive composition containing the urethane acrylate, in each of which such a problem that the handling properties of the reactive composition is deteriorated and such a problem that the cure shrinkage rate of the reactive composition is increased can be improved, and each of which enables the improvement of curing properties and surface hardness. A urethane acrylate produced from an alkyleneoxide-modified dipentaerythritol (meth)acrylate having a structure represented by general formula (I) and a structure represented by general formula (II) is used. In the formulae, the average value of L, which represents the average polymerization degree of an alkylene oxide (AO) added, is greater than 0 and up to 5; the average value of m is greater than 0 and up to 6; the average value of n is 0 or greater and smaller than 6; the average value of o is 0 to 6 inclusive; the sum total of m, n and o is 6; and R2 represents a hydrogen atom or a methyl group.

The invention relates to the field of synthesis of organic-inorganic hybridized color-change materials and particularly relates to a methylated imidazopyridazine iodoargentate photochromic material with quick response and multiple-color change on the basis of a dual mechanism, i.e., intermolecular electron transfer and photodecomposition of an inorganic constituent, i.e., iodoargentates, a preparation method for the photochromic material and an application of the photochromic material. A methylated imidazopyridazine iodoargentate hybrid has a chemical formula of {[C7H8N3]2[Ag5I7]}n, wherein [C7H8N3]<+> is a methylated imidazopyridazine cation, and [Ag5I7]n<n-> is a 1D anion chain. According to the photochromic material, the methylated imidazopyridazine iodoargentate photochromic material with quick response and wide-range color change is provided through taking an electron-deficient methylated imidazopyridazine cation as an electron acceptor and taking an iodoargentate anion skeleton with excellent photosensitive characteristic as an electron donor, and these electron donor-acceptor hybrids with semiconductor characteristics are endowed with new functions, i.e., quick response andmultiple-color change.

The invention discloses a manufacturing method of a back-lighting-type near-infrared pixel unit. The method comprises the following steps of S01, preparing a substrate, epitaxially generating a firstepitaxial layer on a surface of the substrate, and forming a first alignment mark on the surface of the first epitaxial layer; S02, epitaxially generating a second epitaxial layer on the surface of the first epitaxial layer, and forming a second alignment mark aligned with the first alignment mark on the surface of the second epitaxial layer; S03, repeating the step S02 till that an Nth epitaxiallayer and an Nth alignment mark are generated; S04, forming a front device on the surface of the Nth epitaxial layer; S05, inverting the substrate, and bonding the front device with slide glass; and S06, removing the substrate, and exposing the first epitaxial layer; and forming a back device on the surface of the exposed first epitaxial layer, wherein the back device is aligned with the front device through the first epitaxial layer, the second epitaxial layer until the Nth epitaxial layer. By using the back-lighting-type near-infrared pixel unit and the manufacturing method thereof, a thickness of the epitaxial layer of the back-lighting-type near-infrared pixel unit can be increased.

The invention discloses a diamine compound, resin, a photosensitive resin composition and a cured film, and relates to the technical field of photosensitive resin materials. The general formula of the diamine compound is as shown in formula (1), wherein R represents a straight bond,-O-or an organic group with 1-20 carbon atoms; r0 is an organic group comprising a sulfonic acid group, a sulfonyl group or a thioether group, and R1 represents H or alkyl with the carbon atom number of 1-3; r2 is H, alkyl with 1-20 carbon atoms or an organic group containing O, S, N and Si; i is an integer greater than or equal to 1. The diamine compound provided by the invention simultaneously contains cross-linking groups such as alkoxy or hydroxymethyl and functional groups such as sulfuryl or sulfonic acid group, and the diamine compound provided by the invention is introduced into photosensitive resin, so that the photosensitive resin is good in photosensitive property and excellent in mechanical and thermal properties.

The present invention relates to a method for producing an α-form titanylphthalocyanine represented by the formula (1):

which has a peak at a Bragg angle (2θ±0.2°) in X-ray diffraction spectrum with CuK α-ray: 7.5°, 10.2°, 12.6°, 13.2°, 15.1°, 16.3°, 17.3°, 18.3°, 22.5°, 24.2°, 25.3° and 28.6°, wherein the method includes steps of:

• • (I) subjecting a crude titanylphthalocyanine having an α-form polymorph to an acid pasting treatment, and then filtering and washing with water to give a water-containing wet cake, and then subjecting the wet cake to drying and crushing to give a low crystalline titanylphthalocyanine;
  • (II) adding a dispersing aid to the low crystalline titanylphthalocyanine and dispersing at room temperature, in DMF, to prepare a polymorph; and
  • (III) filtering, washing, and drying under a reduced pressure.

The present invention consists in a provision of a method for conveniently producing the α-form titanylphthalocyanine having a peak at a Bragg angle (2θ±0.2°) in X-ray diffraction spectrum with CuK α-ray: 7.5°, 10.2°, 12.6°, 13.2°, 15.1°, 16.3°, 17.3°, 18.3°, 22.5°, 24.2°, 25.3° and 28.6°, wherein a crude titanylphthalocyanine having an α-form polymorph is used as a starting material, as well as a provision of an electrophotographic photoreceptor comprising a charge generating material of the α-form titanylphthalocyanine which has excellent photosensitive characteristics.

[PROBLEMS] To provide a photosensitive resin composition which has excellent photosensitivity and gives a cured product reduced in warpage and excellent in flexing properties, adhesion, pencil hardness, solvent resistance, acid resistance, heat resistance, resistance to gold plating, etc.

[MEANS FOR SOLVING PROBLEMS] A urethane resin (A) soluble in aqueous alkali solutions and curable with active energy rays which is obtained by reacting a diisocyanate compound (a) with a tetrabasic acid dianhydride (b) to obtain a compound (E), reacting the compound (E) with a hydroxylated compound (c) having an unsaturated group and optionally with a hydroxylated compound (d) other than the compound (c) to obtain a compound (F), and further reacting hydroxy groups of the compound (F) with a diisocyanate compound (e).

The invention discloses a self-bias photoelectric detector and a preparation method and application thereof. The self-bias photoelectric detector comprises a substrate and a photoelectric structure fixed on the substrate, and the photoelectric structure comprises a photosensitive semiconductor layer, a blocking semiconductor layer and a counter electrode thin film layer. The photosensitive semiconductor layer is an n-type semiconductor material layer formed by cadmium sulfide; the barrier semiconductor layer is an n-type semiconductor material layer formed by titanium dioxide and/or metal-doped titanium dioxide. According to the self-bias photoelectric detector, cadmium sulfide is adopted as the photosensitive semiconductor layer, titanium dioxide and/or metal-doped titanium dioxide are/is adopted as the blocking semiconductor layer, the CdS layer has good photosensitive characteristics, and the CdS layer is matched with titanium dioxide to form a semiconductor junction, so that the leakage current can be reduced, and the photoelectric response effect can be improved. The self-bias photoelectric detector has the advantages of high reliability, low forward working voltage and high light extraction efficiency.

The invention relates to the technical field of household textiles, and discloses a bath towel capable of being kept dry easily. A backing material is made from polyester fibers, graphite fibers, bamboo fibers and modal fibers; loops are made from bamboo fibers, cotton fibers, milk fibers and down feathers; and the polyester fibers are pigment-modified polyester fibers which are prepared by the following processes: soaking the polyester fibers in a sodium hydroxide solution, washing the soaked polyester fibers by virtue of de-ionized water and drying the polyester fibers; adding a pigment mixture and lac to ethanol so as to prepare modifying liquid; and soaking the polyester fibers in the modifying liquid and conducting aeration-drying, and then keeping the polyester fibers at minus 10 DEG C for 10min and keeping the polyester fibers at 60 DEG C for 10min, wherein by processing the polyester fibers at the high temperature (60 DEG C) and the low temperature (minus 10 DEG C) alternately for 3-5 times, the pigment-modified polyester fibers are obtained. By virtue of pigment attached to the polyester fibers, light is absorbed and the light is converted into heat energy, so that evaporation of water on the surface of the bath towel is promoted, and the bath towel is dewatered and dried; in addition, growth of bacteria in the surface of the bath towel is inhibited; and meanwhile, the pigment cannot be eluted easily and can attach to the bath towel firmly, so that a lasting drying capacity of the bath towel is guaranteed.