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Method for preparing lead selenide film by using microwave plasma chemical vapor deposition technology

A technology of microwave plasma and chemical vapor deposition, which is applied in the field of infrared detection, can solve problems such as device manufacturing uncertainty, achieve high stability and repeatability, facilitate experimental operation and experimental control, and simplify processing steps.

Active Publication Date: 2020-12-01
CHONGQING INST OF GREEN & INTELLIGENT TECH CHINESE ACADEMY OF SCI +1
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  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the disagreement on the clarification of the sensitization mechanism has persisted for a long time, which may bring uncertainty to the fabrication of such devices

Method used

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  • Method for preparing lead selenide film by using microwave plasma chemical vapor deposition technology
  • Method for preparing lead selenide film by using microwave plasma chemical vapor deposition technology
  • Method for preparing lead selenide film by using microwave plasma chemical vapor deposition technology

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0030] Embodiment 1 prepares PbSe film

[0031] refer to figure 1 , is a schematic diagram of the self-made MPCVD system. The system consists of a household microwave oven (power set to 700w), a gas supply system, a quartz tube (outer diameter 25mm) and a vacuum pump. The gas supply system includes argon, a flow control valve and an inlet valve. .

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Abstract

The invention belongs to the technical field of infrared detection, and relates to a method for preparing a lead selenide film by using a microwave plasma chemical vapor deposition technology. The method comprises the following steps: (1) growing a lead selenide film on a substrate by adopting a thermal evaporation technology; and (2) treating the lead selenide film by adopting the microwave plasma chemical vapor deposition technology. The microwave plasma treatment technology does not cause selenium element loss, and does not change element composition or material properties of raw materials,the crystallization degree is improved only through the sintering phenomenon, and the photoelectric property is enhanced.

Description

technical field [0001] The invention belongs to the technical field of infrared detection, and relates to a method for preparing a lead selenide thin film by using a microwave plasma chemical vapor deposition method. Background technique [0002] Lead selenide (PbSe) is a typical narrow-band semiconductor material with an absorption range of 3-30um, which corresponds to the mid-to-far infrared absorption range, and is widely used in infrared detectors, solar cells, laser diodes and other fields. In recent years, lead selenide thin films have been widely used due to their narrow bandwidth (E F =0.278ev), high quantum efficiency, high photoelectric sensitivity, and good stability at room temperature, etc., which have attracted widespread attention. Generally, the composition and microstructure of PbSe thin films can be changed by changing the preparation method and corresponding parameters. At present, PbSe thin films have been successfully prepared by various chemical, elec...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/02C23C16/30C23C16/48
CPCH01L21/0256H01L21/0262C23C16/306C23C16/486
Inventor 于乐泳冯双龙魏兴战史浩飞
Owner CHONGQING INST OF GREEN & INTELLIGENT TECH CHINESE ACADEMY OF SCI
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