34results about How to "Wide process margin" patented technology

An Static Random Access Memory (SRAM) device and a method of operating the same. In one embodiment, the SRAM device includes: (1) an SRAM array coupled to row peripheral circuitry by a word line and coupled to column peripheral circuitry by bit lines and (2) an array low voltage control circuitry that provides an enhanced low operating voltage VESS to the SRAM array during at least a portion of an active mode thereof.

An active element substrate and an opposed substrate sandwich a liquid crystal layer to constitute a liquid crystal display device. On the active element substrate, two signal lines respectively charge a pair of pixels that are adjacent to each other in a direction parallel to scanning lines. The two signal lines are provided intensively on a pixel electrode of one of the pair of pixels. In the direction parallel to the scanning lines, a pixel electrode on which signal lines are provided, and a pixel electrode on which signal lines are not provided, are arrayed alternately. This arrangement makes it possible to reduce, while ensuring a wide process margin, the fluctuation of the potential of a terminal to be connected to a pixel electrode (the fluctuation of the potential occurs during OFF-period of an active element due to capacitances respectively provided at superimposed portions of signal lines and a pixel electrode), to simplify the arrangement of signal lines, and to improve the aperture ratio.

A high-density plasma method is provided for forming a SiOXNY thin-film. The method provides a substrate and introduces a silicon (Si) precursor. A thin-film is deposited overlying the substrate, using a high density (HD) plasma-enhanced chemical vapor deposition (PECVD) process. As a result, a SiOXNY thin-film is formed, where (X+Y<2 and Y>0). The SiOXNY thin-film can be stoichiometric or non-stoichiometric. The SiOXNY thin-film can be graded, meaning the values of X and Y vary with the thickness of the SiOXNY thin-film. Further, the process enables the in-situ deposition of a SiOXNY thin-film multilayer structure, where the different layers may be stoichiometric, non-stoichiometric, graded, and combinations of the above-mentioned types of SiOXNY thin-films.

The present invention provides a positive photosensitive resin composition which can form a cured film excellent in process resistance such as heat resistance, solvent resistance or long-time baking resistance and transparency, and which is excellent in photosensitive properties such as resolution and sensitivity, and which has high storage stability and a wide process margin. Further, the present invention provides a positive photosensitive resin composition having such high reliability that no deterioration of electrical characteristics will be led in its application for liquid crystal display devices.A positive photosensitive resin composition characterized by comprising an alkali-soluble resin which is a copolymer essentially comprising an unsaturated carboxylic acid derivative and an N-substituted maleimide and which has a number average molecular weight of from 2,000 to 20,000, a 1,2-quinone diazide compound represented by the formula (1):(wherein each of D independently is a hydrogen atom or an organic group having a 1,2-quinone diazide group, R1 is a tetravalent organic group, provided that at least one of D is an organic group having a 1,2-quinone diazide group), and from 5 to 50 parts by weight, per the alkali-soluble resin, of a crosslinking compound represented by the formula (2):(wherein n is an integer of from 2 to 10, m is an integer of from 0 to 4, and R2 is a n-valent organic group).

An Static Random Access Memory (SRAM) device and a method of operating the same. In one embodiment, the SRAM device includes: (1) an SRAM array coupled to row peripheral circuitry by a word line and coupled to column peripheral circuitry by bit lines and (2) an array low voltage control circuitry that provides an enhanced low operating voltage VESS to the SRAM array during at least a portion of an active mode thereof.

Occurrence of a crosstalk phenomenon in a light-emitting device including a tandem element is suppressed. A light-emitting device includes: lower electrodes over an insulating layer; a partition over a portion between the lower electrodes, which includes an overhang portion over an end portion of each of the lower electrodes; a first light-emitting unit over each of the lower electrodes and the partition; an intermediate layer over the first light-emitting unit; a second light-emitting unit over the intermediate layer; and an upper electrode over the second light-emitting unit. The distance between the overhang portion and each of the lower electrodes is larger than the total thickness of the first light-emitting unit and the intermediate layer over the lower electrode.

An acrylic copolymer having a specific structure and a radiation-sensitive resin composition comprising the acrylic copolymer having high transparency to radiation, excelling in basic properties as a resist such as sensitivity, resolution, dry etching resistance, and pattern shape, and, in particular, excelling in forming contact holes and lines-and-spaces.

The invention discloses a flexible polyesterimide enameled wire insulating varnish. According to parts by weight, the formula is as follows: 40-50 parts of polyesterimide; 2-3 parts of phenolic resin (cresol type phenolic resin); 2-3 parts of phenolic resin 2 (p-tert-butylphenol type phenolic resin) 1~2 parts; silicone oil 0.01~0.02 parts; amino resin 0.5~2 parts; aromatic polyamide 1~3 parts; 50 servings. The enameled wire produced by the invention has good flexibility of the paint film, and after the enameled wire is extended by 25%, the paint film will not crack after being wound with 1 times the diameter of the conductor; the salt water pinhole property is good, and the enameled wire has no pinhole after the enameled wire is extended by 5%; the heat level can reach 200 levels.

A method for manufacturing an epitaxial wafer includes: a step of pulling a single crystal from a boron-doped silicon melt in a chamber based on a Czochralski process; and a step of forming an epitaxial layer on a surface of a silicon wafer sliced from the single crystal. The single crystal is allowed to grow while passed through a temperature region of 800 to 600° C. in the chamber in 250 to 180 minutes during the pulling step. The grown single crystal has an oxygen concentration of 10×1017 to 12×1017 atoms / cm3 and a resistivity of 0.03 to 0.01 Ωcm. The silicon wafer is subjected to pre-annealing prior to the step of forming the epitaxial layer on the surface of the silicon wafer, for 10 minutes to 4 hours at a predetermined temperature within a temperature region of 650 to 900° C. in an inert gas atmosphere. The method is to fabricate an epitaxial wafer that has a diameter of 300 mm or more, and that attains a high IG effect, and involves few epitaxial defects.

The invention discloses a synthetic method of a polyester type polyurethane enamelled wire varnish with a high heat-resistant grade, the enamelled wire varnish prepared by adopting the method has high heat-resistant performance and the heat-resistant grade reaches 200 or above. The synthetic method disclosed by the invention is characterized by comprising the synthetic processes of imine and ethanol amine modified polyester resin as follows: adding diethylene glycol, diethanol amine, trimethylol propane, tris-(2-hydroxyethyl) cyanuric acid and a catalyst into a reactor; heating the mixture to 100 to 120 DEG C; further adding dimethyl terephthalate, partial dianhydride and modified imine dicarboxylic acid; heating to 140 to 150 DEG C; reacting for more than 4 h; heating to 220 to 230 DEG C; reacting for more than 12 h; conducting vacuum operation when the temperature of a distillation head is below 65 DEG C until the viscosity is between 1300 to 1800 mPa.s (25 DEG C); adding cresol and xylene and stirring for dissolving and clarifying to obtain the imine and ethanol amine modified polyester resin until the solid content reaches 44%.

An interconnection structure, containing a substrate and, in the following order from a side of the substrate: (I) a semiconductor layer; (II) a multilayer structure including (II-a) a first layer containing at least one type of an element selected from the group consisting of nitrogen, carbon and fluorine and (II-b) an Al—Si diffusion layer containing Al and Si; and (III) an Al film of pure Al or an Al alloy, wherein the at least one of element selected from the group consisting of nitrogen, carbon, and fluorine in the first layer is bonded with Si contained in the semiconductor layer.

The invention discloses a graphene-flaky conductive mica oil tank static electricity conduction anticorrosive paint and a preparation method thereof. The paint uses epoxy resin as matrix resin, uses modified graphene and conductive mica as a two-component conductive filler, and adopts an isocyanate curing agent. The paint has the advantages of static electricity conduction, heat conduction, corrosion resistance and the like, the method is simple in technology, and the sources of the raw materials are wide. The preparation method of the graphene-flaky conductive mica oil tank static electricity conduction anticorrosive paint provided by the invention mainly comprises the following steps: synthesis of modified graphene, synthesis of isocyanate tripolymer and preparation of the oil tank static electricity conduction anticorrosive paint, wherein the graphene and the flaky conductive mica serve as the two-component conductive filler, the epoxy resin serves as the matrix resin, and an appropriate amount of a solvent is added, so that the graphene-flaky conductive mica oil tank static electricity conduction anticorrosive paint is obtained.

The invention relates to a preparation method of a high-heat-resistance and high-wear-resistance polyesterimide enameled wire insulating paint, which takes 100 parts of reacted polyesterimide enameled wire insulating paint by weight with medium molecular weight as a basal body. At least the following components in parts by weight are added: 1-20 parts of amino resin, 1-20 parts of thermoplastic phenolic resin and 0.5-5 parts of siloxane. Enameled wires which are made by using the paint has the advantages that the paint film adhesiveness is excellent, the stripping and twisting K value of the enameled wires can reach more than 155 and the K value is higher than the K value (which is 110) of the existing conventional products by more than two grades; the scratch resistance is excellent and the unidirectional scratch resistance can reach more than 2000g when the wire is combined with the polyesterimide paint; the heat resistance can reach 200 while the heat resistance of the conventional polyesterimide enameled wires is 180; and the process redundancy is wide and the realization of stable process production is facilitated.