The invention discloses an electro-deposition method for preparing the three
band gap Fe-doped with
copper gallium sulfur solar cell materials. The method includes the following steps: dissolving the
copper chloride, the
gallium chloride and the
ferric chloride in the
ionic liquid, depositing the Cu, Ga and Fe prefabricated
layers on the constant potential of the substrate, conducting the
vulcanization annealing treatment on the prefabricated
layers, and finally preparing the Fe-doped with
copper gallium sulfur thin film materials. The electro-deposition method for preparing the three
band gap Fe-doped with copper gallium
sulfur solar cell materials can effectively reduce the
adverse effect of the
hydrogen evolution reaction on the quality of the thin film due to the fact that the
ionic liquid is used as the
solvent, simple in preparation technology, high in
utilization rate of raw materials, low in production cost, strong in
controllability, good in
repeatability, capable of realizing the preparation of the large-area high-quality thin film and large-scale production, good in
crystallinity, compact and flat in surface
topography, and capable of broadening the absorption of the
solar energy spectral by the materials through the generated sub-
band gap and obviously increasing the photo-generated current of materials.