The invention discloses an electro-deposition method for preparing the three 
band gap Fe-doped with 
copper gallium sulfur solar cell materials. The method includes the following steps: dissolving the 
copper chloride, the 
gallium chloride and the 
ferric chloride in the 
ionic liquid, depositing the Cu, Ga and Fe prefabricated 
layers on the constant potential of the substrate, conducting the 
vulcanization annealing treatment on the prefabricated 
layers, and finally preparing the Fe-doped with 
copper gallium sulfur thin film materials. The electro-deposition method for preparing the three 
band gap Fe-doped with copper gallium 
sulfur solar cell materials can effectively reduce the 
adverse effect of the 
hydrogen evolution reaction on the quality of the thin film due to the fact that the 
ionic liquid is used as the 
solvent, simple in preparation technology, high in 
utilization rate of raw materials, low in production cost, strong in 
controllability, good in 
repeatability, capable of realizing the preparation of the large-area high-quality thin film and large-scale production, good in 
crystallinity, compact and flat in surface 
topography, and capable of broadening the absorption of the 
solar energy spectral by the materials through the generated sub-
band gap and obviously increasing the photo-generated current of materials.