a ch-based 3 no 3 pbi 3 and al 2 o 3 Mos capacitive photosensitive device of material and preparation method thereof
A technology of photosensitive devices and capacitors, applied in semiconductor/solid-state device manufacturing, electric solid-state devices, electrical components, etc., can solve the development trend of low power consumption in the semiconductor industry, unfavorable miniaturization design of MOS devices, and dark state of MOS devices Large current and other problems, to achieve the effect of miniaturization design, excellent electrical characteristics, and reduce gate leakage current
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Embodiment 1
[0046] See figure 1 , figure 1 A CH-based 3 NH 3 PB 3 and Al 2 o 3 A schematic flow chart of the preparation method of the MOS capacitive photosensitive device of the material, including steps:
[0047] Al grows on the first side of the substrate 2 o 3 material to form a gate dielectric layer;
[0048] grow CH on the gate dielectric layer 3 NH 3 PB 3 material, forming the light absorbing layer;
[0049] growing a first electrode on the light absorbing layer;
[0050] A second electrode is grown on the second side of the substrate.
[0051] Specifically, see Figure 2a-Figure 2e , Figure 2a-Figure 2e A CH-based 3 NH 3 PB 3 and Al 2 o 3 The schematic diagram of the preparation method of the MOS capacitive photosensitive device of material, concrete steps are as follows:
[0052] S1, select the substrate 201; please refer to Figure 2a .
[0053] Specifically, the material of the substrate 201 is Si. Select a bulk silicon material; the bulk silicon materi...
Embodiment 2
[0081] See Figure 4 with Figure 5 , Figure 4 A CH-based 3 NH 3 PB 3 and Al 2 o 3 Schematic diagram of the structure of the MOS capacitive photosensitive device of the material, Figure 5 for Figure 4 Provided based on CH 3 NH 3 PB 3 and Al 2 o 3 Top view of the MOS capacitive photosensitive device of the material.
[0082] The MOS capacitive photosensitive device includes: a second electrode 205 , a substrate 201 , a gate dielectric layer 202 , a light absorption layer 203 and a first electrode 204 .
[0083] Wherein, the material of the second electrode 205 is Al, and the thickness is 150 nm.
[0084] The substrate 201 is located on the second electrode 205 . The material of the substrate 205 is Si, the crystal orientation of the Si material is , the size is 4 inches, the thickness is 400 μm, the resistivity is 0.0015Ωcm, and the doping type is n-type
[0085] The gate dielectric layer 202 is located on the substrate 201 . The material of the gate dielect...
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