Preparation method of Ga doped ZnO nanowire catalyzed by Sn

A technology of nanowires and preparation steps, applied in the field of optoelectronic information functional materials, can solve problems such as complex process, and achieve the effects of ensuring luminescence performance, convenient preparation process and high yield

Inactive Publication Date: 2011-10-26
UNIV OF SCI & TECH BEIJING
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Most of the products synthesized by the current preparation method are nanorods ...

Method used

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  • Preparation method of Ga doped ZnO nanowire catalyzed by Sn
  • Preparation method of Ga doped ZnO nanowire catalyzed by Sn

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0015] Clean the alumina boat and dry it, put the Ga droplet in the alumina boat, then evenly mix ZnO powder and Sn powder (weight ratio 10:3) and spread it on the Ga source to cover it. Place the cleaned silicon wafer coated with a film facing down directly above the evaporation source, and the vertical distance between the silicon wafer and the evaporation source is about 6 mm. In order to prevent the silicon wafer from sliding on the alumina boat, Pt wire was used to fix it on the alumina boat. Push the alumina boat equipped with evaporation source and silicon wafer into the tube furnace smoothly, and then fill the tube furnace with argon gas at 200 ml / min for 5 min. At the gas flow outlet, place the vent tube in the water and allow the argon to escape through the water. Raise the temperature of the furnace to 910 °C, keep it warm for 10 min, and fill it with argon with a flow rate of 120 ml / min. Then the tube furnace was naturally cooled to room temperature. Depend on ...

Embodiment 2

[0017] Clean the alumina boat and dry it, put the Ga droplet in the alumina boat, then evenly mix ZnO powder and Sn powder (weight ratio 10:2) and spread it on the Ga source to cover it. Place the cleaned silicon wafer coated with a film facing down directly above the evaporation source, and the vertical distance between the silicon wafer and the evaporation source is about 5 mm. In order to prevent the silicon wafer from sliding on the alumina boat, Pt wire was used to fix it on the alumina boat. Push the alumina boat equipped with evaporation source and silicon wafer into the tube furnace smoothly, and then fill the tube furnace with argon gas at 200 ml / min for 10 min. At the gas flow outlet, place the vent tube in the water and allow the argon to escape through the water. Raise the temperature of the furnace to 920 °C, keep it warm for 13 min, and fill it with argon with a flow rate of 110 ml / min. Then the tube furnace was naturally cooled to room temperature. The sample...

Embodiment 3

[0019] Clean the alumina boat and dry it, put the Ga droplet in the alumina boat, then evenly mix ZnO powder and Sn powder (weight ratio 10:2.5) and spread it on the Ga source to cover it. Place the cleaned silicon wafer coated with a film facing down directly above the evaporation source, and the vertical distance between the silicon wafer and the evaporation source is about 5 mm. In order to prevent the silicon wafer from sliding on the alumina boat, Pt wire was used to fix it on the alumina boat. Push the alumina boat equipped with evaporation source and silicon wafer into the tube furnace smoothly, and then fill the tube furnace with argon gas at 300 ml / min for 5 min. At the gas flow outlet, place the vent tube in the water and allow the argon to escape through the water. Raise the temperature of the furnace to 880 °C, keep it warm for 15 min, and fill it with argon gas at a flow rate of 100 ml / min. Then the tube furnace was naturally cooled to room temperature. The sam...

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Abstract

The invention provides a preparation method of Ga doped ZnO nanowires catalyzed by Sn, belonging to the field of photoelectron information functional materials and relating to a preparation technology of doped ZnO nanowires. In the method, a large amount of Ga doped ZnO nanowires are obtained on a silicon wafer on which a gold film is plated by using a chemical vapor deposition method through catalysis of Sn, wherein the diameter of the nanowire is about 25-90nm, the length of the nanowire is 10-20mu m, doped content of Ga is 0.5-15at.%, and the content of Sn is 0.5-6at.%. According to the invention, the content of Sn is controlled, the luminescent property of the Ga doped ZnO nanowire is ensured while effectively improving the topography of ZnO, thereby enlarging the application range of original fields of ZnO; and because used airflow amount is small, the growth time is relatively short, thus the method has the advantages of low cost, high efficiency and no environmental pollution, and is simple to operate.

Description

technical field [0001] The invention belongs to the field of optoelectronic information functional materials, and relates to a preparation technology of doped ZnO nanometer material, in particular to a preparation method of Ga doped ZnO nanometer wire. Background technique [0002] Transparent conductive oxides (Transparent conductive oxides, TCOS) have become an important optoelectronic information functional material due to their low resistivity and high light transmittance. They are used in solar cells, liquid crystal displays, gas sensors, ultraviolet semiconductor lasers, optical waveguides , sensors and other fields have been widely used. Among such materials, ZnO is a wide bandgap (3.30 eV) n-type semiconductor material, which is prone to defects and doping. Compared with indium tin oxide (ITO) and SnO 2 As far as transparent conductive film is concerned, it has the advantages of low production cost, non-toxicity, cheap and easy to obtain, and high stability (especia...

Claims

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Application Information

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IPC IPC(8): C04B41/50C01G9/03B82Y40/00
Inventor 常永勤陆映东龙毅
Owner UNIV OF SCI & TECH BEIJING
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