Method for preparing lead selenide polycrystalline film on basis of oxygen ion beam assisted deposition

A technology of assisted deposition and oxygen ion beam, which is applied in the direction of chemical instruments and methods, ion implantation plating, polycrystalline material growth, etc., can solve the problems of CMOS process compatibility and limit the integration application of photosensitive arrays, and achieve the reduction of absorption defects, good Photoelectric properties and surface properties, effects of increased degrees of freedom

Active Publication Date: 2015-12-30
NORTHWESTERN POLYTECHNICAL UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The chemical deposition method is simple and easy, and the process is relatively mature, but it is not compatible with the CMOS process, which limits its application in the integration of photosensitive arrays

Method used

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  • Method for preparing lead selenide polycrystalline film on basis of oxygen ion beam assisted deposition
  • Method for preparing lead selenide polycrystalline film on basis of oxygen ion beam assisted deposition
  • Method for preparing lead selenide polycrystalline film on basis of oxygen ion beam assisted deposition

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0042] (1) The Si(100) substrate was ultrasonically cleaned for 15 min with absolute ethanol and acetone, and then washed with deionized water and dried for use. Si (100) substrate and PbSe powder (purity ≥ 99.99%) are respectively placed in the substrate frame 3 and the crucible 1 of the vacuum chamber, and the thermal evaporation system 6 is evacuated to 3 × 10 -4 Pa, and cover the substrate with a baffle. Increase the current of the heating source until the molecular beam evaporation rate reaches Reset the film thickness, remove the baffle, and start film growth with the substrate temperature stabilized at 120°C. When the thickness reaches 500nm, adjust the heating current to 0A and turn off the heating system to suspend the film growth. Start the ion source 5 to bombard the film with oxygen ions, the ion energy is 500eV, and the beam density is 100μA / cm 2 , the bombardment ends after 1 min. Use a baffle to block the film, and then increase the current of the heating s...

Embodiment 2

[0045] (1) The Si(100) substrate was ultrasonically cleaned for 15 min with absolute ethanol and acetone, and then washed with deionized water and dried for use. Si (100) substrate and PbSe powder (purity ≥ 99.99%) are respectively placed in the substrate frame 3 and the crucible 1 of the vacuum chamber, and the thermal evaporation system 6 is evacuated to 3 × 10 -4 Pa, and cover the substrate with a baffle. Increase the current of the heating source until the molecular beam evaporation rate reaches Reset the film thickness, remove the baffle, and start film growth with the substrate temperature stabilized at 120°C. When the film thickness reaches 1 μm, adjust the heating current to 0A and turn off the heating system to stop the film growth. Turn on the ion source 5, and the above-mentioned film is bombarded with oxygen ions, the ion energy is 500eV, and the beam current density is 100μA / cm 2 , the bombardment ends after 1 min.

[0046] (2) vacuum annealing is carried out...

Embodiment 3

[0048] (1) The Si(100) substrate was ultrasonically cleaned for 15 min with absolute ethanol and acetone, and then washed with deionized water and dried for use. Si (100) substrate and PbSe powder (purity ≥ 99.99%) are respectively placed in the substrate frame 3 and the crucible 1 of the vacuum chamber, and the thermal evaporation system 6 is evacuated to 3 × 10 -4 Pa, and cover the substrate with a baffle. Increase the current of the heating source until the molecular beam evaporation rate reaches Reset the film thickness, remove the baffle, and start film growth with the substrate temperature stabilized at 120°C. When the film thickness reaches 1 μm, adjust the heating current to 0A and turn off the heating system to stop the film growth. Turn on the ion source 5, and the above-mentioned film is bombarded with oxygen ions, the ion energy is 500eV, and the beam current density is 100μA / cm 2 , the bombardment ends after 1 min.

[0049] (2) The film obtained in the above ...

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Abstract

The invention provides a method for preparing a lead selenide polycrystalline film on the basis of oxygen ion beam assisted deposition. In order to solve the problem of incapability of accurately controlling the oxygen doping amount and depth distribution in the PbSe film preparation process by physical vapor deposition-atmosphere annealing combination, oxygen ion assisted surface bombarding is performed by an ion beam assisted deposition technique in a static mixing mode after the film growth finishes, and the film is subjected to subsequent vacuum annealing to prepare the PbSe polycrystalline film with favorable and stable photosensitivity. The method can accurately control the oxygen ion injecting amount and depth distribution, and separates the oxygen doping from the polycrystallization process, thereby enhancing the degree of freedom of process optimization. The preliminary characterization of optical I-V characteristic, SEM (scanning electron microscope), XRD (X-ray diffraction) and the like on the prepared sample indicates that the PbSe polycrystalline prepared by the method has favorable photoelectric properties and surface characteristics.

Description

technical field [0001] The invention belongs to the field of optoelectronic devices, relates to vacuum coating technology and infrared photoelectric detection technology, in particular to a method for preparing polycrystalline lead selenide thin film based on oxygen ion beam assisted deposition. Background technique [0002] Lead selenide (PbSe) is an important semiconductor material with a narrow bandgap (0.28eV). In recent years, uncooled mid-infrared detectors based on PbSe polycrystalline materials have attracted more and more attention. The detector can respond to mid-infrared radiation at room temperature, and has the advantages of fast response speed and high sensitivity. The detection device based on this technology can remove the refrigeration system and realize the miniaturization and portability design of the device. [0003] At present, the preparation of the material mainly adopts methods such as chemical synthesis and vapor deposition. The chemical deposition...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C30B28/12C30B29/46C23C14/06
Inventor 梅霆杨颢郑建邦陈磊刘旻张文定
Owner NORTHWESTERN POLYTECHNICAL UNIV
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