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Bismuth vanadate photo-anode film and preparation method thereof

A bismuth vanadate, photoanode technology, applied in chemical instruments and methods, electrodes, vanadium compounds, etc., can solve the problems of slow charge separation/transportation, low charge mobility, poor oxidation kinetics, etc., and achieve good photoelectric catalytic performance. , the effect of high crystal quality and simple method

Inactive Publication Date: 2018-08-17
XUCHANG UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] The above-mentioned bismuth vanadate photoanode films are basically undoped or single-doped structures, and bismuth vanadate still has some disadvantages, such as slow charge separation / transport, low charge mobility, poor oxidation kinetics Wait

Method used

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  • Bismuth vanadate photo-anode film and preparation method thereof
  • Bismuth vanadate photo-anode film and preparation method thereof
  • Bismuth vanadate photo-anode film and preparation method thereof

Examples

Experimental program
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Effect test

Embodiment 1

[0045] Such as figure 1 As shown, a bismuth vanadate photoanode film, the film structure includes a light absorbing layer, the upper surface of the light absorbing layer is provided with an oxygen evolution catalyst layer, the lower surface of the light absorbing layer is provided with a substrate, the The light absorbing layer is a gradient molybdenum-doped bismuth vanadate thin film, the oxygen evolution catalyst layer is an iron-doped NiO ultra-thin nanosheet, and the substrate is FTO conductive glass. The gradient molybdenum-doped bismuth vanadate thin film is doped with high concentration molybdenum on the surface. The doping concentration of the gradient molybdenum-doped bismuth vanadate thin film is 5% molar ratio.

[0046] The preparation steps of undoped bismuth vanadate thin film are as follows:

[0047] 1) Sputter a bismuth thin film on a dry, clean FTO conductive glass substrate with a length and width of 1 cm × 2 cm using a high vacuum ion sputtering apparatus; ...

Embodiment 2

[0051] Similar to Example 1, a metal bismuth film was deposited by sputtering, and 50 microliters of vanadyl acetylacetonate and molybdenum diacetylacetonate oxide in a ratio of 19 / 1 were uniformly coated on the DMSO solution with a molar ratio of 0.5 mol / liter. , through the same drying, heat treatment, soaking, cleaning, drying and other processes as in Example 1, a uniform molybdenum-doped bismuth vanadate film was obtained. Its optical photo is attached figure 2 Medium No. 2 film. Figure 5 It is a uniform molybdenum-doped bismuth vanadate thin film, and all XRD diffraction peaks can be assigned to BiVO 4 phase with F-doped SnO 2 substrate. Figure 13 Example 2 is the performance curve of the photoanodized water prepared by this sample.

Embodiment 3

[0053] Gradient molybdenum-doped bismuth vanadate thin film preparation steps: On the undoped bismuth vanadate thin film obtained in Example 1, drop 50 microliters of vanadyl acetylacetonate and molybdenum diacetylacetonate with a ratio of 19 / 1. DMSO solution with a molar ratio of 0.5 mol / L; dried in an oven at 80-100°C and then placed in a muffle furnace at a rate of 2°C / min to first raise the temperature to 450°C and then to 500°C and keep the temperature at 500°C for 2 hours; After natural cooling, the obtained brown film is soaked in 1 mol / L NaOH solution for 20-30 minutes, washed with distilled water to remove impurity ions, and dried to obtain a gradient molybdenum-doped bismuth vanadate film. Its optical photo is attached figure 2 Medium No. 3 film.

[0054] Figure 6 For gradient molybdenum-doped bismuth vanadate thin films, all XRD diffraction peaks can be attributed to BiVO 4 phase with F-doped SnO 2 substrate. Figure 7 The sample characteristic Raman signals ...

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Abstract

The invention provides a high-performance bismuth vanadate photo-anode film and a preparation method thereof. The photo-anode film comprises a gradient molybdenum doped bismuth vanadate film light absorption layer and a Fe doped NiO ultra-thin section catalyst on the surface of the light absorption layer. The preparation method includes the steps: 1) depositing a bismuth film on an FTO conductingglass substrate; 2) reacting the bismuth film and vanadiumoxy acetylacetonate at the 450 DEG C to obtain an undoped bismuth vanadate film; 3) doping the bismuth vanadate film by the aid of the vanadiumoxy acetylacetonate and diacetylacetone diacetone oxide to obtain a gradient molybdenum doped bismuth vanadate film; 4) rotatably coating the molybdenum doped bismuth vanadate film with a Fe doped Ni(OH)2 ultra-thin section, and performing heat treatment to obtain the bismuth vanadate photo-anode film loaded the Fe doped NiO catalyst. The method is simple, convenient and environmentally friendly,and the prepared bismuth vanadate photo-anode film effectively facilitates electric charges to be separated and transmitted and has good visible light absorption performance and photoelectric water decomposition performance.

Description

technical field [0001] The invention relates to the technical field of manufacturing inorganic non-metallic materials, in particular to a bismuth vanadate photoanode film. Background technique [0002] The global energy crisis and environmental pollution are a great challenge to sustainable development. With the development of science and technology, the technology of using solar photoelectric water splitting to produce hydrogen is expected to become an important technical means to solve these problems. There are many materials that can be selected for photoelectric water splitting to produce hydrogen, such as common semiconductor metal oxides, nitrides or sulfides. Under the irradiation of visible light, semiconductors can excite and separate charges, and further undergo redox reactions to produce hydrogen. Bismuth vanadate (BiVO 4 ) as a good visible light responsive material, it has the advantages of non-toxicity, low cost, suitable band gap (2.4eV), stable properties,...

Claims

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Application Information

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IPC IPC(8): C01G31/00C01G53/04B01J23/887
CPCC25B1/04C01G31/00C01G53/04B01J23/8877C01P2004/03C01P2004/01C01P2002/82C01P2002/85C01P2002/84C01P2002/72C25B1/55C25B11/091B01J35/33Y02E60/36
Inventor 李磊杨中正谷龙艳李品将雷岩李知声王之俊郑直
Owner XUCHANG UNIV
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