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Quantum dot photoelectric detector and preparation method thereof

A technology of photodetectors and quantum dots, applied in the field of light detection, can solve problems such as high cost, difficult preparation, and inapplicability, and achieve good stability

Inactive Publication Date: 2019-02-01
RESEARCH INSTITUTE OF TSINGHUA UNIVERSITY IN SHENZHEN
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Problems solved by technology

[0003] However, although the third-generation photodetectors made of mercury cadmium telluride, superlattice and quantum well also have excellent infrared photosensitive characteristics, their respective disadvantages are also obvious
On the one hand, the preparation of existing photodetectors is very dependent on large-scale high-vacuum equipment such as MBE and MOCVD, which is difficult to prepare and high in cost; on the other hand, some quantum dot materials (such as lead selenide PbSe) have poor stability. Lead selenide PbSe quantum dot material is very sensitive to air, making it unsuitable for photodetectors

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  • Quantum dot photoelectric detector and preparation method thereof

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Embodiment Construction

[0033] In the following description, a lot of specific details are set forth in order to fully understand the present invention, but the present invention can also be implemented in other ways different from those described here, and those skilled in the art can do it without departing from the meaning of the present invention. Similar applications, therefore, the present invention is not limited by the specific embodiments disclosed below.

[0034] The present invention provides a preparation method of quantum dot photodetector 10, such as figure 1 As shown, it is a schematic diagram of the preparation process of the quantum dot photodetector 10 according to an embodiment of the present invention, and the preparation method includes the following steps:

[0035] Step S11: preparing a precursor solution containing cadmium selenide colloidal quantum dots;

[0036] like figure 2 As shown, it is a schematic flow chart of the preparation process of the lead selenide colloidal q...

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Abstract

The invention discloses a preparation method for a quantum dot photoelectric detector, and the preparation method comprises the following steps: preparing a precursor solution containing a cadmium selenide colloidal quantum dot; preparing a lead selenide colloidal quantum dot solution based on the precursor solution; removing impurities in the lead selenide colloidal quantum dot solution and performing separation to obtain a lead selenide colloidal quantum dot material; providing a substrate, and setting a plurality of spaced electrodes on the surface of the substrate; placing the lead selenide colloidal quantum dot material on the surface of the substrate to form a quantum dot photosensitive layer and electrically connecting the photosensitive layer to the electrode. The invention also provides the quantum dot photoelectric detector.

Description

technical field [0001] The invention relates to the field of light detection, in particular to a quantum dot photodetector and a preparation method thereof. Background technique [0002] The function of the photodetector is to convert the optical signal into an electrical signal, which is equivalent to a converter of an energy signal, and its final output is an electrical signal. In addition to converting optical signals into electrical signals, general optoelectronic systems can also perform targeted processing on electrical signals according to different needs, store them and apply them in various fields. Infrared reconnaissance and air early warning in the military field are inseparable from photoelectric detectors. In the civilian field, the supporting technology behind fire alarms, weather forecasts, and forest fire prevention is infrared photodetectors. According to the different photoresponse ranges, infrared photodetectors can be divided into three categories: near...

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Application Information

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IPC IPC(8): H01L31/0352H01L31/18
CPCH01L31/035218H01L31/18Y02P70/50
Inventor 檀满林田勇张维丽符冬菊陈建军
Owner RESEARCH INSTITUTE OF TSINGHUA UNIVERSITY IN SHENZHEN
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